公开(公告)号：US5721161A

公开(公告)日：1998-02-24

申请号：US555442

申请日：1995-11-09

申请人： Chanh Nguyen ,  Takyiu Liu ,  Mehran Matloubian

发明人： Chanh Nguyen ,  Takyiu Liu ,  Mehran Matloubian

IPC分类号： H01L21/335 ,  H01L29/201 ,  H01L29/205 ,  H01L29/778 ,  H01L21/00

CPC分类号： H01L29/66462 ,  H01L29/201 ,  H01L29/205 ,  H01L29/7783

摘要： An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.

摘要翻译： 一种能够实现高速低噪声微波，亚毫米波和毫米波应用的场效应晶体管的外延结构和制造方法。 优选地，外延结构包括由具有式AlP0.39 + ySb0.61-y的半导体材料制成的施主层和/或缓冲层。

公开(公告)号：US5629241A

公开(公告)日：1997-05-13

申请号：US499800

申请日：1995-07-07

申请人： Mehran Matloubian ,  Perry A. Macdonald ,  David B. Rensch ,  Lawrence E. Larson

发明人： Mehran Matloubian ,  Perry A. Macdonald ,  David B. Rensch ,  Lawrence E. Larson

IPC分类号： H01L21/60 ,  H01L23/66 ,  H01P3/08 ,  H01Q23/00 ,  H05K1/02 ,  H05K3/34

CPC分类号： H01L25/162 ,  H01L23/66 ,  H01L24/81 ,  H01Q23/00 ,  H05K3/3452 ,  H01L2223/6677 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/0237 ,  H05K2201/0175 ,  H05K2203/0315

摘要： A microwave/millimeter wave circuit structure supports discrete circuit elements by flip-chip mounting to an interconnection network on a low cost non-ceramic and non-semiconductor dielectric substrate, preferably Duroid. The necessary precise alignment of the circuit elements with contact pads on the substrate network required for the high operating frequencies is facilitated by oxidizing the interconnection network, but providing the contact pads from a non-oxidizable material to establish a preferential solder bump wetting for the pads. Alternately, the contact bumps on the flip-chips can be precisely positioned through corresponding openings in a passivation layer over the interconnection network. For thin circuit substrates that are too soft for successful flip-chip mounting, stiffening substrates are laminated to the circuit substrates. In a self-contained antenna application in which two of the circuit substrates are laminated together, with an antenna on one side and circuitry on the other side, a metallic ground plane between the substrates also serves a stiffening function.

摘要翻译： 微波/毫米波电路结构通过倒装芯片安装到低成本非陶瓷和非半导体电介质基底（优选为Duroid）上的互连网络来支持分立电路元件。 通过氧化互连网络来提供电路元件与高工作频率所需的基板网络上的接触焊盘的必要精确对准，但是提供来自不可氧化材料的接触焊盘以建立用于焊盘的优先焊料凸块润湿 。 或者，倒装芯片上的接触凸块可以通过互连网络上的钝化层中的相应开口精确定位。 对于对于成功倒装芯片安装来说太软的薄电路基板，加固基板被层压到电路基板上。 在其中两个电路基板层叠在一起的独立天线应用中，一侧的天线和另一侧的电路，在基板之间的金属接地平面也起增强作用。

公开(公告)号：US5548140A

公开(公告)日：1996-08-20

申请号：US466156

申请日：1995-06-06

申请人： Chanh Nguyen ,  Takyiu Liu ,  Mehran Matloubian

发明人： Chanh Nguyen ,  Takyiu Liu ,  Mehran Matloubian

IPC分类号： H01L21/335 ,  H01L29/201 ,  H01L29/205 ,  H01L29/778 ,  H01L31/0328 ,  H01L29/06

CPC分类号： H01L29/66462 ,  H01L29/201 ,  H01L29/205 ,  H01L29/7783

摘要： An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.

摘要翻译： 一种能够实现高速低噪声微波，亚毫米波和毫米波应用的场效应晶体管的外延结构和制造方法。 优选地，外延结构包括由具有式AlP0.39 + ySb0.61-y的半导体材料制成的施主层和/或缓冲层。