公开(公告)号：US08324950B2

公开(公告)日：2012-12-04

申请号：US13034363

申请日：2011-02-24

申请人： Sung Tae Kim ,  Sang Gyu Park ,  Kyung Uk Kim ,  Dong Ok Han ,  Seung Chul Pyo ,  Soo Woong Lee

发明人： Sung Tae Kim ,  Sang Gyu Park ,  Kyung Uk Kim ,  Dong Ok Han ,  Seung Chul Pyo ,  Soo Woong Lee

IPC分类号： G01R29/02 ,  H03K3/356

CPC分类号： H03K3/3565

摘要： There are provided a Schmitt trigger circuit that has hysteresis characteristics in which a release point and an operating point are determined based on a width of an inputted pulse. The Schmitt trigger circuit may include a signal/pulse conversion unit that receives an analog signal to generate an input pulse having a width corresponding to a magnitude of the analog signal, a pulse width determination unit that compares the width of the input pulse generated in the signal/pulse conversion unit with a predetermined first threshold width and a second threshold width greater than the first threshold width to output state information indicating the compared result, and an output determination unit that outputs a high signal, when the width of the input pulse is changed from a state of being smaller than the second threshold width to a state of being greater than the second threshold width based on the state information, and outputs a low signal when the width of the input pulse is changed from a state of being greater than the first threshold width to a state of being smaller than the first threshold width based on the state information.

摘要翻译： 提供了具有滞后特性的施密特触发电路，其中基于输入脉冲的宽度来确定释放点和操作点。 施密特触发电路可以包括：信号/脉冲转换单元，其接收模拟信号以产生具有对应于模拟信号的幅度的宽度的输入脉冲;脉冲宽度确定单元，其将生成的输入脉冲的宽度进行比较 信号/脉冲转换单元，具有预定的第一阈值宽度和大于第一阈值宽度的第二阈值宽度，以输出指示比较结果的状态信息;以及输出确定单元，当输入脉冲的宽度为 根据状态信息从小于第二阈值宽度的状态变为大于第二阈值宽度的状态，并且当输入脉冲的宽度从大于 基于状态信息将第一阈值宽度设置为小于第一阈值宽度的状态。

公开(公告)号：US20120091102A1

公开(公告)日：2012-04-19

申请号：US13276215

申请日：2011-10-18

申请人： Sung Tae Kim ,  Byung Chul Kim

发明人： Sung Tae Kim ,  Byung Chul Kim

IPC分类号： H01H33/664

CPC分类号： H01H33/6643

摘要： According to the present invention, there is disclosed a contact of the vacuum interrupter, comprises a plurality of slot portions formed in an extended manner toward an outer circumferential surface from a plurality of positions, respectively, spaced apart from the center of a contact surface, and a petal portion formed between a pair of the adjacent slot portions, and to minimize a mechanical fragile part having a narrow width in the petal portion while inducing the rotational movement of an arc, each of the slot portion comprises a first end portion closed and adjacent to the center, a second end portion open and adjacent to the outer circumferential surface, a first slot portion linearly extended from the first end portion, and a second slot portion linearly extended to the second end portion by bending the first slot portion at a predetermined angle.

摘要翻译： 根据本发明，公开了一种真空断路器的接触，包括分别从接触表面的中心间隔开的多个位置向外周面延伸形成的多个槽部， 以及形成在一对相邻狭缝部分之间的花瓣部分，并且在引起圆弧的旋转运动的同时最小化在花瓣部分中具有窄宽度的机械脆性部分，每个狭缝部分包括封闭的第一端部和 与所述中心相邻的第二端部，与所述外周面相对地开口且相邻，第一槽部从所述第一端部线性延伸;以及第二槽部，其通过将所述第一槽部弯曲成线状地延伸到所述第二端部 预定角度。

公开(公告)号：US20120009697A1

公开(公告)日：2012-01-12

申请号：US13173423

申请日：2011-06-30

申请人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

发明人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

IPC分类号： H01L33/48 ,  C23C16/458 ,  C23C16/44

CPC分类号： H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

摘要翻译： 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

公开(公告)号：US6019654A

公开(公告)日：2000-02-01

申请号：US50061

申请日：1998-03-30

申请人： Sung Tae Kim

发明人： Sung Tae Kim

IPC分类号： H05B33/10 ,  B60C9/00 ,  H01L27/32 ,  H05B33/02

CPC分类号： H01L27/3283 ,  H01L51/5212 ,  H01L27/322

摘要： A multi-color EL display panel and a method for fabricating the same are disclosed, the panel including a transparent support, a plurality of fluorescent media on the transparent support, partition walls between the fluorescent media, a first electrode on each of the fluorescent media, a planar electroluminescent layer on the first electrodes, second electrode stripes on the electroluminescent layer, and a protective layer on the second electrode elements, whereby minimizing the color contamination and improving the spatial uniformity of luminance.

摘要翻译： 公开了一种多色EL显示面板及其制造方法，所述面板包括透明支撑体，透明支撑体上的多个荧光介质，荧光介质之间的隔壁，荧光介质中的每一个上的第一电极 ，第一电极上的平面电致发光层，电致发光层上的第二电极条和第二电极元件上的保护层，由此最小化颜色污染并提高亮度的空间均匀性。