公开(公告)号：US20240318312A1

公开(公告)日：2024-09-26

申请号：US18679771

申请日：2024-05-31

申请人： Lam Research Corporation

发明人： Rachel E. Batzer ,  Huatan Qiu ,  Bhadri N. Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC分类号： C23C16/455 ,  B05C13/02 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC分类号： C23C16/45565 ,  C23C16/45572 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785 ,  B05C13/02 ,  C23C16/4581 ,  C23C16/4583 ,  H01J37/32642 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6715

摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US20230203658A1

公开(公告)日：2023-06-29

申请号：US18008325

申请日：2021-04-30

申请人： LAM RESEARCH CORPORATION

发明人： Andrew BORTH ,  Sean M. DONNELLY

IPC分类号： C23C16/455 ,  C23C16/44

CPC分类号： C23C16/45572 ,  C23C16/45565 ,  C23C16/4408 ,  C23C16/45591

摘要： A cooling assembly includes a first subassembly and a second subassembly. The first subassembly is coupled to a showerhead of a substrate processing system. The first subassembly including a plurality of passages proximate to and in thermal communication with the showerhead. The second subassembly is removably coupled to the first subassembly. The second subassembly includes a plurality of protrusions that align with the plurality of passages, respectively.

公开(公告)号：US20190229267A1

公开(公告)日：2019-07-25

申请号：US16307110

申请日：2017-06-08

申请人： AIXTRON SE

发明人： Markus GERSDORFF ,  Markus JAKOB ,  Markus SCHWAMBERA

IPC分类号： H01L51/00 ,  C23C16/04 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  H01L51/56

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C16/042 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4583 ,  C23C16/52 ,  H01L51/001 ,  H01L51/56

摘要： A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the gas inlet element and the substrates from each other; mask holders arranged after the shielding element in the flow direction, each for holding a mask; and substrate holders for holding at least one of the substrates, each substrate holder corresponding to one of the plurality of mask holders. For each of the substrate holders, a displacement element is provided for displacing the substrate holder from a position distant from the mask holder to a position adjacent to the mask holder.

公开(公告)号：US20180163305A1

公开(公告)日：2018-06-14

申请号：US15378854

申请日：2016-12-14

申请人： Lam Research Corporation

发明人： Rachel Batzer ,  Huatan Qiu ,  Bhadri Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC分类号： C23C16/455 ,  C23C16/50 ,  H01L21/02

CPC分类号： C23C16/45565 ,  C23C16/45572 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32522

摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US09587312B2

公开(公告)日：2017-03-07

申请号：US14232246

申请日：2012-07-05

申请人： Hugo Silva ,  Nico Jouault ,  Victor Saywell ,  Fred Crawley ,  Martin Dauelsberg ,  Johannes Lindner

发明人： Hugo Silva ,  Nico Jouault ,  Victor Saywell ,  Fred Crawley ,  Martin Dauelsberg ,  Johannes Lindner

IPC分类号： C23C16/455 ,  C23C16/30 ,  C30B25/14

CPC分类号： C23C16/45591 ,  C23C16/301 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45576 ,  C30B25/14

摘要： A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.

摘要翻译： CVD反应器的气体入口构件包括：气体入口壳体，其具有通过进料管线供给处理气体的气体分配体积和多个气体管线，每个气体管线形成为管和布置在前面的气体出口板的接合开口 的入口壳体壁，并且工艺气体通过入口壳体壁进入处理室。 冷却剂室邻接气体入口壳体壁，并且冷却剂冷却气体入口壳体壁和与气体入口壳体壁导热接触的气体管线的出口端。 气体出口板因此与气体入口壳体壁热分离，使得由来自处理室的辐射热作用的气体出口板比延伸到气体开口中的出口端更加强烈地加热 出口板。

公开(公告)号：US09534724B2

公开(公告)日：2017-01-03

申请号：US13891138

申请日：2013-05-09

申请人： Advanced Micro-Fabrication Equipment Inc, Shanghai

发明人： Yong Jiang ,  Ning Zhou ,  Henry Ho ,  Zhiyou Du

IPC分类号： C23C16/455 ,  C30B25/14 ,  F16L53/00 ,  H01L21/67

CPC分类号： F16L53/00 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  H01L21/67109 ,  Y10T137/0402 ,  Y10T137/6416

摘要： The present application provides a gas showerhead including a gas distribution and diffusion plate and a water cooling plate, the gas distribution and diffusion plate includes several columns of first gas diffusion passages connecting to a first reactant gas source and several columns of second gas diffusion passages connecting to a second reactant gas source; the water cooling plate having cooling liquid passages is arranged below the gas distribution and diffusion plate, and the water cooling plate is provided with first gas outlet passages provided for the reactant gas in the first gas diffusion passages to flow out and second gas outlet passages provided for the reactant gas in the second gas diffusion passages to flow out, so as to isolatedly feed at least two reactant gases into a reaction chamber.

