公开(公告)号：US11908828B2

公开(公告)日：2024-02-20

申请号：US17845635

申请日：2022-06-21

申请人： Micron Technology, Inc.

发明人： Brandon P. Wirz ,  Jaekyu Song ,  Sui Chi Huang

IPC分类号： H01L21/67 ,  H01L21/50 ,  H01L21/60 ,  H01L23/00

CPC分类号： H01L24/80 ,  H01L21/50 ,  H01L21/67098 ,  H01L2021/60195 ,  H01L2224/75251 ,  H01L2224/81203 ,  H01L2224/94

摘要： Systems and methods for controlling contamination during thermocompression bonding are provided herein. The tool generally includes a bondhead having a first channel extending in a lateral direction from a first port along a second side toward a perimeter of the bondhead. In several examples, the bondhead includes a second channel fluidly coupled to a second port and extending in a lateral direction along an inset surface of the bondhead, where the second channel at least partially surrounds the first channel. In other examples, the tool includes a vacuum manifold having a vacuum opening positioned laterally outward from the bondhead. A first flow unit is coupled to the first channel and is configured to withdraw air. A second flow unit is coupled to the second port or the manifold to withdraw fluid and prevent outgassing bonding materials from entering the first channel, depositing on the bondhead, and/or contaminating neighboring semiconductor components.

公开(公告)号：US20230317511A1

公开(公告)日：2023-10-05

申请号：US18111496

申请日：2023-02-17

申请人： Micron Technology, Inc.

发明人： Andrew M. Bayless ,  Brandon P. Wirz ,  Owen R. Fay

IPC分类号： H01L21/768 ,  H01L21/02 ,  G03F7/004 ,  G03F7/20

CPC分类号： H01L21/76801 ,  G03F7/004 ,  G03F7/20 ,  H01L21/02348

摘要： A method for smoothing structures formed of curable materials on a semiconductor device includes applying a layer of photo-responsive material on a substrate. The photo-responsive material is exposed to ultraviolet light through a grayscale gradient mask. Subsequent to removing unwanted portions of the photo-responsive material, the photo-responsive material that remains on the substrate is cured. During the curing process, the temperature is increased from a starting temperature to a final cure temperature over a first time period that allows the photo-responsive material to cross-flow. The temperature of the photo-responsive material is maintained at approximately the final cure temperature for a second time period, and then the temperature of the photo-responsive material is decreased to a predetermined finish temperature over a third time period.

公开(公告)号：US20230282607A1

公开(公告)日：2023-09-07

申请号：US18111525

申请日：2023-02-17

申请人： Micron Technology, Inc.

发明人： Ting Yi Lin ,  Brandon P. Wirz

IPC分类号： H01L23/00 ,  H01L25/065

CPC分类号： H01L24/33 ,  H01L25/0657 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/14 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/30 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/16145 ,  H01L2224/14132 ,  H01L2224/14181 ,  H01L2224/14517 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/06517 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L2224/30134 ,  H01L2224/29034 ,  H01L2224/32145 ,  H01L2224/33181 ,  H01L2224/3303 ,  H01L2224/81024 ,  H01L2224/81815 ,  H01L2224/8113 ,  H01L2224/81065 ,  H01L2224/81203 ,  H01L2224/8313 ,  H01L2224/83862 ,  H01L2924/3511 ,  H01L2224/83951 ,  H01L2224/92125 ,  H01L2224/92225

摘要： A semiconductor device assembly includes a die stack, a plurality of thermoset regions, and underfill material. The die stack includes at least first and second dies that each have a plurality of conductive interconnect elements on upper surfaces. A portion of the interconnect elements are connected to through-silicon vias that extend between the upper surfaces and lower surfaces of the associated dies. The plurality of thermoset regions each comprise a thin layer of thermoset material extending from the lower surface of the second die to the upper surface of the first die, and are laterally-spaced and discrete from each other. Each of the thermoset regions extends to fill an area between a plurality of adjacent interconnect elements of the first die. The underfill material fills remaining open areas between the interconnect elements of the first die.

公开(公告)号：US11705425B2

公开(公告)日：2023-07-18

申请号：US17301843

申请日：2021-04-15

申请人： Micron Technology, Inc.

发明人： Benjamin L. McClain ,  Brandon P. Wirz ,  Zhaohui Ma

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L24/75 ,  H01L21/4853 ,  H01L21/563 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/13 ,  H01L24/16 ,  H01L24/94 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/2783 ,  H01L2224/2784 ,  H01L2224/27436 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73204 ,  H01L2224/7532 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75303 ,  H01L2224/75312 ,  H01L2224/75318 ,  H01L2224/75745 ,  H01L2224/8182 ,  H01L2224/81169 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/83203 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2924/00012 ,  H01L2224/94 ,  H01L2224/27 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/9212 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/9211 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/81169 ,  H01L2924/00014 ,  H01L2224/2783 ,  H01L2924/00012

摘要： A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.

