公开(公告)号：US5476799A

公开(公告)日：1995-12-19

申请号：US67788

申请日：1993-05-27

申请人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

发明人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

IPC分类号： H01L21/20 ,  H01L21/225 ,  H01L21/285 ,  H01L21/3215 ,  H01L21/22

CPC分类号： H01L21/32155 ,  H01L21/2022 ,  H01L21/2257 ,  H01L21/28525 ,  Y10S148/123 ,  Y10S438/923

摘要： A process for preparing a semiconductor device forms an insulating thin film capable of tunnelling phenomenon of carriers on a semiconductor substrate and forms a polycrystalline semiconductor layer on the thin film. An impurity is injected to the surface of the polycrystalline semiconductor layer, the diffusion coefficient to the thin film being smaller than that to the polycrystalline semiconductor layer. The process effects a first heat treatment at a temperature of 800.degree. C. or less to diffuse the impurity injected into the polycrystalline semiconductor layer in the polycrystalline semiconductor layer, thereby forming a uniform or substantially uniform impurity containing region at least at the thin film side of the polycrystalline semiconductor layer, and, effects a second heat treatment the temperature of which is 950.degree. C. or less and higher than the temperature of the first heat treatment to diffuse the impurity present in the polycrystalline semiconductor layer into the semiconductor substrate through the thin film, thereby forming a diffused layer.

摘要翻译： 制备半导体器件的方法形成能够在半导体衬底上具有载流子隧道现象的绝缘薄膜，并在薄膜上形成多晶半导体层。 向多晶半导体层的表面注入杂质，对薄膜的扩散系数小于多晶半导体层的扩散系数。 该处理在800℃以下的温度下进行第一次热处理，以使在多晶半导体层中注入多晶半导体层的杂质扩散，至少在薄膜侧形成均匀或基本上均匀的含杂质区域 的多晶半导体层，并且进行第二热处理，其温度为950℃以下且高于第一热处理的温度，以将存在于多晶半导体层中的杂质扩散到半导体衬底中，通过 薄膜，从而形成扩散层。

公开(公告)号：US5242858A

公开(公告)日：1993-09-07

申请号：US755452

申请日：1991-09-05

申请人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

发明人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

IPC分类号： H01L21/20 ,  H01L21/225 ,  H01L21/285 ,  H01L21/3215

CPC分类号： H01L21/32155 ,  H01L21/2022 ,  H01L21/2257 ,  H01L21/28525 ,  Y10S148/123 ,  Y10S438/923

摘要： A process for preparing a semiconductor device comprises exposing at least a part of the main surface of a semiconductor substrate, forming a layer comprising the same main component as the above substrate, forming a flattening agent layer on the surface of said layer, removing the above layer and the flattening agent layer at the same time and injecting an impurity after said removing step.

摘要翻译： 一种制备半导体器件的方法，包括使半导体衬底的主表面的至少一部分暴露，形成与上述衬底相同的主要成分的层，在所述层的表面上形成平坦化剂层，除去上述 层和平坦化剂层，并在所述除去步骤之后注入杂质。

公开(公告)号：US5739590A

公开(公告)日：1998-04-14

申请号：US457149

申请日：1995-06-01

申请人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

发明人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

IPC分类号： H01L21/20 ,  H01L21/225 ,  H01L21/285 ,  H01L21/3215 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/32155 ,  H01L21/2022 ,  H01L21/2257 ,  H01L21/28525 ,  Y10S148/123 ,  Y10S438/923

摘要： A semiconductor device is constructed to have an insulating layer containing an impurity provided upon a semiconductor substrate. This insulating layer contains a plurality of windows of different sizes. A first layer is provided in the windows. This first layer does not extend over a periphery of the windows to the surface of the insulating layer. Further, this semiconductor device is constructed such that the surface of the insulating layer and the first layer opposite the semiconductor substrate are flat. In addition, the semiconductor substrate in contact with the first layer also contains the impurity. The semiconductor device, having less surface unevenness that a conventional device, provides both improved and greater stability of device properties.

