公开(公告)号：US20180006076A1

公开(公告)日：2018-01-04

申请号：US15198055

申请日：2016-06-30

Applicant: OmniVision Technologies, Inc.

Inventor： Takayuki Goto ,  Dajiang Yang ,  Keiji Mabuchi ,  Sohei Manabe

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/113

CPC classification number: H01L27/14645 ,  H01L27/14649 ,  H01L31/105 ,  H01L31/1136

Abstract: An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate.