公开(公告)号：US20050241584A1

公开(公告)日：2005-11-03

申请号：US10501791

申请日：2003-03-20

申请人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

发明人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

IPC分类号： H05B3/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/687 ,  H05B3/10 ,  H05B3/12 ,  H05B3/14 ,  H05B3/74 ,  C23C16/00

CPC分类号： H01L21/68757 ,  H01L21/67103 ,  H05B3/143

摘要： For semiconductor manufacturing equipment a ceramic susceptor is made available in which by optimizing the inter-wiring-line separation in the resistive heating element, damage due to shorting between resistive heating element lines during heating operations is prevented while wafer-surface temperature uniformity is maintained. The ceramic susceptor (1) for semiconductor manufacturing equipment has a resistive heating element (3a) on a surface of or inside ceramic substrate (2), with the smallest angle θ formed by the bottom and lateral sides of the resistive heating element (3a) In a section of the resistive heating element (3a) being 5° or greater. A plasma electrode may be arranged on a surface of or inside the ceramic substrates (2a) of the ceramic susceptor (1). The ceramic substrates (2a) are preferably made of at least one selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.

摘要翻译： 对于半导体制造设备，可以提供陶瓷感受体，其中通过优化电阻加热元件中的布线间隔离，防止在加热操作期间电阻加热元件线之间短路导致的损坏，同时保持晶片表面温度均匀性。 用于半导体制造设备的陶瓷感受体（1）在陶瓷基板（2）的表面或内部具有电阻加热元件（3a），其中由电阻加热元件（3）的底部和侧面形成的最小的角度θ a）电阻加热元件（3a）的一部分为5°或更大。 等离子体电极可以布置在陶瓷基座（1）的陶瓷基板（2a）的表面上或内部。 陶瓷基板（2a）优选由选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种制成。

公开(公告)号：US20050184055A1

公开(公告)日：2005-08-25

申请号：US10987292

申请日：2004-11-15

申请人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Kenji Shinma

发明人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Kenji Shinma

IPC分类号： H05B3/20 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H05B3/10 ,  H05B3/14 ,  H05B3/28 ,  H05B3/74

CPC分类号： H01L21/67103 ,  H05B3/143

摘要： In a heater member executing a heat process with a heat subject placed thereon, and a heat processor using the same, the power supply is reduced to achieve energy conservation, a damage risk to be caused by the thermal stress is eliminated, and the wiring design flexibility is increased for a heat-generating circuit section. Furthermore, the heat uniformity capability is increased, and the reliability is increased by preventing short-circuit accidents. At least entirely over the surface of a heat-subject-placing surface of a heater substrate 2, a low-radiation-rate film 10 made of a material whose radiation rate is lower than that of the heater substrate 2 is formed. By applying patterning to the low-radiation-rate film 10, the exposure rate of the heater substrate 2 is changed on the heat-subject-placing surface. Specifically, the radiation rate is varied in a manner such that the radiation rate becomes smaller from the center part of the heat-subject-placing surface toward the outer peripheral part thereof.

摘要翻译： 在进行热处理的加热部件中，在加热部件上设置有加热对象的加热器部件和使用该加热部件的热处理器，减少电力供应，实现节能，消除由热应力引起的损害风险， 发热电路部分的灵活性增加。 此外，通过防止短路事故，增加了热均匀性，提高了可靠性。 至少完全在加热器基板2的热对象放置表面的表面上形成由辐射率低于加热器基板2的材料制成的低辐射率膜10。 通过向低辐射率膜10施加图案，加热基板2的曝光率在热对象放置面上发生变化。 具体地说，辐射速率以从热被摄体放置面的中心部朝向其外周部的放射率变小的方式变化。

公开(公告)号：US20050184054A1

公开(公告)日：2005-08-25

申请号：US10501744

申请日：2003-03-20

申请人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

发明人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

IPC分类号： H05B3/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/3065 ,  H05B3/10 ,  H05B3/12 ,  H05B3/14 ,  H05B3/74 ,  H05B3/02

CPC分类号： H01L21/67103 ,  H05B3/143

摘要： Affords ceramic susceptors, for semiconductor manufacturing equipment, in which wafer-surface isothermal quality during heating operations is heightened by enhancing the degree of planarization of the susceptor wafer-carrying face in its high-temperature region where wafers are processed in the course of manufacturing semiconductors. Ceramic susceptor (1) for semiconductor manufacturing equipment has in the surface or interior of ceramic substrates (2a) and (2b) resistive heating element (3), and a non-heating (ordinary-temperature) arched contour in its wafer-carrying face is a concavity of 0.001 to 0.7 mm per 300 mm. A plasma electrode furthermore may be disposed in ceramic susceptor 1, in the surface or interior of ceramic substrates (2a) and (2b). Preferably, moreover, ceramic substrates (2a) and (2b) are at least one ceramic selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.