摘要翻译： 半导体器件被构造成具有包含设置在半导体衬底上的杂质的绝缘层。 该绝缘层包含多个不同尺寸的窗口。 在窗口中提供第一层。 该第一层不延伸到窗户的周边至绝缘层的表面。 此外，该半导体器件被构造成使得绝缘层的表面和与半导体衬底相对的第一层的表面是平坦的。 此外，与第一层接触的半导体衬底还含有杂质。 具有较少表面不均匀性的半导体器件，传统器件提供了改进的和更高的器件性能的稳定性。

公开(公告)号：US5597741A

公开(公告)日：1997-01-28

申请号：US390548

申请日：1995-02-17

申请人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

发明人： Masaru Sakamoto ,  Masakazu Morishita ,  Shigeru Nishimura

IPC分类号： H01L21/20 ,  H01L21/225 ,  H01L21/285 ,  H01L21/3215 ,  H01L21/266

CPC分类号： H01L21/32155 ,  H01L21/2022 ,  H01L21/2257 ,  H01L21/28525 ,  Y10S148/123 ,  Y10S438/923

摘要： A process for preparing a semiconductor device, in which a polycrystalline silicon film is formed on a monocrystalline semiconductor substrate and arsenic or phosphorus is injected as an impurity into the polycrystalline silicon film by an ion-injection method to make the polycrystalline silicon film an amorphous layer. The amorphous layer is heat-treated at a temperature of 600.degree. C. to 650.degree. C. to recrystallize the amorphous layer, thus forming a recrystallized layer having a grain size greater than that of the polycrystalline silicon film by solid phase growth. The recrystallized layer is heat-treated at a temperature of 800.degree. C. to 900.degree. C. to diffuse the impurity into the monocrystalline semiconductor substrate.

摘要翻译： 一种制备半导体器件的方法，其中在单晶半导体衬底上形成多晶硅膜，并且通过离子注入法将砷或磷作为杂质注入多晶硅膜中，以使多晶硅膜成为非晶层 。 在600〜650℃的温度下对非晶层进行热处理，使非晶质层重结晶，通过固相生长形成晶粒尺寸大于多晶硅膜的再结晶层。 在800〜900℃的温度下对再结晶层进行热处理，将杂质扩散到单晶半导体衬底中。

公开(公告)号：US20140090244A1

公开(公告)日：2014-04-03

申请号：US14116256

申请日：2012-03-08

申请人： Masaru Sakamoto

发明人： Masaru Sakamoto

IPC分类号： H05K3/30 ,  H05K3/00

CPC分类号： H05K3/301 ,  H05K3/0008 ,  H05K13/0452 ,  H05K13/08 ,  H05K13/085 ,  Y10T29/4913 ,  Y10T29/49778

摘要： The present invention relates to a setup method for deciding component feeding apparatuses to be attached to each of mounting machines in a component mounting system. The setup method includes a first step of deciding component feeding apparatuses to be attached to each of the mounting machines based on substrate data defining components to be mounted by each of the mounting machines; a second step of determining whether or not there is within the components included in the substrate data a sole mounted component to be mounted by only one mounting machine among the multiple mounting machines; and a third step of deciding, when the determination is made that the sole mounted component exists, to attach component feeding apparatuses feeding the sole mounted component or an alternative component capable of replacing the sole mounted component onto at least one mounting machine other than the only one mounting machine.

摘要翻译： 本发明涉及一种用于在部件安装系统中确定要安装到每个安装机上的部件供给装置的设置方法。 该设置方法包括：第一步骤，基于基于定义要由每个安装机器安装的部件的基板数据来确定要附接到每个安装机器的部件供给装置; 确定在所述多个安装机中仅由一个安装机安装的唯一安装部件中是否存在包括在所述基板数据中的部件内的第二步骤; 以及第三步骤，当确定存在唯一安装的部件时，将馈送鞋底安装部件的部件进给装置或能够将唯一安装的部件替换到除了唯一安装部件之外的至少一个安装机器的替代部件 一台安装机。

公开(公告)号：US20140001039A1

公开(公告)日：2014-01-02

申请号：US14004289

申请日：2012-07-06

申请人： Tomoya Tamura ,  Masaru Sakamoto

发明人： Tomoya Tamura ,  Masaru Sakamoto

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  B22D11/004 ,  C22C9/00 ,  C22F1/00 ,  C22F1/08

