公开(公告)号：US20100122547A1

公开(公告)日：2010-05-20

申请号：US12488634

申请日：2009-06-22

Applicant: Seung Do Han ,  Ho Youn Lee ,  Young Jin Kim ,  Tae Hee Lee ,  Sung Yong Shin

Inventor： Seung Do Han ,  Ho Youn Lee ,  Young Jin Kim ,  Tae Hee Lee ,  Sung Yong Shin

IPC: F25C1/00 ,  B67D5/08 ,  B67D5/62 ,  G05B15/00

CPC classification number: F25C5/22 ,  F25C2500/08 ,  F25C2600/02 ,  F25C2600/04

Abstract: An ice-making device includes a duct through which ice is dispensed and a duct-covering part opening and closing the duct. A sensor part senses whether the duct-covering part closes the duct and a control part controls the duct-covering part to open the duct when the sensor part senses that the duct-covering part fails to close the duct and the duct-covering part has been attempting to close the duct for at least a preset period of time.

Abstract translation: 制冰装置包括分配冰的管道和打开和关闭管道的管道覆盖部分。 传感器部分检测管道覆盖部分是否关闭管道，并且当传感器部件检测到管道覆盖部分不能关闭管道并且管道覆盖部分具有管道覆盖部分时，控制部分控制管道覆盖部分打开管道 一直尝试关闭管道至少一段预设的时间。

公开(公告)号：US07707672B2

公开(公告)日：2010-05-04

申请号：US11694800

申请日：2007-03-30

Applicant: Hyun-Seok Seo ,  Tae-Hee Lee ,  Ryung-Keol Choi ,  Sang-Wook Hong

Inventor： Hyun-Seok Seo ,  Tae-Hee Lee ,  Ryung-Keol Choi ,  Sang-Wook Hong

IPC: D06F33/02

CPC classification number: D06F35/007 ,  D06F37/203 ,  Y02B40/56

Abstract: Disclosed are a method for controlling a driving of a drum type washing machine preventing vibration and noise of a drum, reducing a usage of washing water, and reducing rinse time, and an apparatus thereof. To this end, the drum is rotated with a preset equilibrium speed faster than a speed that vibration of the drum is excessively generated accordingly as a rotation speed of the drum is decreased when a dewatering process of laundry is completed, and washing water is supplied into the drum type washing machine while maintaining the drum as the preset equilibrium speed.

Abstract translation: 公开了一种用于控制滚筒式洗衣机的驱动方法，该滚筒式洗衣机防止滚筒的振动和噪音，减少洗涤水的使用并减少冲洗时间，以及其装置。 为此，滚筒以预设的平衡速度旋转，速度比当滚筒的振动过度产生的速度相应地随着滚筒的旋转速度降低，当洗衣的脱水过程完成时，滚筒的旋转速度被过度地产生，并且将洗涤水供应到 滚筒式洗衣机将滚筒保持为预设平衡速度。

公开(公告)号：US20100102351A1

公开(公告)日：2010-04-29

申请号：US12646150

申请日：2009-12-23

Applicant: Chang Tae Kim ,  Tae Hee Lee ,  Hyun Min Jung ,  Gi Yeon Nam

Inventor： Chang Tae Kim ,  Tae Hee Lee ,  Hyun Min Jung ,  Gi Yeon Nam

IPC: H01L33/00 ,  H01L21/302

CPC classification number: H01L33/22 ,  H01L33/007

Abstract: The present disclosure relates to a semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a III-nitride semiconductor light-emitting device which improves external quantum efficiency by forming an irregular portion on a surface of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.

Abstract translation: 本发明涉及一种半导体发光器件及其制造方法，更具体地说，涉及通过在半导体层的表面上形成不规则部分来提高外部量子效率的III族氮化物半导体发光器件 通过形成在基板上的突起及其制造方法。

公开(公告)号：US20100040805A1

公开(公告)日：2010-02-18

申请号：US12282945

申请日：2007-03-13

Applicant: Kwang Suck Suh ,  Jong Eun Kim ,  Tae Young Kim ,  Won Jung Kim ,  Tae Hee Lee

Inventor： Kwang Suck Suh ,  Jong Eun Kim ,  Tae Young Kim ,  Won Jung Kim ,  Tae Hee Lee

IPC: C09K19/00 ,  H01B1/12

CPC classification number: C09D5/24 ,  C09K3/16 ,  Y02P20/582 ,  Y10T428/1055

Abstract: Disclosed is a conductive polymer composition for a polarizer film to impart the surface of the polarizer film for liquid crystal displays with antistatic performance. The composition is applied on the surface of the polarizer film without additional surface treatment and is then dried, thereby manufacturing a highly reliable antistatic polarizer film, which has high adhesive strength between the polarizer film and the adhesive layer and also results in no transfer of the adhesive layer of the polarizer film to a glass or transparent polymer substrate when the polarizer film is attached to the substrate and then separated therefrom.