摘要翻译： 提供用于半导体制造设备的陶瓷感受器，其中在加热操作期间的晶片表面等温质量通过提高在制造半导体的过程中处理晶片的高温区域中的基座晶片承载面的平坦化程度来提高 。 用于半导体制造设备的陶瓷基座（1）在陶瓷基板（2a）和（2b）电阻加热元件（3）的表面或内部，以及在其晶片制造设备中的非加热（常温） 承载面为0.001〜0.7mm / 300mm的凹度。 此外，等离子体电极可以设置在陶瓷基座1中，陶瓷基板（2a）和（2b）的表面或内部。 此外，优选地，陶瓷基板（2a）和（2b）是选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种陶瓷。

公开(公告)号：US20050160988A1

公开(公告)日：2005-07-28

申请号：US11029408

申请日：2005-01-06

申请人： Kenji Shinma ,  Hirohiko Nakata ,  Masuhiro Natsuhara

发明人： Kenji Shinma ,  Hirohiko Nakata ,  Masuhiro Natsuhara

IPC分类号： H01L21/02 ,  C23C16/00 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00

CPC分类号： H01L21/67109 ,  C23C16/4586 ,  C23C16/46

摘要： A semiconductor-producing apparatus increases both the cooling rate of the heater and the uniformity in the temperature distribution of the heater. The semiconductor-producing apparatus of the present invention is provided with a heater for heat-treating a semiconductor wafer and a cooling block for cooling the heater. The cooling block is provided with at least one through hole for inserting a penetrating object. The distance from the inner surface of the or each through hole to the penetrating object is at most 50 mm. The cooling block is arranged such that it can both make contact with and separate from the heater's face opposite to the face for placing the wafer. The foregoing penetrating object is a current-feeding electrode for feeding current to the heater circuit, a temperature-measuring means, or the like.

摘要翻译： 半导体制造装置增加了加热器的冷却速度和加热器的温度分布的均匀性。 本发明的半导体制造装置设置有用于对半导体晶片进行热处理的加热器和用于冷却加热器的冷却块。 冷却块设置有用于插入穿透物体的至少一个通孔。 从该贯通孔的内表面到穿透物的距离为50mm以下。 冷却块被布置成使得其可以与加热器的与面的相反的面接触并与其分离以放置晶片。 上述穿透物体是用于将电流馈送到加热器电路的电流馈送电极，温度测量装置等。

公开(公告)号：US20050028739A1

公开(公告)日：2005-02-10

申请号：US10710841

申请日：2004-08-06

申请人： Masuhiro Natsuhara ,  Hirohiko Nakata

发明人： Masuhiro Natsuhara ,  Hirohiko Nakata

IPC分类号： C23C16/00 ,  C23C16/458 ,  H01L21/68 ,  H01L21/683

CPC分类号： C23C16/4586 ,  C23C16/4581

摘要： According to the present invention, a wafer holder is supported by support pieces mounted on a pedestal and is installed within the processing chamber of a semiconductor manufacturing device, wherein the lift pins are set up anchored to the semiconductor-manufacturing-device chamber and the pedestal is driven vertically, thereby running the wafer holder up/down to thrust the lift pins out from, or retract them into, the top side of the wafer holder, which makes it possible to dechuck wafers from and pocket them into the holder. Consequently, leveling the height of the tip ends of the plurality of lift pins is facilitated and synchronization problems are completely eliminated besides, which thus makes it possible to prevent wafer drop-off during wafer dechucking/pocketing. And since a mechanism for synchronously driving the plural lift pins up/down is unnecessary, the device overall can be made more compact.

