公开(公告)号：US20150325436A1

公开(公告)日：2015-11-12

申请号：US14274406

申请日：2014-05-09

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Steven Bentley ,  Ajey P. Jacob

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/20 ,  H01L29/78

CPC classification number: H01L21/02538 ,  H01L29/20 ,  H01L29/66 ,  H01L29/66795 ,  H01L29/785

Abstract: Semiconductor devices including a fin and method of forming the semiconductor devices are provided herein. In an embodiment, a method of forming a semiconductor device includes forming a fin overlying a semiconductor substrate. The fin is formed by epitaxially-growing a semiconductor material over the semiconductor substrate, and the fin has a first portion that is proximal to the semiconductor substrate and a second portion that is spaced from the semiconductor substrate by the first portion. A gate structure is formed over the fin and the semiconductor substrate. The first portion of the fin is etched to form a gap between the second portion and the semiconductor substrate.

Abstract translation: 本文提供了包括翅片的半导体器件和形成半导体器件的方法。 在一个实施例中，形成半导体器件的方法包括形成覆盖半导体衬底的散热片。 鳍状物通过在半导体衬底上外延生长半导体材料而形成，并且鳍具有靠近半导体衬底的第一部分和通过第一部分与半导体衬底间隔开的第二部分。 在鳍片和半导体衬底上形成栅极结构。 蚀刻鳍的第一部分以在第二部分和半导体衬底之间形成间隙。

公开(公告)号：US20150303249A1

公开(公告)日：2015-10-22

申请号：US14254866

申请日：2014-04-16

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Steven Bentley ,  Kejia Wang ,  Sylvie Mignot ,  Shurong Liang

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/02057 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/76224 ,  H01L29/267 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: Integrated circuits and methods for producing such integrated circuits are provided. A method for producing the integrated circuit includes forming dummy structures in a substrate, and forming shallow trench isolation regions between the dummy structures where the shallow trench isolation regions includes a liner overlying a core. The dummy structures are etched to expose structure bases, and the structure bases are precleaned. Replacement structures are epitaxially grown over the structure bases.

Abstract translation: 提供了用于制造这种集成电路的集成电路和方法。 一种用于制造集成电路的方法包括在衬底中形成虚拟结构，以及在虚设结构之间形成浅沟槽隔离区，其中浅沟槽隔离区包括覆盖在芯上的衬垫。 蚀刻虚拟结构以暴露结构基底，并且将结构基底预清洁。 替代结构在结构基底上外延生长。