公开(公告)号：US11581304B2

公开(公告)日：2023-02-14

申请号：US16987066

申请日：2020-08-06

Applicant: STMicroelectronics (Tours) SAS

Inventor： Olivier Ory

IPC: H01L27/02 ,  H01L29/06

Abstract: The present disclosure provides an electronic device that includes a substrate. The substrate includes a well and a peripheral insulating wall laterally surrounding the well. At least one lateral bipolar transistor is formed in the well, and the at least one transistor has a base region extending under parallel collector and emitter regions. The peripheral insulating wall is widened in a first direction, parallel to the collector and emitter regions, so that the base region penetrates into the peripheral insulating wall.

公开(公告)号：US20230021534A1

公开(公告)日：2023-01-26

申请号：US17858797

申请日：2022-07-06

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Olivier ORY ,  Philippe RABIER

IPC: H01L21/84 ,  H01L21/768 ,  H01L21/762 ,  H01L23/528 ,  H01L21/304 ,  H01L21/66

Abstract: The present description concerns an electronic die manufacturing method comprising: a) the deposition of an electrically-insulating resin layer on the side of a first surface of a semiconductor substrate, inside and on top of which have been previously formed a plurality of integrated circuits, the semiconductor substrate supporting on a second surface, opposite to the first surface, contacting pads; and b) the forming, on the side of the second surface of the semiconductor substrate, of first trenches, electrically separating the integrated circuits from one another, the first trenches vertically extending in the semiconductor substrate and emerging into or on top of the resin layer.

公开(公告)号：US11437365B2

公开(公告)日：2022-09-06

申请号：US16834329

申请日：2020-03-30

Applicant: STMicroelectronics (Tours) SAS

Inventor： Eric Laconde ,  Olivier Ory

IPC: H01L27/02 ,  H01L29/866 ,  H01L29/87

Abstract: A semiconductor substrate of a first conductivity type is coated with a semiconductor layer of a second conductivity type. A buried region of the second conductivity type is formed an interface between the semiconductor substrate and the semiconductor layer. First and second wells of the first conductivity type are provided in the semiconductor layer. A second region of the second conductivity type is formed in the first well. A third region of the second conductivity type is formed in the second well. The first well, the semiconducting layer, the second well and the third region form a first lateral thyristor. The second well, the semiconductor layer, the first well and the second region form a second lateral thyristor. The buried region and semiconductor substrate form a zener diode which sets the trigger voltage for the lateral thyristors.

公开(公告)号：US20220238507A1

公开(公告)日：2022-07-28

申请号：US17717501

申请日：2022-04-11

Applicant: STMicroelectronics (Tours) SAS

Inventor： Patrick POVEDA

IPC: H01L27/02 ,  H01L29/87 ,  H01L29/66 ,  H01L23/60 ,  H01L29/78 ,  H01L29/788 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06 ,  H01L29/06 ,  H01L29/866 ,  H02H9/04 ,  H03H11/04

Abstract: A protection device includes a first inductive element connecting first and second terminals and a second inductive element connecting third and fourth terminals. A first component includes a first avalanche diode connected in parallel with a first diode string, anodes of the first avalanche diode and a last diode in the string being connected to ground, cathodes of the first avalanche diode and a first diode in the string being connected, and a tap of the first diode string being connected to the first terminal. A second protection component includes a second avalanche diode connected in parallel with a second diode string, anodes of the second avalanche diode and a last diode in the string being connected to ground, cathodes of the second avalanche diode and a first diode in the string being connected, and a tap of the second diode string being connected to the third terminal.

公开(公告)号：US11367913B2

公开(公告)日：2022-06-21

申请号：US16270282

申请日：2019-02-07

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Ludovic Fallourd

IPC: H01M50/116 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0585 ,  H01M50/10 ,  H01M50/124 ,  H01M50/209 ,  H01M10/052

Abstract: The disclosure concerns a battery assembly including two batteries having their active layers facing each other and sharing an encapsulation layer.

