公开(公告)号：US5924058A

公开(公告)日：1999-07-13

申请号：US800863

申请日：1997-02-14

申请人： Ann P. Waldhauer ,  David K. Carlson ,  Paul B. Comita

发明人： Ann P. Waldhauer ,  David K. Carlson ,  Paul B. Comita

IPC分类号： G01B11/06 ,  G01N21/27 ,  H01L21/66 ,  H01L21/68 ,  H01L23/544 ,  G01R31/265

CPC分类号： H01L22/34 ,  H01L21/6835 ,  H01L22/20 ,  H01L22/12 ,  H01L2924/30105

摘要： A method and apparatus for measuring a reference sample in order to collect a reference characteristic, without moving the reference sample, is disclosed. In one embodiment, the method of the present invention comprises the following steps. An operator places a cassette of unprocessed wafers into a processing chamber of a processing tool that also includes a holding chamber. While the wafers are being processed, the holding chamber, which is coupled to a measurement tool, measures the reference sample that is mounted on a stage in the holding chamber. The resulting reference characteristic value (e.g., spectrum to determine film thickness) is then stored in the measurement tool's computer system. After a film is grown/formed on the wafers, the processed wafers are moved one by one into the holding chamber to be measured. A first wafer is placed on the stage in the holding chamber and a characteristic value for the first processed wafer is obtained using the measurement tool. The computer system of the measurement tool uses an algorithm to compare the reference characteristic value to the first wafer characteristic value to obtain a first differential value. The first differential value is then used to help determine the characteristic (e.g., film thickness) of the film formed on the first processed wafer. In another embodiment, a similar process is followed to measure another characteristic of a wafer, such as resistivity. These examples are illustrative and not limiting. Thus, the present invention can be used whenever a reference sample is to be measured to help determine a selected characteristic of a substrate or wafer.

摘要翻译： 公开了一种用于测量参考样本以便收集参考特征而不移动参考样本的方法和装置。 在一个实施例中，本发明的方法包括以下步骤。 操作者将未处理的晶片盒放置在还包括保持室的处理工具的处理室中。 当正在处理晶片时，耦合到测量工具的保持室测量安装在保持室中的台上的参考样品。 然后将所得到的参考特征值（例如，用于确定膜厚度的光谱）存储在测量工具的计算机系统中。 在薄片生长/形成在晶片上之后，将经处理的晶片一个接一个地移动到要测量的保持室中。 将第一晶片放置在保持室中的台上，并使用测量工具获得第一处理晶片的特征值。 测量工具的计算机系统使用算法​​将参考特征值与第一晶片特征值进行比较，以获得第一差分值。 然后使用第一微分值来确定形成在第一处理晶片上的膜的特性（例如，膜厚度）。 在另一个实施例中，遵循类似的过程来测量晶片的另一特性，例如电阻率。 这些实施例是说明性的而不是限制性的。 因此，每当要测量参考样品以帮助确定衬底或晶片的选定特性时，可以使用本发明。

公开(公告)号：US5421957A

公开(公告)日：1995-06-06

申请号：US100582

申请日：1993-07-30

申请人： David K. Carlson ,  H. Peter W. Hey ,  James C. Hann

发明人： David K. Carlson ,  H. Peter W. Hey ,  James C. Hann

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  B44C1/22

CPC分类号： C23C16/4405

摘要： An improved method of etching or cleaning a cold-wall chemical vapor deposition chamber that is substantially moisture-free at a low chamber temperature and a low chamber pressure while maintaining a satisfactory etch rate by using at least one etchant gas selected from the group consisting of nitrogen trifluoride, chlorine trifluoride, sulfur hexafluoride, carbon tetrafluoride or the like and mixtures thereof.

摘要翻译： 一种蚀刻或清洁冷壁化学气相沉积室的改进方法，其在低室温度和低室压力下基本上不含湿气，同时通过使用至少一种蚀刻剂气体来保持令人满意的蚀刻速率，所述蚀刻剂气体选自 三氟化氮，三氟化氯，六氟化硫，四氟化碳等，以及它们的混合物。

公开(公告)号：US5374159A

公开(公告)日：1994-12-20

申请号：US44919

申请日：1993-04-08

申请人： David W. Severns ,  Brian Tompson ,  Paul R. Lindstrom ,  David K. Carlson

发明人： David W. Severns ,  Brian Tompson ,  Paul R. Lindstrom ,  David K. Carlson

IPC分类号： H01L21/205 ,  C23C16/54 ,  C30B25/02 ,  C30B35/00 ,  H01L21/673 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68764 ,  C23C16/4401 ,  C23C16/54 ,  C30B25/02 ,  C30B35/005 ,  H01L21/68707 ,  H01L21/68771

摘要： A susceptor carrying semiconductor wafers for processing is suspended from a compliant attachment at its upper end and is lowered into a reaction chamber for processing. At the completion of processing, the susceptor is withdrawn vertically to permit a robot to unload the processed wafers and load unprocessed wafers. In order to fix the position of the susceptor during the loading operations, a support carriage is moved into position to engage the lower end of the susceptor. Noxious and corrosive chloride vapors are simultaneously withdrawn from the reaction chamber by a vacuum line attached to the support carriage.

摘要翻译： 携带用于处理的半导体晶片的感受体在其上端从柔性附件悬挂下来并进入用于处理的反应室。 在处理完成时，基座垂直取出以允许机器人卸载经处理的晶片并加载未处理的晶片。 为了在装载操作期间固定基座的位置，支撑托架被移动到位置以接合基座的下端。 有毒和腐蚀性的氯化物蒸汽通过连接到支撑架的真空管线同时从反应室中排出。