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公开(公告)号：US07361230B2
公开(公告)日：2008-04-22
申请号：US10119955
申请日：2002-04-09
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68714 , Y10T279/23
摘要： In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.
摘要翻译： 在基板处理装置中，用于安装基板的陶瓷模块具有具有电路和陶瓷基体的平板部分，并且作为安装基板的表面以外的平板部分的至少一部分表面， 与腔室接触，它由腔室支撑。 因此，可以提供提高热均匀性，降低成本的衬底处理装置，适合于装置的尺寸减小，并且可以减轻安装电源导电构件等的限制。
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公开(公告)号：US20050263516A1
公开(公告)日：2005-12-01
申请号：US11140668
申请日：2005-05-27
IPC分类号： H05B3/20 , F27B17/00 , F27D11/00 , F27D99/00 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/74
CPC分类号： F27D99/0006 , F27B17/0025 , F27D2099/0008 , H01L21/67103
摘要： The present invention provides a heating device which is rigid with little likelihood of warping. The workpiece mounting surface has a high thermal conductivity, and there is improved heat uniformity, and rapid cooling is possible. The heating device of the present invention comprises: a mounting part for mounting the workpiece; a heating part which has a resistance heating element and which heats the mounting part; and a support part which supports the mounting part and heating part. The Young's modulus for each of the mounting part and support part is 100 GPa or greater. By having a Young's modulus of 100 GPa or greater, even if the mounting part is thin, there is little deformation when pressed by a probe card.
摘要翻译： 本发明提供一种加热装置，该加热装置具有几乎不变形的刚性。 工件安装面具有高导热性，并且具有改善的热均匀性，并且可以进行快速冷却。 本发明的加热装置包括：用于安装工件的安装部件; 加热部，其具有电阻加热元件，并加热所述安装部; 以及支撑安装部和加热部的支撑部。 每个安装部分和支撑部分的杨氏模量为100GPa或更大。 通过具有100GPa以上的杨氏模量，即使安装部分较薄，当由探针卡按压时几乎没有变形。
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公开(公告)号：US07306858B2
公开(公告)日：2007-12-11
申请号：US11198009
申请日：2005-08-04
IPC分类号： B32B9/00
CPC分类号： C04B35/581 , C04B35/62655 , C04B35/645 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/608 , C04B2235/6584 , C04B2235/668 , C04B2235/72 , C04B2235/724 , C04B2235/963 , C04B2235/9692 , Y10T428/12736
摘要： In an aluminum nitride sintered body, the bismuth and chlorine contents are restricted to be no more than fixed amounts. More specifically, in an aluminum nitride sintered body having aluminum nitride as its main component, the bismuth content in the aluminum nitride sintered body is no more than 30 ppm and the chlorine content is no more than 100 ppm. It would be preferable to form a resistance heating body on the aluminum nitride sintered body, and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating part.
摘要翻译： 在氮化铝烧结体中，铋和氯的含量被限定为不大于固定量。 更具体地说，在以氮化铝为主要成分的氮化铝烧结体中，氮化铝烧结体中的铋含量为30ppm以下，氯含量为100ppm以下。 优选在氮化铝烧结体上形成电阻加热体，优选将氮化铝烧结体用作半导体加热部。
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公开(公告)号：US20050178334A1
公开(公告)日：2005-08-18
申请号：US10906325
申请日：2005-02-15
IPC分类号： H05B3/20 , C23C14/50 , C23C16/00 , C23C16/458 , H01L21/02 , H01L21/205 , H01L21/3065 , H01L21/68 , H01L21/683 , H05B3/00 , H05B3/10 , H05B3/74
CPC分类号： C23C16/4585 , C23C14/50 , C23C16/4581
摘要： Affords a susceptor unit in which the temperature uniformity of the susceptor baseplate is enhanced, and devices in which such a susceptor unit is installed. The susceptor unit is made up of a susceptor baseplate for carrying an object to be heated and performing heating operations on the object, and a containment for shielding the susceptor baseplate. In this susceptor unit, the shielding containment shields at least the surface of the susceptor baseplate that forms a lateral side with respect to the baseplate's heated-object-carrying face; and the difference between the maximum and the minimum separations in the encompassing interval between the lateral side of the susceptor baseplate and, facing onto the baseplate lateral side, the inside surface of the shielding containment is not more than 2.2 mm. In implementations including a cooling block, the shielding extends over the lateral side of the cooling block as well.
