公开(公告)号：US08895356B2

公开(公告)日：2014-11-25

申请号：US13173423

申请日：2011-06-30

申请人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

发明人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

IPC分类号： H01L21/00 ,  H01L21/16 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

摘要翻译： 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

公开(公告)号：US20120009697A1

公开(公告)日：2012-01-12

申请号：US13173423

申请日：2011-06-30

申请人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

发明人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

IPC分类号： H01L33/48 ,  C23C16/458 ,  C23C16/44

CPC分类号： H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

摘要翻译： 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

公开(公告)号：US20110198667A1

公开(公告)日：2011-08-18

申请号：US12940399

申请日：2010-11-05

申请人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/30 ,  H01L33/00 ,  H01L33/02

CPC分类号： C23C16/54 ,  C23C16/45563 ,  C30B23/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

摘要翻译： 提供了蒸镀系统，制造发光器件的方法和发光器件。 根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。 此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

公开(公告)号：US20120326121A1

公开(公告)日：2012-12-27

申请号：US13603192

申请日：2012-09-04

申请人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04

CPC分类号： C23C16/54 ,  C23C16/45563 ,  C30B23/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

摘要翻译： 提供了蒸镀系统，制造发光器件的方法和发光器件。 根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。 此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

公开(公告)号：US20120167824A1

公开(公告)日：2012-07-05

申请号：US13285596

申请日：2011-10-31

申请人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Sung Tae Kim

发明人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Sung Tae Kim

IPC分类号： H01L21/00 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/45572 ,  C23C16/45578

摘要： A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe.

摘要翻译： 一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内部室，外部室，其被构造成覆盖所述内部室以保持其密封状态; 设置在所述内部腔室内用于堆叠在其中的多个晶片的晶片保持器; 包括具有内部路径的内管，具有外部路径的外部管的气体供给器，具有冷却路径的制冷管。 内管的内部路径将第一工艺气体供应到反应室中。 外部管道的外部路径围绕内部管道以供应通过其中的第二处理气体。 制冷管道供应制冷剂以防止内管中的温度上升。

公开(公告)号：US08884269B2

公开(公告)日：2014-11-11

申请号：US13555370

申请日：2012-07-23

申请人： Jong Sun Maeng ,  Bum Joon Kim ,  Ki Sung Kim ,  Suk Ho Yoon ,  Sung Tae Kim

发明人： Jong Sun Maeng ,  Bum Joon Kim ,  Ki Sung Kim ,  Suk Ho Yoon ,  Sung Tae Kim

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L33/32 ,  H01L33/12 ,  H01L33/02

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/12

摘要： A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.

摘要翻译： 氮化物系半导体发光元件包括具有Al x Ga 1-x N（0.01＆amp; N e; x＆amp; In; 0.04）的组成的抗弯曲层，以及形成在抗弯曲层上并包括第一导电型氮化物 半导体层，有源层和第二导电型氮化物半导体层。

公开(公告)号：US20120171815A1

公开(公告)日：2012-07-05

申请号：US13276729

申请日：2011-10-19

申请人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

发明人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

IPC分类号： H01L21/50 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/303 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

摘要翻译： 提供了一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内管，以及外管，其构造成覆盖内管以保持其密封状态; 设置在所述内管内并且容纳堆叠在其中的多个晶片的晶片保持器; 以及气体供给器，其包括设置在反应室外侧的至少一个杆管，以便向其供应反应性气体;多个分支管，连接到杆管，以将反应气体从反应室的外部引入到 反应室，以及设置有分支管的多个喷嘴，以将反应气体喷射到多个相应的晶片。

公开(公告)号：US20130020555A1

公开(公告)日：2013-01-24

申请号：US13555370

申请日：2012-07-23

申请人： Jong Sun Maeng ,  Bum Joon Kim ,  Ki Sung Kim ,  Suk Ho Yoon ,  Sung Tae Kim

发明人： Jong Sun Maeng ,  Bum Joon Kim ,  Ki Sung Kim ,  Suk Ho Yoon ,  Sung Tae Kim

IPC分类号： H01L33/04

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/12

摘要： A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.

摘要翻译： 氮化物系半导体发光元件包括具有Al x Ga 1-x N（0.01＆amp; N e; x＆amp; In; 0.04）的组成的抗弯曲层，以及形成在抗弯曲层上并包括第一导电型氮化物 半导体层，有源层和第二导电型氮化物半导体层。

公开(公告)号：US08822338B2

公开(公告)日：2014-09-02

申请号：US13276729

申请日：2011-10-19

申请人： Jong Sun Maeng ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

发明人： Jong Sun Maeng ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

IPC分类号： H01L21/44

CPC分类号： C23C16/303 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

摘要翻译： 提供了一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内管，以及外管，其构造成覆盖内管以保持其密封状态; 设置在所述内管内并且容纳堆叠在其中的多个晶片的晶片保持器; 以及气体供给器，其包括设置在反应室外侧的至少一个杆管，以便向其供应反应性气体;多个分支管，连接到杆管，以将反应气体从反应室的外部引入到 反应室，以及设置有分支管的多个喷嘴，以将反应气体喷射到多个相应的晶片。

公开(公告)号：US20140191192A1

公开(公告)日：2014-07-10

申请号：US14235705

申请日：2011-07-29

申请人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

发明人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

IPC分类号： H01L33/00 ,  H01L33/06

CPC分类号： H01L33/0025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.

摘要翻译： 提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。 半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。