公开(公告)号：US06210985B1

公开(公告)日：2001-04-03

申请号：US09426966

申请日：1999-10-26

Applicant: Ammar Derraa

Inventor： Ammar Derraa

IPC: H01L2100

CPC classification number: H01J9/025

Abstract: A method of fabricating field emission arrays which employs a single mask to define emitter tips and their corresponding resistors. Column lines may also be defined without requiring the use of an additional mask. The method includes disposing substantially mutually parallel conductive lines onto a substrate of the field emission array. The conductive lines may be patterned from a layer of conductive material or selectively deposited onto the substrate. One or more material layers from which the emitter tips and resistors will be defined are disposed onto the conductive lines and the regions of substrate exposed between adjacent conductive lines. The exposed surface of the layer or layers of emitter tip and resistor material or materials may be planarized. A mask is disposed over the substantially planar surface. The emitter tips and resistors are defined through the mask and substantially longitudinal center portions of the conductive lines exposed through the layer or layers of emitter tip and resistor material or materials. The substantially longitudinal center portions of the conductive lines may be removed in order to define column lines and to electrically isolate adjacent column lines from one another. A field emission array that has been fabricated in accordance with the method of the present invention is also within the scope of the present invention. Such a field emission array may include a substrate including resistors protruding therefrom, column lines laterally adjacent the resistors, and one or more emitter tips disposed substantially above each of the resistors.

Abstract translation: 一种制造场发射阵列的方法，其使用单个掩模来限定发射极尖端及其对应的电阻器。 也可以定义列线，而不需要使用额外的掩模。 该方法包括将基本相互平行的导线设置在场发射阵列的衬底上。 导电线可以从导电材料层图案化或选择性地沉积到衬底上。 将限定发射极尖端和电阻器的一个或多个材料层设置在导电线上并且暴露在相邻导电线之间的衬底区域。 发射极尖端和电阻器材料或材料的层的暴露表面可以被平坦化。 掩模设置在基本平坦的表面上。 发射极尖端和电阻器通过掩模和通过发射极尖端和电阻器材料或材料的层暴露的导线的基本纵向中心部分来限定。 可以去除导线的基本上纵向的中心部分以便限定列线并且使彼此相邻的列线电隔离。 根据本发明的方法制造的场致发射阵列也在本发明的范围内。 这样的场发射阵列可以包括包括从其突出的电阻器的衬底，与电阻器横向相邻的列线，以及基本上设置在每个电阻器上方的一个或多个发射极尖端。

公开(公告)号：US6017772A

公开(公告)日：2000-01-25

申请号：US260633

申请日：1999-03-01

Applicant: Ammar Derraa

Inventor： Ammar Derraa

IPC: H01J9/02 ,  H01L21/00

CPC classification number: H01J9/025

Abstract: A method of fabricating field emission arrays which employs a single mask to define emitter tips and their corresponding resistors. Column lines may also be defined without requiring the use of an additional mask. The method includes disposing substantially mutually parallel conductive lines onto a substrate of the field emission array. The conductive lines may be patterned from a layer of conductive material or selectively deposited onto the substrate. One or more material layers, from which the emitter tips and resistors will be defined, are disposed onto the conductive lines and the regions of substrate exposed between adjacent conductive lines. The exposed surface of the layer or layers of emitter tip and resistor material or materials may be planarized. A mask is disposed over the substanitially planar surface. The emitter tips and resistors are defined through the mask and substantially longitudinal center portions of the conductive lines exposed through the layer or layers of emitter tip and resistor material or materials. The substantially longitudinal center portions of the conductive lines may be removed in order to define column lines and to electrically isolate adjacent column lines from one another. A field emission array that has been fabricated in accordance with the method of the present invention is also within the scope of the present invention. Such a field emission array may include a substrate including resistors protruding, therefrom, column lines laterally adjacent the resistors, and one or more emitter tips disposed substantially above each of the resistors.

Abstract translation: 一种制造场发射阵列的方法，其使用单个掩模来限定发射极尖端及其对应的电阻器。 也可以定义列线，而不需要使用额外的掩模。 该方法包括将基本相互平行的导线设置在场发射阵列的衬底上。 导电线可以从导电材料层图案化或选择性地沉积到衬底上。 将限定发射极尖端和电阻器的一个或多个材料层设置在导线上并且暴露在相邻导线之间的衬底区域。 发射极尖端和电阻器材料或材料的层的暴露表面可以被平坦化。 掩模设置在基本平坦的表面上。 发射极尖端和电阻器通过掩模和通过发射极尖端和电阻器材料或材料的层暴露的导线的基本纵向中心部分来限定。 可以去除导线的基本上纵向的中心部分以便限定列线并且使彼此相邻的列线电隔离。 根据本发明的方法制造的场致发射阵列也在本发明的范围内。 这样的场致发射阵列可以包括一个衬底，包括从其上突出的电阻器，与电阻器横向相邻的列线，以及一个或多个基本上设置在每个电阻器上方的发射极尖端。

公开(公告)号：US6008063A

公开(公告)日：1999-12-28

申请号：US259701

申请日：1999-03-01

Applicant: Ammar Derraa

Inventor： Ammar Derraa

IPC: H01J3/02 ,  H01J9/02 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2329/00

Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the present invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array. A second masks employed to facilitate the removal of passivation material and conductive material from the desired areas of pixel openings. The present invention also includes field emission arrays having a semiconductive grid and a relatively thin passivation layer exposed between adjacent row lines.

Abstract translation: 一种在场发射阵列上制造行线的方法。 该方法仅采用两个掩模步骤来通过每条行线的选定区域来定义行线和像素开口。 根据本发明的方法，将导电材料层设置在半导体材料格栅的基本上平坦化的表面上。 然后将一层钝化材料设置在导电材料层上。 在该方法的一个实施例中，可以使用第一掩模来从相邻的像素行之间以及从场发射阵列的每个像素的大致上方去除钝化材料和导电材料。 采用第二掩模从相邻的像素行之间移除半导体材料。 在该方法的另一个实施例中，使用第一掩模以便于从场致发射阵列的相邻行像素之间移除钝化材料，导电材料和半导体材料。 用于促进从像素开口的所需区域去除钝化材料和导电材料的第二掩模。 本发明还包括具有半导电栅格的场发射阵列和暴露在相邻行线之间的相对薄的钝化层。