Abstract translation: 公开了一种用于偏振膜的导电聚合物组合物，用于赋予具有抗静电性能的液晶显示器用偏振片的表面。 将组合物涂覆在偏光膜的表面上，无需额外的表面处理，然后干燥，从而制造高可靠性的抗偏振膜，其在偏光膜和粘合剂层之间具有高粘合强度，并且也不导致 当将偏光膜附着到基底上然后与偏光膜分离时，偏光膜的粘合剂层与玻璃或透明聚合物基底相接触。

公开(公告)号：US20100038719A1

公开(公告)日：2010-02-18

申请号：US12461131

申请日：2009-07-31

Applicant: Won-Joo Kim ,  Tae-hee Lee ,  Yoon-dong Park ,  Sang-moo Choi ,  Dae-kll Cha

Inventor： Won-Joo Kim ,  Tae-hee Lee ,  Yoon-dong Park ,  Sang-moo Choi ,  Dae-kll Cha

IPC: H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/0688 ,  H01L27/108 ,  H01L27/10882

Abstract: Disclosed are semiconductor apparatuses and methods of fabricating the same. According to the methods, the number of operations for fabricating the semiconductor apparatuses having a plurality of layers may be the same as the number of operations for fabricating a semiconductor apparatus having one layer. The semiconductor apparatuses may include first active regions extending in the same direction, in parallel, separated from each other and including first and second impurity doped regions on opposite ends of the first active regions from each other. The semiconductor apparatuses may further include second active regions on a layer above the first active regions, extending in the same direction as the first active regions, separated from each other, in parallel, and including first and second impurity doped regions on opposite ends of the second active regions from each other.

Abstract translation: 公开半导体装置及其制造方法。 根据该方法，用于制造具有多个层的半导体装置的操作次数可以与制造具有一层的半导体装置的操作次数相同。 半导体装置可以包括在相同方向上并联延伸的第一有源区，彼此分离，并且包括彼此在第一有源区的相对端上的第一和第二杂质掺杂区。 半导体装置还可以包括在第一有源区上方的层上的与第一有源区相同方向的第二有源区，该第一有源区平行彼此分开，并且包括第一和第二杂质掺杂区， 第二活跃区域。

公开(公告)号：US20100018226A1

公开(公告)日：2010-01-28

申请号：US12521051

申请日：2007-11-15

Applicant: Young Jin Kim ,  Hong Hee Park ,  Kwang Ha Suh ,  Tae Hee Lee ,  Joon Hwan Oh

Inventor： Young Jin Kim ,  Hong Hee Park ,  Kwang Ha Suh ,  Tae Hee Lee ,  Joon Hwan Oh

IPC: F25C5/08 ,  F25C1/00

CPC classification number: F25C1/18 ,  F25C2600/02 ,  F25C2600/04 ,  F25C2700/14

Abstract: Ice maker including an ice making container (100) having a plurality of cavities (120) for forming ice, a heater body (210) on one side of the ice making container for selective generation of heat, and heating bars (220) each extended from the heater body to the cavity by a predetermined length with a profile in conformity with a bottom surface profile of the cavity (120) with a gap to the bottom surface such that the heating bar (220) is submerged under water in the cavity for causing a temperature gradient during ice making.

Abstract translation: 制冰机包括具有用于形成冰的多个空腔（120）的制冰容器（100），用于选择性地产生热量的制冰容器的一侧的加热器主体（210）和每个延伸的加热棒（220） 从所述加热器主体到所述空腔预定长度，具有与所述空腔（120）的底表面轮廓一致的轮廓与所述底部表面具有间隙，使得所述加热棒（220）浸没在所述空腔内的水下， 在制冰时引起温度梯度。

公开(公告)号：US20090230442A1

公开(公告)日：2009-09-17

申请号：US12382281

申请日：2009-03-12

Applicant: Won-Joo KIM ,  Sang-moo CHOI ,  Tae-hee LEE

Inventor： Won-Joo KIM ,  Sang-moo CHOI ,  Tae-hee LEE

IPC: H01L29/78

CPC classification number: H01L29/7317 ,  H01L29/7841 ,  H01L29/785 ,  H01L29/78618 ,  H01L29/78654

Abstract: Provided is a semiconductor apparatus including a substrate region, an active region on the substrate region, a gate pattern on the active region, and first and second impurities-doped regions along both edges of the active region that do not overlap the gate pattern. The length of the first and second impurities-doped regions in the horizontal direction may be shorter than in the vertical direction. The first and second impurities-doped regions may be formed to be narrow along both edges of the active region so as not to overlap the gate pattern.

