公开(公告)号：US5597741A

公开(公告)日：1997-01-28

申请号：US390548

申请日：1995-02-17

申请人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

发明人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

IPC分类号： H01L21/20 ,  H01L21/225 ,  H01L21/285 ,  H01L21/3215 ,  H01L21/266

CPC分类号： H01L21/32155 ,  H01L21/2022 ,  H01L21/2257 ,  H01L21/28525 ,  Y10S148/123 ,  Y10S438/923

摘要： A process for preparing a semiconductor device, in which a polycrystalline silicon film is formed on a monocrystalline semiconductor substrate and arsenic or phosphorus is injected as an impurity into the polycrystalline silicon film by an ion-injection method to make the polycrystalline silicon film an amorphous layer. The amorphous layer is heat-treated at a temperature of 600.degree. C. to 650.degree. C. to recrystallize the amorphous layer, thus forming a recrystallized layer having a grain size greater than that of the polycrystalline silicon film by solid phase growth. The recrystallized layer is heat-treated at a temperature of 800.degree. C. to 900.degree. C. to diffuse the impurity into the monocrystalline semiconductor substrate.

摘要翻译： 一种制备半导体器件的方法，其中在单晶半导体衬底上形成多晶硅膜，并且通过离子注入法将砷或磷作为杂质注入多晶硅膜中，以使多晶硅膜成为非晶层 。 在600〜650℃的温度下对非晶层进行热处理，使非晶质层重结晶，通过固相生长形成晶粒尺寸大于多晶硅膜的再结晶层。 在800〜900℃的温度下对再结晶层进行热处理，将杂质扩散到单晶半导体衬底中。

公开(公告)号：US5302855A

公开(公告)日：1994-04-12

申请号：US757480

申请日：1991-09-10

申请人： Shigeyuki Matsumoto ,  Masaru Sakamoto ,  Yoshio Nakamura

发明人： Shigeyuki Matsumoto ,  Masaru Sakamoto ,  Yoshio Nakamura

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L23/48 ,  H01L29/44

CPC分类号： H01L23/53223 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/485 ,  H01L2924/0002

摘要： A semiconductor device and a manufacture method for the semiconductor device, the method comprising the steps of forming an insulating film on the surface of a semiconductor substrate, forming contact holes in the insulating layer to expose the surface of the semiconductor substrate, selectively depositing a metal film, which contains aluminum as a main ingredient, on the exposed surface to form an electrodes in each the contact hole, and forming a wiring made of a second metal, which contains as a principal ingredient an element other than aluminum, on both the insulating layer and the electrode. Preferably, the upper surface of each electrode is substantially flat in a connecting portion between the electrode and the wiring, and a relationship of A.gtoreq.C is established where A is a length of one side of the electrode's upper surface and C is a width of the wiring in the connecting portion therebetween. The metal film is produced at a high deposition rate and a high throughput while ensuring good reliability and presenting superior film characteristics such as step coverage and electro migration.

摘要翻译： 一种半导体器件的半导体器件和制造方法，所述方法包括以下步骤：在半导体衬底的表面上形成绝缘膜，在所述绝缘层中形成接触孔以暴露所述半导体衬底的表面，选择性地沉积金属 在暴露的表面上形成在每个接触孔中的电极的膜，并且形成由第二金属制成的布线，该第二金属作为主要成分包含除了铝之外的元素，在绝缘 层和电极。 优选地，每个电极的上表面在电极和布线之间的连接部分中基本平坦，并且建立A> = C的关系，其中A是电极上表面的一侧的长度，C是宽度 在其间的连接部分中的布线。 金属膜以高沉积速率和高产量生产，同时确保良好的可靠性并呈现出优异的薄膜特性，如台阶覆盖和电迁移。