公开(公告)号：US20210367628A1

公开(公告)日：2021-11-25

申请号：US17321757

申请日：2021-05-17

Applicant: STMicroelectronics (Tours) SAS

Inventor： Jean Pierre PROOT ,  Pascal PAILLET ,  Francois DUPONT

IPC: H04B1/04 ,  H04B1/18 ,  H03H7/38

Abstract: A circuit device includes a directional coupler with a first port receiving a radiofrequency signal, a second port outputting a signal in response to signal received by the first port, and a third port outputting a signal in response to a reflection of the signal at the second port. An impedance matching network is connected between the second port and an antenna. The impedance matching network includes fixed inductive and capacitive components and a single variable inductive or capacitive component. A diode coupled to the third port of the coupler generates a voltage at a measurement terminal which is processed in order to select and set the inductance or capacitance value of the variable inductive or capacitive component.

公开(公告)号：US20210217746A1

公开(公告)日：2021-07-15

申请号：US17143703

申请日：2021-01-07

Applicant: STMicroelectronics (Tours) SAS

Inventor： Aurelie ARNAUD ,  Severine LEBRETTE

IPC: H01L27/02 ,  H01L21/22 ,  H01L29/66 ,  H01L29/866

Abstract: ESD protection devices and methods are provided. In at least one embodiment, a device includes a first stack that forms a Zener diode. The first stack includes a substrate of a first conductivity type having a first region of a second conductivity type located therein. The first area is flush with a surface of the substrate. A second stack forms a diode and is located on and in contact with the surface of the substrate. The second stack includes a first layer of the second conductivity type having a second region of the first conductivity type located therein. The second area is flush, opposite the first stack, with the surface of the first layer. A third stack includes at least a second layer made of an oxygen-doped material, on and in contact with the second stack.

公开(公告)号：US11038209B2

公开(公告)日：2021-06-15

申请号：US16268210

申请日：2019-02-05

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Franck Ferreira Gomes ,  Delphine Guy-Bouyssou

IPC: H01M10/00 ,  H01M10/0585 ,  H01M10/0562 ,  H01M4/525 ,  H01M4/38 ,  H01M4/46 ,  H01M4/66 ,  H01M10/44 ,  H01M10/04 ,  H01M50/116 ,  H01M6/40

Abstract: The disclosure concerns a lithium battery comprising, in order, a support, a copper electrode and, in contact with the copper electrode, a layer of a material capable of forming an alloy with lithium. The disclosure further concerns a manufacturing method and a method of putting into service such a battery.

公开(公告)号：US20210098444A1

公开(公告)日：2021-04-01

申请号：US17028732

申请日：2020-09-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed BOUFNICHEL

IPC: H01L27/02 ,  H01L29/06 ,  H01L21/762

Abstract: Methods and devices for protecting against electrical discharges are provided. One such device for protecting against electrical discharges includes a semiconductor substrate and an isolation trench in the semiconductor substrate. The isolation trench includes an enclosed space that contains a gas.

公开(公告)号：US10811906B2

公开(公告)日：2020-10-20

申请号：US15925356

申请日：2018-03-19

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Jean Pierre Proot ,  Pascal Paillet

IPC: H02J50/12 ,  H02J50/80 ,  H04B5/00 ,  H02J50/70 ,  H02J7/02 ,  H02M7/48

Abstract: A resonant circuit can be used in recharging a battery. The resonant circuit includes an inductor, a first capacitor in series with the inductor, and a second capacitor in parallel with the inductor. Upon entering the field of a charging terminal a controller connected to the resonant circuit continually measures loss in the inductor and voltage on a terminal of the resonant circuit. If both are below respective predetermined thresholds, the controller decreases the capacitance of the first capacitor and increases the capacitance of the second capacitor, thereby increasing voltage from the resonant circuit to the battery.