Method for manufacturing memory element
    71.
    发明授权
    Method for manufacturing memory element 有权
    存储元件制造方法

    公开(公告)号:US07829473B2

    公开(公告)日:2010-11-09

    申请号:US12050687

    申请日:2008-03-18

    申请人: Kensuke Yoshizumi

    发明人: Kensuke Yoshizumi

    IPC分类号: H01L21/469

    CPC分类号: H01L27/101 H01L27/1292

    摘要: A first conductive layer is formed, a composition layer over the first conductive layer is formed by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent, and the composition layer is dried. Subsequently, pretreatment is performed in which the organic material covering the nanoparticles, which are positioned on a surface of the composition layer, is decomposed, and then baking is performed. In this manner, a second conductive layer is formed by sintering nanoparticles which are positioned on a surface of the composition layer. A memory layer is formed between the first conductive layer and the second conductive layer using the nanoparticles covered with the organic materials to which the pretreatment is not performed.

    摘要翻译: 形成第一导电层,通过将其中包含被有机材料覆盖的导电材料的纳米颗粒分散在溶剂中的组合物排出,形成第一导电层上的组合物层,并将组合物层干燥。 随后,进行预处理,其中覆盖在组合物层表面上的纳米颗粒的有机材料被分解,然后进行烘烤。 以这种方式,通过烧结位于组合物层的表面上的纳米颗粒来形成第二导电层。 使用覆盖有未进行预处理的有机材料的纳米颗粒,在第一导电层和第二导电层之间形成存储层。