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71.发明授权Method of reducing water spotting and oxide growth on a semiconductor structure 失效减少半导体结构上的水斑和氧化物生长的系统公开(公告)号：US06601595B2
公开(公告)日：2003-08-05
申请号：US10231730
申请日：2002-08-28
Applicant: Donald L. Yates
Inventor： Donald L. Yates
IPC: B08B304
CPC classification number: H01L21/67034 , H01L21/02052 , H01L21/02057 , H01L21/67028 , H01L21/67057 , Y10S134/902
Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
Abstract translation: 本发明涉及一种在改进的常规气体蚀刻/漂洗或干燥容器中清洗和干燥半导体结构的方法。
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