公开(公告)号：US20240360559A1

公开(公告)日：2024-10-31

申请号：US18139103

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Sameh HELMY ,  Hansel LO ,  Eric Kihara SHONO

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45559 ,  C23C16/45517 ,  C23C16/45574 ,  C23C16/458

Abstract: A method and processing chamber for plenum driven hydroxyl combustion oxidation. A mixture is produced in a plenum. The mixture includes a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected towards a substrate of a processing chamber at a jet gas velocity greater than a flame gas velocity. A radical is produced as a function of the first gas and the second gas while heating the chamber.

公开(公告)号：US20240352588A1

公开(公告)日：2024-10-24

申请号：US18379028

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kai WU ,  Dongming IU ,  Mehran BEHDJAT

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4587 ,  C23C16/45574 ,  C23C16/4586

Abstract: A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable a chemical vapor deposition (CVD) chamber to process substrates (also referred to as wafers herein) at different temperatures. The processing chamber includes a chamber body, a substrate support disposed within the chamber body and having a top surface, a plurality of substrate lift pins disposed through the substrate support, and a shadow ring lift assembly. The shadow ring lift assembly is operable to raise and lower a shadow ring positioned above or level with the top surface of the substrate support.

公开(公告)号：US12043895B2

公开(公告)日：2024-07-23

申请号：US18072711

申请日：2022-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Lerner ,  Prashanth Kothnur ,  Roey Shaviv ,  Satish Radhakrishnan

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45525 ,  C23C16/4557 ,  C23C16/45574

Abstract: Methods of introducing precursors through a segmented showerhead are provided herein. In some embodiments, a method of introducing precursors through a segmented showerhead having a plurality of gas delivery portions that are fluidly isolated includes heating a first gas delivery portion to a first temperature; and simultaneously heating a second gas delivery portion to a second temperature different than the first temperature, wherein each of the first and second gas delivery portions (i) have a wedge shaped body that defines a plenum, (ii) are coplanar, and (iii) together form a showerhead having a circular shape.

公开(公告)号：US20240240307A1

公开(公告)日：2024-07-18

申请号：US18410046

申请日：2024-01-11

Applicant: Tokyo Electron Limited

Inventor： Takafumi NOGAMI ,  Yoshiki NAKANO

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/505

CPC classification number: C23C16/345 ,  C23C16/45574 ,  C23C16/505

Abstract: A method of forming a silicon nitride film includes: preparing a substrate in a processing container, the substrate having a graphene film on a surface of the substrate; supplying a nitrogen-containing gas into the processing container; supplying a Si precursor gas into the processing container after the nitrogen-containing gas is supplied and after a pressure control inside the processing container is stabilized; generating plasma within the processing container by supplying radio-frequency power for plasma generation after the Si precursor gas is supplied and before the pressure control inside the processing container is stabilized; and forming the silicon nitride film on the graphene film by exposing the substrate to the plasma.

公开(公告)号：US20240183034A1

公开(公告)日：2024-06-06

申请号：US18442427

申请日：2024-02-15

Applicant: Lam Research Corporation

Inventor： Pulkit AGARWAL ,  Adrien LAVOIE ,  Purushottam KUMAR

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/45536 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/0228

Abstract: A method for processing a substrate is provided, wherein the substrate is located below a showerhead in a processing chamber. A deposition layer is deposited on the substrate, wherein at least one deposition gas is provided through the showerhead. A secondary purge gas is flowed during the depositing the deposition layer from a location outside of the showerhead in the processing chamber forming a flow curtain around an outer edge of the showerhead, wherein the secondary purge gas comprises at least one component gas. A partial pressure of the at least one component gas is changed over time during the depositing the deposition layer, wherein the depositing the deposition layer has a non-uniformity, wherein the changing the partial pressure changes the non-uniformity over time during the depositing the deposition layer.

公开(公告)号：US20240167161A1

公开(公告)日：2024-05-23

申请号：US18427348

申请日：2024-01-30

Applicant: Lam Research Corporation

Inventor： Fayaz A. Shaikh ,  Adriana Vintila ,  Matthew Mudrow ,  Nick Ray Linebarger, JR. ,  Xin Yin ,  James F. Lee ,  Brian Joseph Williams

IPC: C23C16/458 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509

CPC classification number: C23C16/4585 ,  C23C16/042 ,  C23C16/4409 ,  C23C16/45521 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45597 ,  C23C16/509

Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes a showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer.

公开(公告)号：US11887855B2

公开(公告)日：2024-01-30

申请号：US17223506

申请日：2021-04-06

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/28 ,  C23C16/06 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/34 ,  C23C16/42

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/4557 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US11834744B2

公开(公告)日：2023-12-05

申请号：US18173704

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01L21/285 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4581 ,  C23C16/45574 ,  H01J37/32495 ,  H01J37/32559 ,  H01L21/28512 ,  H01L21/3213

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US20230366094A1

公开(公告)日：2023-11-16

申请号：US18351681

申请日：2023-07-13

Applicant: Novellus Systems, Inc.

Inventor： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67 ,  H01L21/02 ,  C23C16/24 ,  C23C16/54

CPC classification number: C23C16/50 ,  H01J37/32137 ,  C23C16/45565 ,  H01J37/32155 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45574 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67207 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/67201 ,  C23C16/24 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/02123 ,  H01L21/022 ,  C23C16/45512 ,  H01L21/02274

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

公开(公告)号：US11791136B2

公开(公告)日：2023-10-17

申请号：US17240695

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Yi Yang ,  Truong Nguyen ,  Nattaworn Boss Nunta ,  Joseph F. Aubuchon ,  Tuan Anh Nguyen ,  Karthik Janakiraman

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/509

CPC classification number: H01J37/32449 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4557 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32522 ,  C23C16/45574 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate, a central opening in fluid communication with the central gas channel, and a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.