摘要翻译： 本申请提供了一种包括气体分布扩散板和水冷板的气体喷头，气体分配扩散板包括连接到第一反应气体源的多列第一气体扩散通道和连接到第一气体扩散通道的多列第二气体扩散通道 到第二反应物气体源; 具有冷却液通道的水冷却板布置在气体分配扩散板的下方，并且水冷却板设置有用于第一气体扩散通道中的反应气体的第一气体出口通道，以及第二气体出口通道， 因为第二气体扩散通道中的反应气体流出，从而将至少两种反应气体隔离地供入反应室。

公开(公告)号：US09309148B2

公开(公告)日：2016-04-12

申请号：US14152078

申请日：2014-01-10

申请人： ASAHI GLASS COMPANY, LIMITED

发明人： Kuniaki Hiromatsu ,  Masanobu Shirai ,  Junichi Miyashita ,  Tomohiro Yonemichi ,  Takeo Endo

IPC分类号： C03C17/245 ,  C03C17/00 ,  C03B25/08 ,  C23C16/455 ,  C23C16/46

CPC分类号： C03C17/2456 ,  C03B25/08 ,  C03C17/002 ,  C23C16/45572 ,  C23C16/45595 ,  C23C16/46

摘要： An area S (m2) of a facing surface of each of injectors which faces a glass ribbon is set so as to satisfy: S≦(0.0116×P×Cg×T)/{ε×F×σ(Tgla4−Tinj4)}, wherein P is an output (ton/day) of the glass ribbon; Cg is a specific heat (J/(kg·° C.)) of the glass; T is an acceptable temperature drop (° C.); ε is radiation factor; F is a surface-to-surface view factor; σ is Boltzmann's constant; Tgla is a temperature (K) of the glass ribbon represented by K=(Tin+Tout)/2 where Tin and Tout are measured values of the glass ribbon at the inlet and outlet of the injector, respectively; and Tinj is a temperature (K) of the facing surface of the injector.

摘要翻译： 将每个喷射器的面对玻璃带的面对面的面积S（m2）设定为满足：S＆NlE;（0.0116×P×Cg×T）/ {＆egr;×F×＆sgr（Tgla4-Tinj4 ）}，其中P是玻璃带的输出（吨/天）; Cg是玻璃的比热（J /（kg·℃））; T是可接受的温度降（℃）; ＆egr 是放射因子; F是一个表面到地面的视图因子; ＆sgr 是玻尔兹曼常数; Tgla是由K =（Tin + Tout）/ 2表示的玻璃带的温度（K），其中Tin和Tout分别是在喷射器的入口和出口处的玻璃带的测量值; Tinj是喷射器的面对表面的温度（K）。

公开(公告)号：US09171994B2

公开(公告)日：2015-10-27

申请号：US14518948

申请日：2014-10-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

IPC分类号： H01L21/00 ,  H01L33/00 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

摘要翻译： 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

公开(公告)号：US20150007770A1

公开(公告)日：2015-01-08

申请号：US13934597

申请日：2013-07-03

申请人： Novellus Systems, Inc.

发明人： Ramesh Chandrasekharan ,  Jennifer L. Petraglia

IPC分类号： H01L21/02 ,  C23C16/455

CPC分类号： C23C16/45572 ,  B05B1/18 ,  C23C16/45565 ,  C23C16/45574

摘要： A dual-temperature, multi-plenum showerhead for use in semiconductor processing equipment is described. The showerhead may supply multiple separate gases to a wafer reaction area while keeping the gases largely segregated within the showerhead. Additionally, the showerhead may be configured to allow a faceplate of the showerhead to be maintained at a significantly higher temperature than the rest of the showerhead.

摘要翻译： 描述了一种用于半导体加工设备的双温度多通风淋浴喷头。 淋浴头可以向晶片反应区域供应多个单独的气体，同时保持气体在淋浴喷头内部大大分离。 此外，喷头可以被配置成允许喷头的面板保持在比其余喷头的显着更高的温度。

公开(公告)号：US08882913B2

公开(公告)日：2014-11-11

申请号：US12089695

申请日：2007-02-16

申请人： Chul Soo Byun ,  Man Cheol Han

发明人： Chul Soo Byun ,  Man Cheol Han

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/00 ,  H01L21/67

CPC分类号： C23C16/45565 ,  C23C16/40 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/67069

摘要： The present invention is related to an apparatus and a method for chemical vapor deposition (CVD) using a showerhead through which a reactive gas of at least one kind and a purge gas is injected over a substrate on which a film is growing. A plural number of reactive gas showerhead modules are laid on a purge gas showerhead module. Each reactive gas is injected from a bottom of the showerhead after flowing through the showerhead as separated, thereby preventing the reactive gases from causing homogeneous gas phase reactions and from generating unwanted particles at the inside of the showerhead. And a purge gas is injected from the bottom surface of the showerhead by forming a protective curtain, thereby suppressing diffusion of the reactive gas injected backwardly. Each reactive gas is mixed with an injection support gas which is a kind of inert gas in a mixing zone at inside of the showerhead, where the injection velocity of each reactive gas is regulated positively by the amount of the injection support gas mixed. The present invention further includes an apparatus and a method, wherein the showerhead is cooled by a cooling jacket which keeps the temperature of the showerhead at proper levels to prevent both the condensation and the thermal decomposition of the reactive gas used.

摘要翻译： 本发明涉及一种使用喷头的化学气相沉积（CVD）的装置和方法，通过该喷头，将至少一种反应性气体和净化气体喷射到其上生长薄膜的基板上。 多个反应气体淋浴喷头模块被放置在吹扫气喷头模块上。 每个反应气体在分离后流过喷头后从喷头的底部注入，从而防止反应气体引起均匀的气相反应并在喷头内部产生不需要的颗粒。 并且通过形成保护帘从喷头的底面注入吹扫气体，从而抑制向后注入的反应气体的扩散。 每个反应气体与在喷头内部的混合区域中的一种惰性气体的注入支持气体混合，其中每个反应气体的注射速度受到混合的注射支持气体的量的积极调节。 本发明还包括一种装置和方法，其中喷头由冷却套冷却，冷却套将喷头的温度保持在适当的水平，以防止所用反应气体的冷凝和热分解。