Abstract:
An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes an n-type semiconductor compound that is transparent in a visible ray region and represented by Chemical Formula 1, and a p-type semiconductor compound having a maximum absorption wavelength in a wavelength region of about 500 nm to about 600 nm of a visible ray region.
Abstract:
An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region. The transparent second compound has an absorption coefficient in a thin film state of less than or equal to about 0.1×105 cm−1 in a wavelength region of about 450 nm to about 700 nm.
Abstract translation:有机光电子器件包括彼此面对的第一电极和第二电极以及第一电极和第二电极之间的有源层,所述有源层包括第一化合物,其具有约500nm至约600nm的最大吸收波长 可见光区域和可见光区域中的透明第二化合物。 透明第二化合物在约450nm至约700nm的波长范围内具有小于或等于约0.1×10 5 cm -1的薄膜状态的吸收系数。
Abstract:
An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein a single nanopattern of the plurality of nanopatterns corresponds to a single photo-sensing device in the plurality of photo-sensing devices.
Abstract:
Example embodiments relate to an image sensor that includes a semiconductor substrate integrated with at least one photo-sensing device, an impurity-doped first light-transmitting electrode present in the semiconductor substrate, an organic photoelectric conversion layer positioned on one side of the semiconductor substrate and absorbing light in a different wavelength from the wavelength sensed by the photo-sensing device, and a second light-transmitting electrode positioned on one side of the organic photoelectric conversion layer, and an electronic device including the same.
Abstract:
A compound is represented by Chemical Formula 1: X1-T-X2 wherein T is a substituted or unsubstituted fused thiophene moiety, and each of X1 and X2 are independently an organic group including an alkenylene group and an electron withdrawing group.
Abstract:
An organic photoelectric device includes a first electrode, a metal nanolayer contacting one side of the first electrode, an active layer on one side of the metal nanolayer, and a second electrode on one side of the active layer. An image sensor includes the organic photoelectric device.
Abstract:
An organic photoelectric material may include a compound represented by the above Chemical Formula 1, and an organic photoelectric device and an image sensor including the organic photoelectric material.