公开(公告)号：US20240347663A1

公开(公告)日：2024-10-17

申请号：US18292137

申请日：2022-07-25

Applicant: KYOCERA Corporation

Inventor： Genshitaro KAWAMURA ,  Naoyoshi KOMATSU ,  Haruhiko UDONO

IPC: H01L31/105 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/032 ,  H01L31/0352

CPC classification number: H01L31/105 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/032 ,  H01L31/035281

Abstract: A photodiode includes: a p+ type semiconductor layer having a first surface in contact with a first electrode and a surface protective film located at a peripheral portion of the first electrode; an n-type semiconductor layer in contact with a second surface of the p+ type semiconductor layer opposing the first surface; an n+ type semiconductor layer in contact with a third surface of the n-type semiconductor layer opposing a surface in contact with the second surface; and a second electrode in contact with a fourth surface of the n+ type semiconductor layer opposing a surface in contact with the third surface. The p+ type semiconductor layer, the n-type semiconductor layer, and the n+ type semiconductor layer contain Mg2Si.

公开(公告)号：US12094989B2

公开(公告)日：2024-09-17

申请号：US18350813

申请日：2023-07-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Ming Chen ,  Lee-Chuan Tseng ,  Ming Chyi Liu ,  Po-Chun Liu

IPC: H01L31/0352 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/103 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/02161 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/105 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/547

Abstract: Some embodiments relate to an integrated circuit (IC) disposed on a silicon substrate, which includes a well region having a first conductivity type. An epitaxial pillar of SiGe or Ge extends upward from the well region. The epitaxial pillar includes a lower epitaxial region having the first conductivity type and an upper epitaxial region having a second conductivity type, which is opposite the first conductivity type. A dielectric layer is arranged over an upper surface of the substrate and is disposed around the lower epitaxial region to extend over outer edges of the well region. The dielectric layer has inner sidewalls that contact outer sidewalls of the epitaxial pillar. A dielectric sidewall structure has a bottom surface that rests on an upper surface of the dielectric layer and has inner sidewalls that extend continuously from the upper surface of the dielectric layer to a top surface of the epitaxial pillar.

公开(公告)号：US20240285168A1

公开(公告)日：2024-08-29

申请号：US18509093

申请日：2023-11-14

Applicant: MASIMO SEMICONDUCTOR, INC.

Inventor： Steven J. Wojtczuk ,  Xuebing Zhang ,  William J. MacNeish, III

IPC: A61B5/00 ,  H01L31/0216 ,  H01L31/0304 ,  H01L31/105

CPC classification number: A61B5/0059 ,  H01L31/02162 ,  H01L31/03046 ,  H01L31/105 ,  A61B5/6826 ,  A61B2562/0238 ,  Y02E10/544

Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.

公开(公告)号：US20240201438A1

公开(公告)日：2024-06-20

申请号：US18084921

申请日：2022-12-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/122 ,  G02B6/13 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

CPC classification number: G02B6/1228 ,  G02B6/13 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1808

Abstract: Structures including a photodetector and methods of forming a structure including a photodetector. The structure comprises a photodetector including a pad having a side edge and a light-absorbing layer disposed on the pad. The structure further comprises a waveguide core including a tapered section positioned adjacent to the side edge of the pad and the light-absorbing layer. The tapered section has a width dimension that decreases with decreasing distance from the side edge of the pad.

公开(公告)号：US20240120432A1

公开(公告)日：2024-04-11

申请号：US18185089

申请日：2023-03-16

Applicant: ARCHE CO., LTD.

Inventor： Chan Uk JON ,  Jun Yong BAK ,  Jae Kwang YOON

IPC: H01L31/18 ,  H01L31/105

CPC classification number: H01L31/1804 ,  H01L31/105

Abstract: The present application relates to a method for manufacturing a transparent solar cell comprising a n-type semiconductor, a light absorption layer, and a p-type semiconductor including SiC.

公开(公告)号：US20240105864A1

公开(公告)日：2024-03-28

申请号：US18264502

申请日：2022-02-09

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Abdelkader ALIANE ,  Hacile KAYA

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/022408 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1808

Abstract: A photodiode including a detection portion made of a first germanium-based crystalline semiconductor material, including a first doped region, a second doped region, and an intermediate region; an interposed portion, in contact with the first doped region, made of a crystalline semiconductor material having a natural lattice parameter equal, to within 1%, to a natural lattice parameter of the first semiconductor material, and a bandgap energy at least 0.5 eV higher than that of the first semiconductor material.

公开(公告)号：US20230420480A1

公开(公告)日：2023-12-28

申请号：US18210946

申请日：2023-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junho LEE ,  Sookyoung Roh ,  Sangeun Mun ,  Seokho Yun

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/105

CPC classification number: H01L27/14645 ,  H01L27/14625 ,  H01L31/035281 ,  H01L31/105

Abstract: An image sensor may include a pixel array including a plurality of two-dimensionally arranged pixels. Each pixel may include a first meta-photodiode absorbing light of a first wavelength band; a second meta-photodiode absorbing light in a second wavelength band; and a third meta-photodiode absorbing light of a third wavelength band, wherein the first meta-photodiode, the second meta-photodiode, and the third meta-photodiode may be arranged in an area having a size less than a diffraction limit. The arrangement form of the first meta-photodiode, the second meta-photodiode, and the third meta-photodiode arranged in the plurality of pixels in a central portion of the pixel array may be the same as the arrangement form of the first meta-photodiode, the second meta-photodiode, and the third meta-photodiode arranged in the plurality of pixels in a periphery of the pixel array.

公开(公告)号：US11837678B2

公开(公告)日：2023-12-05

申请号：US17486219

申请日：2021-09-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Sebastien Cremer ,  Nathalie Vulliet ,  Denis Pellissier-Tanon

IPC: H01L27/146 ,  H01L31/109 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105

CPC classification number: H01L31/109 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/1804

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US20230387333A1

公开(公告)日：2023-11-30

申请号：US17664741

申请日：2022-05-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Rajendran Krishnasamy ,  Ramsey Hazbun

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/0216 ,  H01L31/1804 ,  H01L31/105 ,  H01L31/022408

Abstract: A photodetector structure includes a first semiconductor material layer on a first portion of a doped well in a substrate. The photodetector structure includes a second semiconductor layer over the first semiconductor layer. The first and second semiconductor material layers may include an undoped semiconductor material. The photodetector structure includes an insulative collar laterally surrounding the first and second semiconductor material layers. The insulative collar may include a varying horizontal thickness. The photodetector structure includes a doped semiconductor material having an opposite doping polarity relative to the doped well, and positioned over the second semiconductor material layer and the insulating collar.

公开(公告)号：US11830963B2

公开(公告)日：2023-11-28

申请号：US17667575

申请日：2022-02-09

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur

IPC: H01L33/00 ,  H01L33/32 ,  H01L31/0352 ,  H01L33/14 ,  H01L31/105 ,  H01L31/0224 ,  H01L31/0304 ,  H01L33/02 ,  H01L31/109 ,  H01L33/04 ,  H01L33/06

CPC classification number: H01L33/002 ,  H01L31/022408 ,  H01L31/03048 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/109 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/06 ,  H01L2933/0008

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.