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公开(公告)号:US4675710A
公开(公告)日:1987-06-23
申请号:US361543
申请日:1982-03-24
申请人: Hiroshi Ishikawa , Nobuyuki Takagi , Hajime Imai
发明人: Hiroshi Ishikawa , Nobuyuki Takagi , Hajime Imai
CPC分类号: H01S5/24 , H01L33/0062 , H01L33/16 , H01L33/24 , H01S5/2201 , H01S5/2237 , H01S5/32391
摘要: An InGaAsP/InP light emitting semiconductor device which includes an active layer buried in a groove. A (111) B facet of the InP crystal, which is an inclined side plane of the groove, is exposed. The side edges of the InGaAsP active layer reach to the (111) B facet.
摘要翻译: 一种InGaAsP / InP发光半导体器件,其包括埋在沟槽中的有源层。 作为凹槽的倾斜侧面的InP晶体的(111)B面被露出。 InGaAsP活性层的侧边缘到达(111)B面。