公开(公告)号：US20210035901A1

公开(公告)日：2021-02-04

申请号：US17075533

申请日：2020-10-20

Applicant: Intel Corporation

Inventor： Srinivas V. PIETAMBARAM ,  Jung Kyu HAN ,  Ali LEHAF ,  Steve CHO ,  Thomas HEATON ,  Hiroki TANAKA ,  Kristof DARMAWIKARTA ,  Robert Alan MAY ,  Sri Ranga Sai BOYAPATI

IPC: H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00

Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

公开(公告)号：US20200266184A1

公开(公告)日：2020-08-20

申请号：US16649923

申请日：2017-12-29

Applicant: Intel Corporation

Inventor： Srinivas PIETAMBARAM ,  Robert Alan MAY ,  Kristof DARMAWIKARTA ,  Hiroki TANAKA ,  Rahul N. MANEPALLI ,  Sri Ranga Sai BOYAPATI

IPC: H01L25/00 ,  H01L23/538 ,  H01L23/498 ,  H01L21/48 ,  H01L25/065

Abstract: Techniques for a patch to couple one or more surface dies to an interposer or motherboard are provided. In an example, the patch can include multiple embedded dies. In an example, a microelectronic device can be formed to include a patch on an interposer, where the patch can include multiple embedded dies and each die can have a different thickness.

公开(公告)号：US20190189563A1

公开(公告)日：2019-06-20

申请号：US16326679

申请日：2016-09-29

Applicant: Intel Corporation

Inventor： Srinivas V. PIETAMBARAM ,  Sri Ranga Sai BOYAPATI ,  Robert A. MAY ,  Kristof DARMAWIKARTA ,  Javier SOTO GONZALEZ ,  Kwangmo LIM

IPC: H01L23/538 ,  H01L23/00

CPC classification number: H01L23/5389 ,  H01L23/00 ,  H01L24/06 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2924/18162

Abstract: A foundation layer and methods of forming a conductive via are described. A die pad is formed over a die. A seed layer is deposited over the die pad and the foundation layer. A first photoresist layer is deposited over the seed layer, and the first layer is patterned to form a conductive line opening over the die pad. A conductive material is deposited into the conductive line opening to form a conductive line. A second photoresist layer is deposited over the first layer, and the second layer is patterned to form a via opening over the conductive line. The conductive material is deposited into the via opening to form the conductive via, where the conductive material only deposits on portions of exposed conductive line. The second and first layers are removed. Portions of exposed seed layer are recessed, and then a top surface of the conductive via is exposed.