公开(公告)号：US06509269B2

公开(公告)日：2003-01-21

申请号：US09421452

申请日：1999-10-19

申请人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

发明人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

IPC分类号： H01L21302

CPC分类号： B24B37/0056 ,  B24B37/044 ,  B24B53/017 ,  H01L21/3212

摘要： Polishing pad glazing during CMP of Al and Al alloys is eliminated or substantially reduced by utilizing a neutral polishing slurry containing a sufficient amount of a surfactant to prevent agglomeration of the abrasive particles with polishing by-products. Embodiments include CMP an Al or an Al alloy surface employing a slurry containing abrasive Al203 particles and about 0.02 to about 5 wt. % of a surfactant to prevent Al203 abrasive slurry particles from agglomerating with Al(OH)3 polishing by-products. Embodiments further include subsequent ex situ pad conditioning using an acid or base to dissolve, or a complexing agent to remove, Al(OH)3 polishing by-products.

摘要翻译： 通过利用含有足够量的表面活性剂的中性抛光浆料来消除或大大减少Al和Al合金的CMP期间的抛光垫玻璃，以防止磨料颗粒与抛光副产物团聚。 实施方案包括使用含有磨料Al 2 O 3颗粒和约0.02至约5重量％的浆料的CMP或Al合金表面。 ％的表面活性剂，以防止Al2O3磨料浆料颗粒与Al（OH）3抛光副产物附聚。 实施例还包括使用酸或碱溶解的随后的非原位垫调节剂或用于去除Al（OH）3抛光副产物的络合剂。

公开(公告)号：US06451697B1

公开(公告)日：2002-09-17

申请号：US09544281

申请日：2000-04-06

申请人： Lizhong Sun ,  Shijian Li ,  Fritz Redeker

发明人： Lizhong Sun ,  Shijian Li ,  Fritz Redeker

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  C09G1/00

摘要： Metal CMP with reduced dishing and overpolish insensitivity is achieved with an abrasive-free polishing composition having a pH and oxidation-reduction potential in the domain of passivation of the metal and, therefore, a low static etching rate at high temperatures, e.g., higher than 50° C. Embodiments of the present invention comprise CMP of Cu film without any abrasive using a composition comprising one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, one or more agents to achieve a pH of about 3 to about 10 and deionized water.

摘要翻译： 具有减少的凹陷和过度不敏感性的金属CMP通过在金属钝化领域具有pH和氧化还原电位的无磨料抛光组合物实现，因此在高温下具有低的静态蚀刻速率，例如高于 本发明的实施方案包括使用包含一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂，一种或多种pH达3〜 约10和去离子水。

公开(公告)号：US06396357B1

公开(公告)日：2002-05-28

申请号：US09562305

申请日：2000-05-01

申请人： Lizhong Sun ,  Dale Nelson

发明人： Lizhong Sun ,  Dale Nelson

IPC分类号： H03B524

CPC分类号： H03K3/0315 ,  H03K3/354

摘要： A ring oscillator including a voltage-to-current converter for producing at least one control current from at least one control voltage and, a plurality of delay cells coupled to the converter, wherein at least one output of the one of the delay cells is coupled to the input of another of the delay cells, wherein the voltage-to-current converter produces a substantially linear output when the at least one control voltage is varied between zero volts and a rail supply voltage. Since the ring oscillator operates from a low voltage source, it can be used in applications where power supply (e.g., battery size) is small (e.g., pagers, cellular phone applications).

摘要翻译： 一种环形振荡器，包括用于从至少一个控制电压产生至少一个控制电流的电压 - 电流转换器，以及耦合到转换器的多个延迟单元，其中所述一个延迟单元的至少一个输出耦合 到另一个延迟单元的输入，其中当至少一个控制电压在零伏特和轨道电源电压之间变化时，电压 - 电流转换器产生基本上线性的输出。 由于环形振荡器由低电压源工作，因此可用于电源（例如，电池尺寸）小（例如，寻呼机，蜂窝电话应用）的应用中。

公开(公告)号：US6074546A

公开(公告)日：2000-06-13

申请号：US915775

申请日：1997-08-21

申请人： Lizhong Sun ,  James Shen ,  Lee Melbourne Cook

发明人： Lizhong Sun ,  James Shen ,  Lee Melbourne Cook

IPC分类号： C25F3/30 ,  H01L21/3063 ,  B23H3/00 ,  B23H5/00 ,  C25F3/00 ,  C25F7/00

CPC分类号： C25F3/30 ,  H01L21/3063

摘要： A method is provided for photochemical polishing of a silicon wafer using electromagnetic waves within the spectrum of 150 to 2000 nanometers wavelength. A photochemical polishing apparatus is also disclosed in which the electromagnetic waves are provided by a waveguide in close proximity to the surface of a silicon wafer electrode.

摘要翻译： 提供了一种使用150-2000纳米波长范围内的电磁波对硅晶片进行光化学抛光的方法。 还公开了一种光化学抛光装置，其中电磁波由靠近硅晶片电极表面的波导提供。