摘要： The purpose of the invention is to provide a sputtering target formed from a Cu—Ga alloy having a Ga composition of 29 at % or more.[Problem] Since a Cu—Ga alloy becomes a brittle γ phase-single phase structure when the Ga composition becomes 29 at % or more, it cannot be subject to processes such as rolling and forging. Accordingly, the crystal grain size of the cast structure must be small and uniform so that the cast structure can be used as is.[Solution] It is possible to produce a melted and cast Cu—Ga alloy sputtering target containing 29 to 42.6 at % of Ga, and remainder being Cu and unavoidable impurities by continuously solidifying the Cu—Ga alloy sputtering target under solidifying conditions of a constant cooling rate or higher, wherein an average crystal grain size of a sputter front face is 3 mm or less, and a cross section structure of the target is a columnar structure that has grown in a direction from the sputter front face toward a center plane which is parallel to a sputter face.

摘要翻译： 本发明的目的是提供一种由Ga组成为29原子％以上的Cu-Ga合金形成的溅射靶。 [问题]由于当Ga成分为29原子％以上时，Cu-Ga合金成为脆性γ相 - 单相结构，因此不能进行轧制和锻造等工序。 因此，铸造结构的晶粒尺寸必须小且均匀，从而可以直接使用铸造结构。 [解决方案]通过在恒定的固化条件下连续固化Cu-Ga合金溅射靶，可以制造含有29〜42.6at％的Ga的熔融铸造的Cu-Ga合金溅射靶，余量为Cu和不可避免的杂质 冷却速度或更高，其中溅射前面的平均晶粒尺寸为3mm以下，靶的截面结构是在从溅射前面朝向中心面的方向上生长的柱状结构， 平行于溅射面。

公开(公告)号：US20130037408A1

公开(公告)日：2013-02-14

申请号：US13504329

申请日：2011-07-07

申请人： Yousuke Endo ,  Masaru Sakamoto

发明人： Yousuke Endo ,  Masaru Sakamoto

IPC分类号： C23C14/06 ,  B23P17/00 ,  C23C14/34

CPC分类号： C23C14/3414 ,  H01J37/3414 ,  H01J37/3426 ,  Y10T29/49991

摘要： The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less.

摘要翻译： 本发明提供了一种铟靶及其制备方法，其沉积速率高，初始放电电压低，并且从溅射开始到溅射结束时的沉积速率和放电电压都是稳定的。 在铟靶中，从靶的截面方向观察到的结晶粒子的长径比（长度方向/长度方向的长度）为2.0以下。

公开(公告)号：US20120224269A1

公开(公告)日：2012-09-06

申请号：US13407297

申请日：2012-02-28

申请人： Masaru Sakamoto

发明人： Masaru Sakamoto

IPC分类号： G02B15/10

CPC分类号： G02B15/17 ,  G02B13/22 ,  G02B15/10

摘要： A zoom lens includes, in order from an object side to an image side, a first lens unit having a positive refractive power, which does not move for zooming, a second lens unit having a negative refractive power, which moves during zooming, a third lens unit having a negative refractive power, which moves during zooming, an aperture stop, and a fourth lens unit having a positive refractive power, which does not move for zooming. The fourth lens unit includes a first lens sub-unit, a focal length conversion optical system configured to be inserted into or removed from an optical path, and a second lens sub-unit. A focal length of the second lens sub-unit, a distance from the aperture stop to a lens surface at the most object side of the second lens sub-unit, and an F-number of the entire zoom lens at a wide-angle end are appropriately set.

摘要翻译： 变焦透镜从物体侧到像侧依次包括具有正折射力的第一透镜单元，其不具有用于变焦的移动功能，具有在变焦期间移动的具有负折光力的第二透镜单元， 具有负折射力的透镜单元，其在变焦期间移动，孔径光阑和具有正折射力的第四透镜单元，其不能移动用于变焦。 第四透镜单元包括第一透镜子单元，被配置为插入到光路中或从光路移除的焦距转换光学系统和第二透镜子单元。 第二透镜子单元的焦距，从孔径光阑到第二透镜子单元的最物体侧的透镜表面的距离，以及广角端的变焦透镜整体的F数 适当设定。

公开(公告)号：US08021837B2

公开(公告)日：2011-09-20

申请号：US11361316

申请日：2006-02-24

申请人： Daniel Pinkel ,  Joe W Gray ,  Anne Kallioniemi ,  Ollie-Pekka Kallioniemi ,  Frederic Waldman ,  Masaru Sakamoto