摘要翻译： 提供一种感受器单元，其中感受器基板的温度均匀性得到增强，以及安装这种感受器单元的装置。 基座单元由用于承载待加热物体的基座基座和对物体进行加热操作以及用于屏蔽基座基板的容纳物构成。 在该感受器单元中，屏蔽容纳物至少屏蔽基座底板的相对于底板加热物体承载面形成侧面的表面; 并且基座基板的侧面与屏障侧面的基板侧面之间的包围间隔中的最大和最小间隔之间的差异不大于2.2mm。 在包括冷却块的实施方案中，屏蔽也在冷却块的侧面上延伸。
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公开(公告)号：US20080083732A1
公开(公告)日：2008-04-10
申请号：US11544636
申请日：2006-10-10
CPC分类号： H01L21/67103 , H01L21/67109
摘要： The present invention is a wafer holder including a heating plate 2 equipped with heating means such as a film-form/foil-form heat generating body 9 or the like, a cooling plate 3 equipped with cooling means such as a coolant passage 7 or the like, and temperature measurement means 4, wherein the heating plate 2 and cooling plate 3 are layered in a direction perpendicular to the wafer placement surface. The heating plate 2 is preferably disposed closer to the wafer placement surface than the cooling plate 3, and a heat conducting member 8 is disposed between the heating plate 2 and cooling plate 3.
摘要翻译： 本发明是一种晶片保持器，其包括装有诸如薄膜/箔形发热体9等加热装置的加热板2，具有冷却装置如冷却剂通道7的冷却板3或 和温度测量装置4，其中加热板2和冷却板3在垂直于晶片放置表面的方向上层叠。 加热板2优选地设置成比冷却板3更靠近晶片放置表面，并且在加热板2和冷却板3之间设置导热部件8。
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公开(公告)号：US07279048B2
公开(公告)日：2007-10-09
申请号：US10987304
申请日：2004-11-15
IPC分类号： G01R31/02 , H01L21/68 , C23C16/00 , C23C16/458
CPC分类号： C23C16/4586 , H01L21/67109
摘要： To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the time period for treating a semiconductor wafer.The wafer holder includes the heater 1 for carrying the semiconductor wafer thereon to heat the same, and the cooling block 2 for cooling the heater 1. The cooling block 2 is arranged so as to come into and out of abutment against the back 1b of the heater on the side opposed to the wafer carrying face 1a, and its abutment face 2a to abut against the heater 1 has a warpage of 1 mm or less. The cooling block 2 can be provided therein with a passage for a cooling liquid. It is preferred that the passage has a sectional area of 1 mm2 or larger over 80% of its entire length, and that the area of the portion having the passage formed is 3% or larger of the entire area of the abutment face 2a.
摘要翻译： 为了提供一种半导体制造装置，其具有能够提高加热器的冷却速度的晶片保持器，并且保持加热器在冷却时的温度分布的均匀性，并且可以显着缩短处理半导体晶片的时间段 。 晶片保持器包括用于在其上承载半导体晶片以加热其的加热器1和用于冷却加热器1的冷却块2。 冷却块2被布置成在与晶片承载面1a相对的一侧进入和离开加热器的背面1b，并且其抵靠加热器1的邻接面2a具有翘曲 为1mm以下。 冷却块2可以在其中设置有用于冷却液体的通道。 优选的是，通道的截面面积为其整个长度的80％以上的1mm 2以上，并且具有通路形状的部分的面积为整体的3％以上 邻接面2a的区域。
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公开(公告)号：US20060035107A1
公开(公告)日：2006-02-16
申请号：US11198009
申请日：2005-08-04
IPC分类号： B32B15/01
CPC分类号： C04B35/581 , C04B35/62655 , C04B35/645 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/608 , C04B2235/6584 , C04B2235/668 , C04B2235/72 , C04B2235/724 , C04B2235/963 , C04B2235/9692 , Y10T428/12736
摘要： In an aluminum nitride sintered body, the bismuth and chlorine contents are restricted to be no more than fixed amounts. More specifically, in an aluminum nitride sintered body having aluminum nitride as its main component, the bismuth content in the aluminum nitride sintered body is no more than 30 ppm and the chlorine content is no more than 100 ppm. It would be preferable to form a resistance heating body on the aluminum nitride sintered body, and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating part.