Abstract translation: 提供了一种半导体装置，其包括衬底区域，衬底区域上的有源区域，有源区域上的栅极图案，以及不与栅极图案重叠的有源区域沿着两个边缘的第一和第二杂质掺杂区域。 第一和第二杂质掺杂区域在水平方向上的长度可以比​​在垂直方向上短。 第一和第二杂质掺杂区域可以形成为沿着有源区域的两个边缘窄，以便不与栅极图案重叠。

公开(公告)号：US20090212364A1

公开(公告)日：2009-08-27

申请号：US12219360

申请日：2008-07-21

Applicant: Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

Inventor： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

IPC: H01L27/12 ,  H01L21/00

CPC classification number: H01L29/7841

Abstract: Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.

Abstract translation: 提供半导体基板及其制造方法。 半导体衬底包括衬底区域，绝缘区域和浮体区域。 绝缘区域设置在基板区域上。 浮体区域通过绝缘区域与基板区域分离，并且设置在绝缘区域上。 基板区域和浮体区域由具有相同特性的材料形成。 制造半导体衬底的方法包括通过蚀刻大块衬底形成至少一个浮体图案，通过蚀刻浮体图案的下部中间部分将本体衬底分离成衬底区域和浮体区域，以及填充绝缘体 在浮体区域和衬底区域之间的材料。

公开(公告)号：US20090212320A1

公开(公告)日：2009-08-27

申请号：US12219990

申请日：2008-07-31

Applicant: Won-joo Kim ,  Dae-kil Cha ,  Tae-hee Lee ,  Yoon-dong Park

Inventor： Won-joo Kim ,  Dae-kil Cha ,  Tae-hee Lee ,  Yoon-dong Park

IPC: H01L29/739

CPC classification number: H01L29/7391 ,  G11C11/404 ,  G11C2211/4016 ,  H01L21/84 ,  H01L27/1023 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10873 ,  H01L27/1203 ,  H01L29/7841 ,  H01L29/8618

Abstract: Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed on the semiconductor substrate and on opposing sides of the body region, and first and second impurity doped regions disposed on an upper surface of the body region. The gate patterns may be separated from the first and second impurity doped regions by, or greater than, a desired distance, such that the gate patterns do not to overlap the first and second impurity doped regions in a direction perpendicular to the first and second impurity doped regions.

Abstract translation: 提供包括其的半导体器件和半导体器件。 半导体器件包括设置在半导体衬底上的主体区域，设置在半导体衬底上并位于体区域的相对侧上的栅极图案，以及设置在身体区域的上表面上的第一和第二杂质掺杂区域。 栅极图案可以与第一和第二杂质掺杂区域分开或大于期望的距离，使得栅极图案在垂直于第一和第二杂质的方向上不与第一和第二杂质掺杂区域重叠 掺杂区域。

公开(公告)号：US20090182006A1

公开(公告)日：2009-07-16

申请号：US12318845

申请日：2009-01-09

Applicant: Ae Ri Kim ,  Jin Hwa Lee ,  Ki Sook Park ,  Jong Ryoo Choi ,  Tae Hee Lee ,  Jay Hyok Chang ,  Do Hyun Nam ,  Hoon Choi

Inventor： Ae Ri Kim ,  Jin Hwa Lee ,  Ki Sook Park ,  Jong Ryoo Choi ,  Tae Hee Lee ,  Jay Hyok Chang ,  Do Hyun Nam ,  Hoon Choi

IPC: A61K31/4375 ,  C07D471/04 ,  A61P31/04

CPC classification number: C07D471/04 ,  A61K31/4375 ,  C07B2200/13 ,  C07C309/04

Abstract: 7-(3-Aminomethyl-4-methoxyiminopyrrolidin-1-yl)-1-cyclopropyl-6-fluoro-4-oxo-1,4-dihydro-1,8-naphthyridine-3-carboxylic acid methanesulfonate and hydrates thereof, processes for their preparation, pharmaceutical compositions comprising them, and their use in antibacterial therapy.

Abstract translation: 7-（3-氨基甲基-4-甲氧基亚氨基吡咯烷-1-基）-1-环丙基-6-氟-4-氧代-1,4-二氢-1,8-二氮杂萘-3-羧酸甲磺酸盐及其水合物，方法 用于其制备，包含它们的药物组合物及其在抗菌治疗中的用途。