公开(公告)号：US20150067249A1

公开(公告)日：2015-03-05

申请号：US14538095

申请日：2014-11-11

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xinyuan Wang ,  Haoyu Song

IPC: G11C11/406 ,  G06F13/16

CPC classification number: G11C11/40615 ,  G06F13/1689

Abstract: In a memory scheduling method, a memory controller writes a first group of first row strobe commands (ACTs) into a first memory. The first group of first ACTs includes multiple first ACTs and a periodic interval exists between two adjacent first ACTs written by the memory controller into the first memory. The memory controller writes operation commands that correspond to the first group of first ACTs into the first memory after writing the first group of first ACTs into the first memory. The memory controller writes second ACTs into a second memory in periodic intervals for writing the first group of first ACTs into the first memory and/or in periodic intervals for writing the operation commands that correspond to the first group of first ACTs. The memory controller writes operation commands that correspond to the second ACTs into the second memory.

Abstract translation: 在存储器调度方法中，存储器控制器将第一组第一行选通命令（ACT）写入第一存储器。 第一组第一ACT包括多个第一ACT，并且在由存储器控制器写入第一存储器的两个相邻的第一ACT之间存在周期性间隔。 存储器控制器将第一组第一ACT写入第一存储器之后，将与第一组第一ACT对应的操作命令写入第一存储器。 存储器控制器以周期性间隔将第二ACT写入第二存储器，以将第一组第一ACT写入第一存储器和/或以周期性间隔写入与第一组ACT相对应的操作命令。 存储器控制器将对应于第二ACT的操作命令写入第二存储器。