发明人： Daniel Pinkel ,  Joe W Gray ,  Anne Kallioniemi ,  Ollie-Pekka Kallioniemi ,  Frederic Waldman ,  Masaru Sakamoto

IPC分类号： C12Q1/68 ,  G01N33/566 ,  G01N33/53 ,  C07H21/02 ,  C07H21/04

CPC分类号： C12Q1/6809 ,  C12Q1/6841 ,  C12Q1/6886 ,  C12Q2600/156 ,  G06F15/025 ,  Y10S436/813 ,  C12Q2545/114 ,  C12Q2537/157

摘要： Disclosed are new methods comprising the use of in situ hybridization to detect abnormal nucleic acid sequence copy numbers in one or more genomes wherein repetitive sequences that bind to multiple loci in a reference chromosome spread are either substantially removed and/or their hybridization signals suppressed. The invention termed Comparative Genomic Hybridization (CGH) provides for methods of determining the relative number of copies of nucleic acid sequences in one or more subject genomes or portions thereof (for example, a tumor cell) as a function of the location of those sequences in a reference genome (for example, a normal human genome). The intensity(ies) of the signals from each labeled subject nucleic acid and/or the differences in the ratios between different signals from the labeled subject nucleic acid sequences are compared to determine the relative copy numbers of the nucleic acid sequences in the one or more subject genomes as a function of position along the reference chromosome spread. Amplifications, duplications and/or deletions in the subject genome(s) can be detected. Also provided is a method of determining the absolute copy numbers of substantially all RNA or DNA sequences in subject cell(s) or cell population(s).

摘要翻译： 公开了包括使用原位杂交来检测一个或多个基因组中的异常核酸序列拷贝数的新方法，其中结合参考染色体扩增的多个基因座的重复序列基本上被去除和/或其杂交信号被抑制。 称为比较基因组杂交（CGH）的发明提供了确定一个或多个受试者基因组或其部分（例如肿瘤细胞）中核酸序列的相对拷贝数的方法，作为这些序列的位置的函数 参考基因组（例如，正常人类基因组）。 比较来自每个标记的对象核酸的信号的强度和/或来自标记的目标核酸序列的不同信号之间的比率差异，以确定一个或多个核酸序列中核酸序列的相对拷贝数 主题基因组作为沿着参考染色体扩散的位置的函数。 可以检测主题基因组中的扩增，重复和/或缺失。 还提供了确定受试细胞或细胞群体中基本上所有RNA或DNA序列的绝对拷贝数的方法。

公开(公告)号：US20110080652A1

公开(公告)日：2011-04-07

申请号：US12895575

申请日：2010-09-30

申请人： Hiroki Nakayama ,  Chiaki Inoue ,  Masaru Sakamoto

发明人： Hiroki Nakayama ,  Chiaki Inoue ,  Masaru Sakamoto

IPC分类号： G02B15/167

CPC分类号： G02B15/173 ,  G02B13/009

摘要： A zoom lens includes, in order from an object side to an image side and arranged along an optical axis, first to fifth lens units having positive, negative, positive, positive or negative, and positive refractive power, respectively. When zooming, the second lens unit moves monotonically to the image side, the third lens unit moves to the object side in a convex locus, the fifth lens unit moves nonlinearly, and the first and fourth lens units do not move. The fourth lens unit includes a first sub lens unit and a second sub lens unit; the first sub lens unit is an image-stabilizing lens unit that includes a first lens having negative refractive power and a second lens having positive or negative refractive power. The focal length of the fourth lens unit, the focal length of the entire system at the wide-angle end, the Abbe numbers of the materials of the first and second lenses are set appropriately based on predetermined conditions.

摘要翻译： 变焦透镜从物体侧到像侧依次沿光轴布置，分别具有正，负，正，正或负和正屈光力的第一至第五透镜单元。 当变焦时，第二透镜单元单调地移动到图像侧，第三透镜​​单元以凸形轨迹移动到物体侧，第五透镜单元非线性移动，第一和第四透镜单元不移动。 第四透镜单元包括第一子透镜单元和第二子透镜单元; 第一子透镜单元是包括具有负折光力的第一透镜和具有正或负折射光焦度的第二透镜的图像稳定透镜单元。 基于预定条件适当地设置第四透镜单元的焦距，广角端处的整个系统的焦距，第一和第二透镜的材料的阿贝数。