摘要翻译： 在氮化铝烧结体中，铋和氯的含量被限定为不大于固定量。 更具体地说，在以氮化铝为主要成分的氮化铝烧结体中，氮化铝烧结体中的铋含量不超过30ppm，氯含量不大于100ppm。 优选在氮化铝烧结体上形成电阻加热体，优选将氮化铝烧结体用作半导体加热部。
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公开(公告)号：US20050170651A1
公开(公告)日：2005-08-04
申请号：US10987304
申请日：2004-11-15
IPC分类号： H05B3/10 , C23C16/458 , H01L21/00 , H01L21/027 , H01L21/205 , H01L21/302 , H01L21/461 , H01L21/68 , H01L21/683 , H05B3/74
CPC分类号： C23C16/4586 , H01L21/67109
摘要： To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the time period for treating a semiconductor wafer. The wafer holder includes the heater 1 for carrying the semiconductor wafer thereon to heat the same, and the cooling block 2 for cooling the heater 1. The cooling block 2 is arranged so as to come into and out of abutment against the back 1b of the heater on the side opposed to the wafer carrying face 1a, and its abutment face 2a to abut against the heater 1 has a warpage of 1 mm or less. The cooling block 2 can be provided therein with a passage for a cooling liquid. It is preferred that the passage has a sectional area of 1 mm2 or larger over 80% of its entire length, and that the area of the portion having the passage formed is 3% or larger of the entire area of the abutment face 2a.
摘要翻译： 为了提供一种半导体制造装置，其具有能够提高加热器的冷却速度的晶片保持器，并且保持加热器的冷却时间的温度分布的均匀性，并且可以显着缩短处理半导体晶片的时间周期 。 晶片保持器包括用于在其上承载半导体晶片以加热其的加热器1和用于冷却加热器1的冷却块2。 冷却块2被布置成在与晶片承载面1a相对的一侧进入和离开加热器的背面1b，并且其抵靠加热器1的邻接面2a具有翘曲 为1mm以下。 冷却块2可以在其中设置有用于冷却液体的通道。 优选的是，通道的截面面积为其整个长度的80％以上的1mm 2以上，并且具有通路形状的部分的面积为整体的3％以上 邻接面2a的区域。
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9.发明申请WAFER HOLDER, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开滤波器及其制造方法及半导体制造设备公开(公告)号：US20090283034A1
公开(公告)日：2009-11-19
申请号：US11996728
申请日：2007-05-21
CPC分类号： H01L21/67109 , C23C16/4586 , H01L21/6831 , H01L21/68757
摘要： A wafer holder is provided that can be used in wafer processes at room temperature or lower and that is particularly suited for use in a CVD apparatus.The wafer holder 1 has a wafer-mounting surface. The wafer holder 1 is made of ceramic and has a flow channel 3 that allows coolant to flow to the interior of the wafer holder in order to cool the wafer holder 1, and is furthermore preferably provided with a high-frequency generating electrode 2. The wafer holder 1 can be manufactured having a flow channel 3 formed in one of the ceramic substrates, at least another ceramic substrate is joined to the ceramic substrate so as to cover the flow channel 3, and a ceramic plate in which a high-frequency generating electrode 2 is formed is preferably additionally joined to the other substrates.
摘要翻译： 提供了可以在室温或更低的晶片工艺中使用并且特别适用于CVD设备的晶片保持器。 晶片保持架1具有晶片安装面。 晶片保持器1由陶瓷制成，并且具有允许冷却剂流向晶片保持器内部以便冷却晶片保持器1的流动通道3，并且还优选地设置有高频发生电极2。 可以制造具有形成在一个陶瓷基板中的流路3的晶片保持架1，至少另一陶瓷基板与陶瓷基板接合以覆盖流路3，陶瓷基板的高频发生 形成的电极2优选地另外连接到其它基板。
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公开(公告)号：US07342204B2
公开(公告)日：2008-03-11
申请号：US10987292
申请日：2004-11-15
CPC分类号： H01L21/67103 , H05B3/143
摘要： A low-radiation-rate film, made of a material whose radiation rate is lower than that of a heater substrate, is formed at least entirely over the surface of a heat-subject-placing surface of a heater substrate. By applying patterning to the low-radiation-rate film, the exposure rate of the heater substrate is varied such that the radiation rate becomes smaller from the center part of the heat-subject-placing surface toward the outer peripheral part thereof, thereby enabling a uniform temperature across the surface. In addition, the power supply is reduced, thermal stress is eliminated, the wiring design flexibility is increased, and the reliability is increased by preventing short-circuit accidents.
摘要翻译： 由放射率低于加热器基板的材料制成的低辐射率膜至少整个地形成在加热器基板的热对象放置表面的表面上。 通过向低辐射率膜施加图案化，加热器基板的曝光率变化，使得辐射率从热被摄体放置表面的中心部分朝向其外周部分变小，从而能够 整个表面温度均匀。 此外，电源减少，热应力消除，布线设计灵活性提高，通过防止短路事故提高可靠性。
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