摘要翻译： 根据本发明，晶片保持器由安装在基座上的支撑件支撑并安装在半导体制造装置的处理室内，其中提升销被固定在半导体制造装置室和基座 被垂直驱动，从而使晶片保持器上/下移动以将提升销推出或者将其退回到晶片保持器的顶侧，这使得可以将晶片从其中取出并将其包入保持器中。 因此，除了多个提升销的顶端的高度以外，还能够完全消除同步问题，从而可以防止晶片脱胶/贴片期间的晶片脱落。 并且，由于不需要同时驱动多个提升销的机构，因此能够使装置整体更加紧凑。

公开(公告)号：US06716304B2

公开(公告)日：2004-04-06

申请号：US10309402

申请日：2002-12-03

申请人： Akira Kuibira ,  Hirohiko Nakata ,  Kenjiro Higaki ,  Masuhiro Natsuhara ,  Takashi Ishii ,  Yasuyuki Matsui

发明人： Akira Kuibira ,  Hirohiko Nakata ,  Kenjiro Higaki ,  Masuhiro Natsuhara ,  Takashi Ishii ,  Yasuyuki Matsui

IPC分类号： H05H100

CPC分类号： H01L21/6835 ,  C04B37/005 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2237/06 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/066 ,  C04B2237/08 ,  C04B2237/10 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/52 ,  C04B2237/567 ,  C04B2237/62 ,  C04B2237/66 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/80 ,  H01L21/4857 ,  H01L21/67103 ,  C04B41/0072 ,  C04B41/4539 ,  C04B41/4572 ,  C04B41/5133 ,  C04B41/5022 ,  C04B35/581

摘要： A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.

摘要翻译： 用于半导体制造装置的晶片保持器具有高导热性。 晶片保持器包括烧结陶瓷片，可以在烧结陶瓷片的至少一个表面上高精度地形成的加热器电路图案的导电层和形成在烧结陶瓷片上的导电层上的保护层 以覆盖导电层的表面。 保护层可以包含玻璃，诸如氮化铝或氮化硅的非氧化物陶瓷，镱，钕和钙的氧化物，或钇和铝的氧化物。 在制造晶片保持器的方法中，将含有金属颗粒的糊剂施加在烧结陶瓷片的表面上，并且被烧制以形成作为导电层的加热器电路图案。 然后在烧结陶瓷片上形成保护层以覆盖导电层的表面。

公开(公告)号：US06653604B2

公开(公告)日：2003-11-25

申请号：US10119812

申请日：2002-04-09

申请人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Akira Kuibira ,  Kenji Shinma

发明人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Akira Kuibira ,  Kenji Shinma

IPC分类号： H05B368

CPC分类号： H01L21/67103

摘要： In the heater member for mounting an object of heating, at least a part of a surface other than a surface mounting a substrate such as a semiconductor wafer or a substrate for liquid crystal, is mirror-finished. Accordingly, power fed to the heater for heating to a prescribed temperature can be reduced, and thus, a heater member for mounting an object of heating and a substrate processing apparatus using the heater member, that can heat the object with higher efficiency, can be obtained.

摘要翻译： 在用于安装加热对象的加热器构件中，对安装诸如半导体晶片或液晶基板的基板以外的表面的至少一部分进行镜面加工。 因此，可以减少供给到加热器的加热到规定温度的电力，因此，可以使用加热器构件加热加热物体的加热器部件和能够以更高的效率加热物体的加热器部件 获得。

公开(公告)号：US07806984B2

公开(公告)日：2010-10-05

申请号：US10478278

申请日：2003-02-26

申请人： Akira Kuibira ,  Masuhiro Natsuhara ,  Hirohiko Nakata

发明人： Akira Kuibira ,  Masuhiro Natsuhara ,  Hirohiko Nakata

IPC分类号： H01L21/205 ,  C23C16/44

CPC分类号： C23C16/45521 ,  C23C16/4412 ,  C23C16/4581 ,  C23C16/4586 ,  H01L21/68792

摘要： An apparatus for manufacturing a semiconductor or liquid crystal has, within a reaction chamber 1 to which a reactive gas is supplied, a ceramic holder 2 having a resistive heating element 7 embedded therein; and further comprises a ceramic cylindrical support member 3 one end of which supports the ceramic holder 2 and the other end of which is fixed to a portion of the reaction chamber 1, and an inert gas supply tube 4 and inert gas evacuation tube 5 each having an opening inside the cylindrical support member 3. It is preferable that the inert gas within the cylindrical support member 3 be maintained at less than 0.1 MPa (one atmosphere). By means of such an arrangement, oxidation and corrosion of electrodes provided on the rear surface of the ceramic holder can be prevented, without an oxidation-resistant seal or corrosion-resistant seal being applied. The semiconductor or liquid crystal manufacturing apparatus also ensures the thermal uniformity in the ceramic holder and eliminates useless power consumption. Moreover, the apparatus size can be reduced, and manufacturing costs can be decreased.

