Igniter
    3.
    发明授权
    Igniter 有权

    公开(公告)号:US10036618B2

    公开(公告)日:2018-07-31

    申请号:US15686071

    申请日:2017-08-24

    摘要: An igniter includes a first ignition charge, a first member which has a predetermined inner surface and a second member. The second member is arranged in a state of being inserted into the first member and which has a predetermined outer surface opposed to the predetermined inner surface in an arrangement state, for forming a predetermined space to arrange the first ignition charge between the predetermined inner surface and the predetermined outer surface. When the second member is rotated with respect to the first member, then the first ignition charge is ignited in the predetermined space by means of a predetermined pressure including a shear force generated between the predetermined outer surface and the predetermined inner surface in accordance with the rotation, and a combustion product of the first ignition charge is released from an opening of the predetermined space. Accordingly, preferable ignition of the ignition charge is realized.

    Silicided MOS capacitor explosive device initiator
    9.
    发明授权
    Silicided MOS capacitor explosive device initiator 有权
    硅化MOS电容器爆炸装置引发器

    公开(公告)号:US09261341B2

    公开(公告)日:2016-02-16

    申请号:US14333769

    申请日:2014-07-17

    申请人: WaferTech, LLC

    摘要: An explosive device using a semiconductor explosion initiator device provides an MOS capacitor formed on a semiconductor substrate and including a silicide layer formed over a doped silicon layer formed over an oxide layer. The oxide layer is formed on an N-well formed in a semiconductor substrate. A voltage source applies a voltage which may be a pulsed voltage, across the MOS capacitor sufficient to cause the avalanche breakdown of the oxide layer and the diffusion of metal from the silicide layer into the doped silicon of the N-well formed in the substrate. The chemical reaction between the metal and the doped silicon causes the generation of a plasma which ignites a pyrotechnic material or ignites or detonates other explosive material in contact with the semiconductor explosion initiator device.

    摘要翻译: 使用半导体爆炸引发装置的爆炸装置提供形成在半导体衬底上的MOS电容器,并且包括在氧化物层上形成的掺杂硅层上形成的硅化物层。 氧化物层形成在半导体衬底中形成的N阱上。 电压源施加跨过MOS电容器的足够的脉冲电压的电压,足以引起氧化物层的雪崩击穿和金属从硅化物层扩散到在衬底中形成的N阱的掺杂硅中。 金属和掺杂硅之间的化学反应导致产生点燃烟火材料的等离子体,或点燃或引爆与半导体爆炸引发装置接触的其它爆炸物质。