公开(公告)号：US11515171B2

公开(公告)日：2022-11-29

申请号：US16895751

申请日：2020-06-08

申请人： Micron Technology, Inc.

发明人： Xiaopeng Qu ,  Hyunsuk Chun ,  Brandon P. Wirz ,  Andrew M. Bayless

IPC分类号： H01L21/447 ,  H01L21/67 ,  H01L21/033 ,  B23K20/02

摘要： This patent application relates to methods and apparatus for temperature modification and reduction of contamination in bonding stacked microelectronic devices with heat applied from a bond head of a thermocompression bonding tool. The stack is substantially enclosed within a skirt carried by the bond head to reduce heat loss and contaminants from the stack, and heat may be added from the skirt.

公开(公告)号：US20220344161A1

公开(公告)日：2022-10-27

申请号：US17241386

申请日：2021-04-27

申请人： Micron Technology, Inc.

发明人： Andrew M. Bayless ,  Brandon P. Wirz

IPC分类号： H01L21/265 ,  H01L21/768 ,  H01L21/324

摘要： A microelectronic device may have side surfaces each including a first portion and a second portion. The first portion may have a highly irregular surface topography extending from an adjacent surface of the microelectronic device. The second portion may have a less uneven surface extending from the first portion to an opposing surface of the microelectronic device. Methods of forming the microelectronic device may include creating dislocations in the wafer in a street between the one or more microelectronic devices by implanting ions and cleaving the wafer responsive to failure of stress concentrations near the dislocations through application of heat, tensile forces or a combination thereof. Related packages and methods are also disclosed.

公开(公告)号：US20220336366A1

公开(公告)日：2022-10-20

申请号：US17231210

申请日：2021-04-15

申请人： Micron Technology, Inc.

发明人： Brandon P. Wirz ,  Andrew M. Bayless

IPC分类号： H01L23/532 ,  H01L23/48 ,  H01L25/065 ,  H01L23/31 ,  H01L21/78 ,  H01L25/00

摘要： Semiconductor dies with edges protected and methods for generating the semiconductor dies are disclosed. Further, the disclosed methods provide for separating the semiconductor dies without using a dicing technique. In one embodiment, trenches are formed on a front side of a substrate including semiconductor dies. Individual trenches correspond to scribe lines of the substrate where each trench has a depth greater than a final thickness of the semiconductor dies. A composite layer may be formed on sidewalls of the trenches to protect the edges of the semiconductor dies. The composite layer includes a metallic layer that shields the semiconductor dies from electromagnetic interference. Subsequently, the substrate may be thinned from a back side to singulate individual semiconductor dies from the substrate.

公开(公告)号：US11289360B2

公开(公告)日：2022-03-29

申请号：US16715540

申请日：2019-12-16

申请人： Micron Technology, Inc.

发明人： Andrew M. Bayless ,  Brandon P. Wirz ,  Wei Zhou

IPC分类号： H01L21/683 ,  H01L21/78 ,  H01L21/67

摘要： Disclosed are methods and apparatus for protecting dielectric films on microelectronic components from contamination associated with singulation, picking and handling of singulated microelectronic components from a wafer for assembly with other components.

公开(公告)号：US11189609B2

公开(公告)日：2021-11-30

申请号：US16864873

申请日：2020-05-01

申请人： Micron Technology, Inc.

发明人： Brandon P. Wirz ,  Andrew M. Bayless

IPC分类号： H01L25/00 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065

摘要： Methods for reducing heat transfer in semiconductor devices, and associated systems and devices, are described herein. In some embodiments, a method of manufacturing a semiconductor device includes forming a channel in a region of a substrate between a first die stack and a second die stack. The first die stack includes a plurality of first dies attached to each other by first film layers and the second die stack includes a plurality of second dies attached to each other by second film layers. The channel extends entirely through a thickness of the substrate. The method also includes applying heat to the first die stack to cure the first film layers. The channel reduces heat transfer from the first die stack to the second die stack.

公开(公告)号：US20210183682A1

公开(公告)日：2021-06-17

申请号：US16715540

申请日：2019-12-16

申请人： Micron Technology, Inc.

发明人： Andrew M. Bayless ,  Brandon P. Wirz ,  Wei Zhou

IPC分类号： H01L21/683 ,  H01L21/78 ,  H01L21/67

摘要： Disclosed are methods and apparatus for protecting dielectric films on microelectronic components from contamination associated with singulation, picking and handling of singulated microelectronic components from a wafer for assembly with other components.