公开(公告)号：US20190250334A9

公开(公告)日：2019-08-15

申请号：US15945370

申请日：2018-04-04

Applicant: Luxtera, Inc.

Inventor： Roman Bruck ,  Attila Mekis

IPC: G02B6/293 ,  H04J14/00 ,  H04B10/2581

Abstract: Methods and systems for mode converters for grating couplers may include a photonic chip comprising a waveguide, a grating coupler, and a mode converter, with the waveguide being coupled to the grating coupler via the mode converter. The mode converter may include waveguide material and tapers defined by tapered regions, where the tapered regions do not have waveguide material. The photonic chip may receive an optical signal in the mode converter from the waveguide, where the received optical signal has a light profile that may be spatially deflected in the mode converter to configure a desired profile in the grating coupler. A long axis of the tapers may be parallel to a direction of travel of the optical signal. The long axis of the tapers may point towards the input waveguide of the grating couplers, which may be linear.

公开(公告)号：US10361790B2

公开(公告)日：2019-07-23

申请号：US16036447

申请日：2018-07-16

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

公开(公告)号：US10338308B2

公开(公告)日：2019-07-02

申请号：US16180725

申请日：2018-11-05

Applicant: Luxtera, Inc.

Inventor： Brian Welch ,  Attila Mekis ,  Steffen Gloeckner

IPC: H04J14/00 ,  H04J14/02 ,  G02B6/12 ,  G02B6/42 ,  H04B10/80 ,  H04B10/40 ,  G02B6/293 ,  G02B6/125 ,  G02B6/124

Abstract: Methods and systems for partial integration of wavelength division multiplexing and bi-directional solutions are disclosed and may include, an optical transceiver on a silicon photonics integrated circuit coupled to a planar lightwave circuit (PLC). The silicon photonics integrated circuit may include a first modulator and first light source that operates at a first wavelength and a second modulator and second light source that operates at a second wavelength. The transceiver and PLC are operable to modulate a first continuous wave (CW) optical signal from the first light source utilizing the first modulator and modulate a second CW optical signal from the second light source utilizing the second modulator. The modulated signals may be communicated from the modulators to the PLC utilizing a first pair of grating couplers in the IC and combined in the PLC.

公开(公告)号：US20190154916A1

公开(公告)日：2019-05-23

申请号：US16253000

申请日：2019-01-21

Applicant: Luxtera, Inc.

Inventor： Thierry Pinguet ,  Attila Mekis ,  Steffen Gloeckner

IPC: G02B6/124 ,  G01J1/04 ,  G02B6/34 ,  G02B6/12 ,  G01J1/02 ,  G02B6/42 ,  G02B6/30

CPC classification number: G02B6/124 ,  G01J1/02 ,  G01J1/0425 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4208 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12157

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

公开(公告)号：US20190113823A1

公开(公告)日：2019-04-18

申请号：US16206755

申请日：2018-11-30

Applicant: Luxtera, Inc.

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02F1/225 ,  G02F1/025

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.

公开(公告)号：US10236996B2

公开(公告)日：2019-03-19

申请号：US15950876

申请日：2018-04-11

Applicant: Luxtera, Inc.

Inventor： Peter De Dobbelaere ,  Attila Mekis ,  Gianlorenzo Masini

IPC: G02B6/34 ,  H04B10/80 ,  G02B6/42 ,  G02B6/122

Abstract: Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an integrated optical communication system including CMOS electronics die coupled to a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between two of the plurality of reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary. A continuous wave (CW) optical signal may be received in a first of the reticle sections from an optical source external to the interposer. The CW optical signal may be received in the interposer from an optical source assembly coupled to a grating coupler in the first of the reticle sections in the silicon photonic interposer.

公开(公告)号：US10236985B2

公开(公告)日：2019-03-19

申请号：US15907613

申请日：2018-02-28

Applicant: Luxtera, Inc.

Inventor： Attila Mekis ,  Peter De Dobbelaere ,  Lieven Verslegers ,  Peng Sun ,  Yannick De Koninck

IPC: H04B10/40 ,  H04B10/50 ,  H04J14/02

Abstract: Methods and systems for silicon photonics wavelength division multiplexing transceivers are disclosed and may include, in a transceiver integrated in a silicon photonics chip: generating a first modulated output optical signal at a first wavelength utilizing a first electrical signal, generating a second modulated output optical signal at a second wavelength utilizing a second electrical signal, communicating the first and second modulated output optical signals into an optical fiber coupled to the chip utilizing a multiplexing grating coupler in the chip. A received input optical signal may be split into a modulated input optical signal at the first wavelength and a modulated input optical signal at the second wavelength utilizing a demultiplexing grating coupler in the chip. The first and second modulated input optical signals may be converted to first and second electrical input signals utilizing first and second photodetectors in the chip.

公开(公告)号：US10209540B2

公开(公告)日：2019-02-19

申请号：US16036409

申请日：2018-07-16

Applicant: Luxtera, Inc.

Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

IPC: G02F1/025 ,  G02F1/225 ,  G02F1/21

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

公开(公告)号：US10185086B2

公开(公告)日：2019-01-22

申请号：US15901483

申请日：2018-02-21

Applicant: Luxtera, Inc.

Inventor： Thierry Pinguet ,  Attila Mekis ,  Steffen Gloeckner

IPC: G02B6/34 ,  G02B6/124 ,  G02B6/30 ,  G01J1/02 ,  G01J1/04 ,  G02B6/42 ,  G02B6/12

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

公开(公告)号：US20180321521A1

公开(公告)日：2018-11-08

申请号：US16036409

申请日：2018-07-16

Applicant: Luxtera, Inc.

Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

IPC: G02F1/025 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/06 ,  G02F2202/105

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.