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74 条记录 (耗时 0.034 秒)

    SEMICONDUCTOR CHIP WITH BACKSIDE CONDUCTOR STRUCTURE
    72.
    发明申请
    SEMICONDUCTOR CHIP WITH BACKSIDE CONDUCTOR STRUCTURE 有权
    具有背面导体结构的半导体芯片

    公开(公告)号：US20120007075A1

    公开(公告)日：2012-01-12

    申请号：US13239872

    申请日：2011-09-22

    申请人： Liang Wang ,  Michael R. Bruce

    发明人： Liang Wang ,  Michael R. Bruce

    IPC分类号： H01L23/544

    CPC分类号： H01L22/20 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/32 ,  H01L23/544 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00

    摘要： Various semiconductor devices and methods of testing such devices are disclosed. In one aspect, a method of manufacturing is provided that includes forming a bore from a backside of a semiconductor chip through a buried insulating layer and to a semiconductor device layer of the semiconductor chip. A conductor structure is formed in the bore to establish an electrically conductive pathway between the semiconductor device layer and the conductor structure. The conductor structure may provide a diagnostic pathway.

    摘要翻译： 公开了各种半导体器件和测试这些器件的方法。 一方面，提供了一种制造方法，其包括通过掩埋绝缘层从半导体芯片的背面形成孔，并且形成半导体芯片的半导体器件层。 在孔中形成导体结构，以在半导体器件层和导体结构之间建立导电通路。 导体结构可以提供诊断途径。

    Method for laser scanning flip-chip integrated circuits
    73.
    发明授权
    Method for laser scanning flip-chip integrated circuits 失效
    激光扫描倒装芯片集成电路方法

    公开(公告)号：US06375347B1

    公开(公告)日：2002-04-23

    申请号：US09654823

    申请日：2000-09-05

    申请人： Victoria J. Bruce ,  Michael R. Bruce

    发明人： Victoria J. Bruce ,  Michael R. Bruce

    IPC分类号： G01N2572

    CPC分类号： G01N25/72 ,  G01J5/0003 ,  G01K11/00

    摘要： Methods for analyzing temperature characteristics of an integrated circuit. In one embodiment, a beam of laser light is directed at the back side of an integrated circuit. The intensity level of laser light reflected from the integrated circuit is measured and compared to a reference intensity level. The magnitude of the difference between the reference intensity level and the intensity level of the reflected laser light is indicative of a temperature characteristic of the integrated circuit.

    摘要翻译： 分析集成电路温度特性的方法。 在一个实施例中，激光束指向集成电路的背面。 测量从集成电路反射的激光的强度水平，并将其与基准亮度水平进行比较。 基准亮度电平与反射激光的强度电平之差的大小表示集成电路的温度特性。

    Inducement and detection of latch-up using a laser scanning microscope
    74.
    发明授权
    Inducement and detection of latch-up using a laser scanning microscope 失效
    使用激光扫描显微镜诱导和检测闩锁

    公开(公告)号：US06350982B1

    公开(公告)日：2002-02-26

    申请号：US09383725

    申请日：1999-08-26

    申请人： Victoria J. Bruce ,  Michael R. Bruce

    发明人： Victoria J. Bruce ,  Michael R. Bruce

    IPC分类号： H01L3100

    CPC分类号： H01L31/03046 ,  H01L31/0304 ,  H01L31/108 ,  Y02E10/544

    摘要： According to one example embodiment, a latch-up condition in a semiconductor device is detected using a method involving use of a laser beam to scan through the backside of the semiconductor device and to ascertain an intensity threshold that is known to cause latch-up conditions. The intensity of the beam is altered and applied to designated regions within the semiconductor device to create latch-up at certain regions but not other regions. A latch-up condition present at a designated region is then detected using conventional microscopy equipment.

    摘要翻译： 根据一个示例性实施例，使用包括使用激光束扫描穿过半导体器件的背面并且确定已知导致闩锁状态的强度阈值的方法来检测半导体器件中的闩锁状态 。 改变光束的强度并将其施加到半导体器件内的指定区域，以在某些区域而不是其它区域产生闩锁。 然后使用传统的显微镜设备检测存在于指定区域的闭锁状态。