TEMPERATURE SENSING OF AN ARRAY FROM TEMPERATURE DEPENDENT PROPERTIES OF A PN JUNCTION

    公开(公告)号:US20220334000A1

    公开(公告)日:2022-10-20

    申请号:US17230277

    申请日:2021-04-14

    Abstract: Methods and apparatus for extracting temperature information for an array from a signal through first and second contacts based on temperature dependent properties of the a PN junction. An example method includes connecting first and second PN junctions to a bias source to reverse bias the first and second PN junctions, connecting a first contact to the first PN junction, connecting a second contact to N type material forming a junction with P type material of the first PN junction, and extracting temperature information for the first PN junction from a signal through the first and second contacts based on temperature dependent properties of the first PN junction.

    PHOTONIC ROIC HAVING SAFETY FEATURES

    公开(公告)号:US20220291358A1

    公开(公告)日:2022-09-15

    申请号:US17197314

    申请日:2021-03-10

    Abstract: Methods and apparatus for a controlling a stimulus source to direct photons to a pixel in a pixel array contained in a detector system, analyzing a response of the pixel in the pixel array; and generating an alert based on the response of the pixel in the pixel array. Example stimulus sources include a conductive trace, a PN junction, and a current source.

    Photodetector with a buried layer
    73.
    发明授权

    公开(公告)号:US11217718B2

    公开(公告)日:2022-01-04

    申请号:US16740816

    申请日:2020-01-13

    Abstract: According to an embodiment of the present disclosure, a photodetector device can include a substrate layer; a bottom contacting layer disposed over a surface of the substrate layer and having a first contacting region and a second contacting region, the bottom contacting layer providing a low resistance path between the first and second contacting regions; an insulating layer disposed over a surface of the bottom contacting layer; an intrinsic region disposed within the insulating layer, the intrinsic region in electrical contact with the first contacting region of the bottom contacting layer, the intrinsic region comprising a low band-gap material; a metal contact disposed within the insulating layer and in electrical contact with the second contacting region of the bottom contacting layer; an anode in electrical contact with the intrinsic region; and a cathode in electrical contact with the metal contact.

    Magnetic field sensor with spacer
    75.
    发明授权

    公开(公告)号:US10921391B2

    公开(公告)日:2021-02-16

    申请号:US16527319

    申请日:2019-07-31

    Abstract: Methods and apparatus for a magnetic field sensor integrated circuit including a lead frame having a first surface, a second opposing surface, and a plurality of leads. A substrate has a first surface supporting a magnetic field sensing element and a second surface attached to the first surface of the lead frame. A magnet has a first surface and a second, opposing surface, and is configured to generate a magnetic field. A spacer is positioned between the first surface of the magnet and the second surface of the lead frame with a thickness selected to establish a predetermined distance between the first surface of the magnet and the magnetic field sensing element, the predetermined distance selected to provide the magnetic field signal as a sinusoidal signal.

    MAGNETIC FIELD SENSOR WITH SPACER
    77.
    发明申请

    公开(公告)号:US20200041583A1

    公开(公告)日:2020-02-06

    申请号:US16527319

    申请日:2019-07-31

    Abstract: Methods and apparatus for a magnetic field sensor integrated circuit including a lead frame having a first surface, a second opposing surface, and a plurality of leads. A substrate has a first surface supporting a magnetic field sensing element and a second surface attached to the first surface of the lead frame. A magnet has a first surface and a second, opposing surface, and is configured to generate a magnetic field. A spacer is positioned between the first surface of the magnet and the second surface of the lead frame with a thickness selected to establish a predetermined distance between the first surface of the magnet and the magnetic field sensing element, the predetermined distance selected to provide the magnetic field signal as a sinusoidal signal.

    Magnetic Field Sensor Having Magnetoresistance Elements with Opposite Bias Directions

    公开(公告)号:US20190219643A1

    公开(公告)日:2019-07-18

    申请号:US15895418

    申请日:2018-02-13

    Abstract: A magnetic field sensor can include a substrate, a first magnetoresistance element disposed over the substrate and including a first maximum response axis and a first bias layer structure configured to generate a first bias magnetic field with a first magnetic direction between ninety degrees and sixty degrees relative to the first maximum response axis. The magnetic field sensor can also include a second magnetoresistance element disposed over the substrate and including a second maximum response axis parallel to the first maximum response axis and a second bias layer structure configured to generate a second bias magnetic field with a second magnetic direction parallel to the first magnetic direction and opposed to the first magnetic direction. The first and second magnetoresistance elements can each have a pair of electrical contacts for coupling to circuits.

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