摘要:
An InGaAsP/InP light emitting semiconductor device which includes an active layer buried in a groove. A (111) B facet of the InP crystal, which is an inclined side plane of the groove, is exposed. The side edges of the InGaAsP active layer reach to the (111) B facet.
摘要:
A matrix type display device including: a photosensor, provided in a display region, for outputting a signal corresponding to an intensity of light emitted to the photosensor; a TFT of n-channel type, the TFT serving as a source follower including a gate to which the signal is inputted; and light intensity detecting means for detecting the intensity of the light by detecting an output of the source follower, which is the TFT. In at least one embodiment, the TFT includes a drain to which a first pulse signal (Vpulse2) having a first pulse is inputted, the first pulse rising from a low level to a high level in a state where the signal is inputted to the gate of the TFT.
摘要:
The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.
摘要:
A display device according to the present invention includes: a plurality of pixels arranged in matrix; photoelectric elements being provided in each of the pixels and each outputting a signal with a value according to the quantity of light received by the photoelectric element, the photoelectric elements forming photoelectric element groups (PDs(n)) in each of which the photoelectric elements arranged along a one-dimensional direction are grouped; and resetting wirings (Vrts(n+1)), each of which is connected to the anode side electrodes of the photoelectric elements in the corresponding one (PDs(n)) of the photoelectric element groups commonly, and is shared by an adjacent one (PDs(n+1)) of the photoelectric element groups. This configuration makes it possible to provide such a display device having a pixel including an optical sensor incorporated therein, that is not affected by the resolution and the performance of an output AMP and is capable of preventing a decrease in the aperture ratio of the pixel.
摘要:
A display device according to the present invention includes a liquid crystal display panel in which a plurality of pixels are arranged in matrix, and an optical sensor circuit configured by a photodiode (17), a NetA voltage-boosting capacitor, and an output AMP. A driving wiring (Vrwn) for supplying a driving signal to the NetA voltage-boosting capacitor is electrically connected to a power supply wiring (Vsm) for supplying power to the output AMP. This configuration reduces parasitic capacitance resulting from an increase in the number of wirings. This makes it possible to make a display device having a pixel including an optical sensor incorporated therein, the display device capable of avoiding deterioration in sensor accuracy in the optical sensor circuit and preventing a decrease in the aperture ratio of the pixel.
摘要:
A matrix type display device including: a photosensor, provided in a display region, for outputting a signal corresponding to an intensity of light emitted to the photosensor; a TFT of n-channel type, the TFT serving as a source follower including a gate to which the signal is inputted; and light intensity detecting means for detecting the intensity of the light by detecting an output of the source follower, which is the TFT. In at least one embodiment, the TFT includes a drain to which a first pulse signal (Vpulse2) having a first pulse is inputted, the first pulse rising from a low level to a high level in a state where the signal is inputted to the gate of the TFT.
摘要:
In at least one embodiment, a TFT includes: a first capacitor formed of a first capacitor electrode connected to a source electrode and a second capacitor electrode; a second capacitor formed of a third capacitor electrode and a fourth capacitor electrode; a first lead-out line; a second lead-out line connected to a gate electrode; a third lead-out line; a fourth lead-out line; a first interconnection; and a second interconnection. This realizes a TFT which can be easily saved from being a defective product even if leakage occurs in a capacitor connected to a TFT body section.
摘要:
A liquid crystal display device according to the present invention includes a vertical alignment type liquid crystal layer 32. Each pixel electrode thereof 12 has a plurality of unit electrode portions 12a, each of which has a conductive film and slits 13 that have been cut through the conductive film. When a predetermined voltage is applied between the pixel electrode and a counter electrode, a liquid crystal domain is produced in association with each unit electrode portion and liquid crystal molecules in the liquid crystal domain come to have a substantially radially tilting alignment state. As a result, the device of the present invention achieves a wide viewing angle and a fast response characteristic.
摘要:
A transflective-type liquid crystal display device with a high image quality which has a high aperture ratio and an excellent efficiency of utility of reflected light is provided at low cost. A liquid crystal display device according to the present invention is a liquid crystal display device having a transistor and a reflection section in each of a plurality of pixels; the reflection section includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer; a plurality of recesses are formed on the surface of the reflective layer; a storage capacitor is formed between at least a portion of the metal layer and at least a portion of the reflective layer; and at least one of the metal layer and the reflective layer includes two portions which are electrically isolated from each other.
摘要:
An protective film and a resin layer are stacked on an insulation substrate on which a TFT is formed, and after a contact hole is formed in the resin layer, the protective film below the contact hole is etched and removed. A pixel display electrode is allowed to contact a drain electrode at the area of the contact hole; thus, a liquid crystal display is formed. A cut-out section, which communicates with the lower layer is formed in the drain electrode in the area of the contact hole. Upon forming a TFT section island-shape semiconductor layer so as to provide a TFT, a hole section island-shape semiconductor layer is also formed in the area of the contact hole. With this arrangement, it is possible to provide a manufacturing method of a liquid crystal display which can avoid the occurrence of a step discontinuity in the pixel display electrode and the subsequent disconnection in the pixel display electrode.