摘要翻译： 在半导体或液晶的制造装置中，在供给反应性气体的反应室1内嵌有电阻加热元件7的陶瓷保持架2， 并且还包括陶瓷圆柱形支撑构件3，其一端支撑陶瓷保持器2，另一端固定到反应室1的一部分，惰性气体供应管4和惰性气体排出管5各自具有 圆筒状的支承部件3内的开口部。优选将圆筒状支撑部件3内的惰性气体维持在小于0.1MPa（1个大气压）。 通过这种布置，可以防止设置在陶瓷保持器的后表面上的电极的氧化和腐蚀，而不施加抗氧化密封或耐腐蚀密封。 半导体或液晶制造装置还确保陶瓷保持器的热均匀性并消除无用的功耗。 此外，可以减小设备尺寸，并且可以降低制造成本。

公开(公告)号：US20100044364A1

公开(公告)日：2010-02-25

申请号：US12610769

申请日：2009-11-02

申请人： Akira MIKUMO ,  Tomoyuki Awazu ,  Masuhiro Matsuhara ,  Hirohiko Nakata

发明人： Akira MIKUMO ,  Tomoyuki Awazu ,  Masuhiro Matsuhara ,  Hirohiko Nakata

IPC分类号： H05B3/68

CPC分类号： H05B3/265 ,  H01L21/67109

摘要： A heater unit that much improves accuracy in thermal uniformity of an object of heating during cooling, particularly rapid cooling, is provided. The heater unit in accordance with the present invention includes a heater substrate for mounting an object of heating and performing heat treatment thereon, and a cooling module for cooling the heater substrate, and between said heater substrate and the cooling module, an intervening body is arranged. Utilizing deformability of the intervening body, ratio of a non-contact portion can be reduced than when the intervening body is not provided, and temperature uniformity of the heater substrate at the time of cooling can be improved.

摘要翻译： 提供了一种加热器单元，其大大提高了冷却期间加热对象的热均匀性的精度，特别是快速冷却。 根据本发明的加热器单元包括用于安装加热物体并在其上进行热处理的加热器基板，以及用于冷却加热器基板的冷却模块，并且在所述加热器基板和冷却模块之间布置有中间体 。 利用中间体的可变形性，可以比不设置中间体时的非接触部分的比例降低，并且可以提高冷却时的加热器基板的温度均匀性。

公开(公告)号：US07576303B2

公开(公告)日：2009-08-18

申请号：US11701417

申请日：2007-02-02

申请人： Masuhiro Natsuhara ,  Tomoyuki Awazu ,  Hirohiko Nakata ,  Katsuhiro Itakura

发明人： Masuhiro Natsuhara ,  Tomoyuki Awazu ,  Hirohiko Nakata ,  Katsuhiro Itakura

IPC分类号： H05B3/68 ,  C23C16/00

CPC分类号： G01R31/2865 ,  H01L21/68757

摘要： A wafer holder is provided having high rigidity and an enhanced heat-insulating effect that allow positional accuracy and heating uniformity to be improved, a chip to be rapidly heated and cooled, and the manufacturing cost to be reduced, and a wafer prober apparatus on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, a support member for supporting the chuck top, and a stand for supporting the support member. The chuck top has a thermal conductivity K1 and a Young's modulus Y1; the support member has a thermal conductivity K2 and a Young's modulus Y2; and the stand has a thermal conductivity K3 and a Young's modulus Y3. K1>K2 and K1>K3; and Y3>Y1 and Y3>Y2.

摘要翻译： 提供了具有高刚性和增强的隔热效果的晶片保持器，其允许提高位置精度和加热均匀性，快速加热和冷却的芯片，以及降低的制造成本，以及晶片探测器装置，其上 安装晶片保持架。 本发明的晶片保持器包括用于安装晶片的卡盘顶部，用于支撑卡盘顶部的支撑构件和用于支撑支撑构件的支架。 卡盘顶部具有导热系数K1和杨氏模量Y1; 支撑构件具有热传导率K2和杨氏模量Y2; 并且支架具有热导率K3和杨氏模量Y3。 K1> K2和K1> K3; Y3> Y1和Y3> Y2。