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    Temperature sensing of a photodetector array
    2.
    发明授权
    Temperature sensing of a photodetector array 有权

    公开(公告)号：US11601733B2

    公开(公告)日：2023-03-07

    申请号：US17230276

    申请日：2021-04-14

    Applicant: Allegro MicroSystems, LLC

    Inventor： Bryan Cadugan

    IPC: H04N25/63 ,  H01L27/146

    Abstract: Methods and apparatus for temperature sensing in a detector system. Dark current from pixels in a pixel array of the detector system can be filtered to remove noise and processed to determine a temperature of the pixel array from the filtered dark current. Calibration of the dark current for a range of temperatures can be performed. In embodiments, the pixels comprise photodiodes.

    Photodetector with a buried layer
    4.
    发明授权
    Photodetector with a buried layer 有权

    公开(公告)号：US11296247B2

    公开(公告)日：2022-04-05

    申请号：US16272005

    申请日：2019-02-11

    Applicant: Allegro MicroSystems, LLC

    Inventor： Bryan Cadugan ,  Harianto Wong ,  William P. Taylor

    IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/105

    Abstract: An electronics module assembly for detecting photons is provided to include: a substrate layer; a buried layer deposited upon a first surface area of the substrate layer; an intrinsic layer deposited upon a first portion of a first surface area of the buried layer; a plug layer deposited upon a second portion of the first surface area of the buried layer; a p-plus layer deposited upon a first surface area of the intrinsic layer; an n-plus layer deposited upon a first surface area of the plug layer; a pre-metal dielectric (PMD) layer deposited upon the p-plus layer and n-plus layer; a first node coupled, through the PMD layer, to the p-plus layer; and a second node coupled, through the PMD layer, to the n-plus layer.

    PHOTODETECTOR WITH A BURIED LAYER
    6.
    发明申请
    PHOTODETECTOR WITH A BURIED LAYER 审中-公开

    公开(公告)号：US20200259033A1

    公开(公告)日：2020-08-13

    申请号：US16740816

    申请日：2020-01-13

    Applicant: Allegro MicroSystems, LLC

    Inventor： Bryan Cadugan ,  Harianto Wong ,  William P. Taylor

    IPC: H01L31/102 ,  H01L31/0224 ,  H01L31/18

    Abstract: According to an embodiment of the present disclosure, a photodetector device can include a substrate layer; a bottom contacting layer disposed over a surface of the substrate layer and having a first contacting region and a second contacting region, the bottom contacting layer providing a low resistance path between the first and second contacting regions; an insulating layer disposed over a surface of the bottom contacting layer; an intrinsic region disposed within the insulating layer, the intrinsic region in electrical contact with the first contacting region of the bottom contacting layer, the intrinsic region comprising a low band-gap material; a metal contact disposed within the insulating layer and in electrical contact with the second contacting region of the bottom contacting layer; an anode in electrical contact with the intrinsic region; and a cathode in electrical contact with the metal contact.

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