公开(公告)号：US20210296192A1

公开(公告)日：2021-09-23

申请号：US16821536

申请日：2020-03-17

Applicant: Micron Technology, Inc.

Inventor： Andrew M. Bayless ,  Brandon P. Wirz

IPC: H01L23/29 ,  H01L23/053

Abstract: This patent application relates to methods and apparatus for temperature modification within a stack of microelectronic devices for mutual collective bonding of the microelectronic devices, and to related substrates and assemblies.

公开(公告)号：US20210272846A1

公开(公告)日：2021-09-02

申请号：US16994941

申请日：2020-08-17

Applicant: Micron Technology, Inc.

Inventor： Andrew M. Bayless ,  Brandon P. Wirz

IPC: H01L21/78 ,  H01L21/56 ,  H01L21/02 ,  H01L21/683 ,  H01L21/268

Abstract: Singulated integrated circuit (IC) dice are provided. The singulated IC dice are positioned on dicing tape to provide open space between sides of adjacent singulated IC dice. An underfill layer and a protective cover film is disposed above the singulated IC dice and the open space between the sides of the adjacent singulated IC dice. The underfill layer and the protective cover film include one or more photodefinable materials. An exposure operation is performed to produce a pattern on the underfill layer and the protective cover film. Based on the pattern, the underfill layer and the protective cover film is removed at areas above the open space between the sides of the adjacent singulated IC dice to create portions of the underfill layer and portions of the protective cover film that are disposed above the singulated IC dice.

公开(公告)号：US10770421B2

公开(公告)日：2020-09-08

申请号：US16236446

申请日：2018-12-29

Applicant: Micron Technology, Inc.

Inventor： Andrew M. Bayless ,  Cassie L. Bayless

IPC: H01L23/00 ,  B32B37/12 ,  H01L21/66

Abstract: A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature. The bond chuck can be positioned proximate a substrate of a semiconductor device such that heating the first region and/or second region affect the viscosity of an adhesive used to bond substrates of the semiconductor device to one another. Accordingly, heating the first region and/or the second region can cause the adhesive on the substrate to flow in a lateral, predetermined direction.

公开(公告)号：US20200212003A1

公开(公告)日：2020-07-02

申请号：US16236449

申请日：2018-12-29

Applicant: Micron Technology, Inc.

Inventor： Andrew M. Bayless ,  Cassie L. Bayless

IPC: H01L23/00 ,  H01L21/66 ,  B32B37/12

Abstract: A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions that are movable relative to one another in a longitudinal direction. In some embodiments, the individual regions include a first region having a first outer surface, and a second region peripheral to the first region and including a second outer surface. The first region is movable in a longitudinal direction to a first position, and the second region is movable in the longitudinal direction to a second position, such that in the second position, the second outer surface of the second region extends longitudinally beyond the first outer surface of the first region. The bond chuck can be positioned proximate a substrate of a semiconductor device such that movement of the first region and/or second region affect a shape of the substrate, which thereby causes an adhesive on the substrate to flow in a lateral, predetermined direction.

公开(公告)号：US20200212001A1

公开(公告)日：2020-07-02

申请号：US16236441

申请日：2018-12-29

Applicant: Micron Technology, Inc.

Inventor： Andrew M. Bayless ,  Cassie L. Bayless

IPC: H01L23/00

Abstract: A semiconductor manufacturing system comprises a laser and a heated bond tip and is configured to bond a die stack in a semiconductor assembly. The semiconductor assembly includes a wafer, manufacture from a material that is optically transparent to a beam emitted by the laser and configured to support a die stack comprising a plurality of semiconductor dies. A metal film is deposited on the wafer and heatable by the beam emitted by the laser. The heated bond tip applies heat and pressure to the die stack, compressing the die stack between the heated bond tip and the metal film and thermally bonding dies in the stack by heat emitted by the heated bond tip and the metal film when the metal film is heated by the beam emitted from the laser.

公开(公告)号：US20190057901A1

公开(公告)日：2019-02-21

申请号：US15680461

申请日：2017-08-18

Applicant: Micron Technology, Inc.

Inventor： Andrew M. Bayless

IPC: H01L21/78 ,  H01L23/535 ,  H01L23/528 ,  H01L23/00

Abstract: A method of processing a device wafer comprising applying a sacrificial material to a surface of a carrier wafer, adhering a surface of the device wafer to an opposing surface of the carrier wafer, planarizing an exposed surface of the sacrificial material by removing only a portion of a thickness thereof, and planarizing an opposing surface of the device wafer. A wafer assembly is also disclosed.

公开(公告)号：US20170194351A1

公开(公告)日：2017-07-06

申请号：US15464060

申请日：2017-03-20

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Ming Zhang ,  Andrew M. Bayless ,  John K. Zahurak

IPC: H01L27/12 ,  H01L21/762 ,  H01L29/04 ,  H01L21/02 ,  H01L29/16 ,  H01L21/84 ,  H01L21/306

CPC classification number: H01L27/1203 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1021 ,  H01L27/10802 ,  H01L27/12 ,  H01L27/24 ,  H01L29/04 ,  H01L29/16 ,  H01L29/7841 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/78648

Abstract: Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.