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公开(公告)号：US20200284568A1
公开(公告)日：2020-09-10
申请号：US16875188
申请日：2020-05-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Bae PARK , Sung Jun PARK , Hiromasa SHIBUYA , Sung Young YUN , Gae Hwang LEE , Yong Wan JIN , Chul Joon HEO
Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same. Definitions of Chemical Formula 1 are the same as defined in the detailed description.
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公开(公告)号：US20190058143A1
公开(公告)日：2019-02-21
申请号：US16166873
申请日：2018-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Bae PARK , Gae Hwang LEE , Takkyun RO , Yong Wan JIN , Chul Joon HEO
CPC classification number: H01L51/442 , H01L27/302 , H01L27/307 , H01L27/3209 , H01L51/0046 , H01L51/4253 , H01L51/52 , H01L51/5203 , H01L2251/55 , Y02E10/549
Abstract: An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.
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73.发明申请公开(公告)号：US20190013368A1
公开(公告)日：2019-01-10
申请号：US16027456
申请日：2018-07-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chil Hee CHUNG , Sangyoon LEE , Yong Wan JIN , Kyung Bae PARK , Kwang Hee LEE
CPC classification number: H01L27/3234 , G06F3/0416 , G06K9/0004 , G06K9/00228 , G06K9/00604 , H01L27/307 , H01L27/3211 , H01L27/3213 , H01L27/323
Abstract: An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack on the substrate and including an NIR emitter configured to emit NIR light and an NIR detector. The NIR light sensor stack may be between the substrate and the OLED stack. The OLED panel may be included in one or more various electronic devices.
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公开(公告)号：US20180331143A1
公开(公告)日：2018-11-15
申请号：US16026224
申请日：2018-07-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong Wan JIN , Gae Hwang Lee , Seon-Jeong Lim , Sung Young Yun , Kwang Hee Lee
IPC: H01L27/146 , H04N1/00 , H01L27/30
CPC classification number: H01L27/14621 , H01L27/14601 , H01L27/1461 , H01L27/14634 , H01L27/14643 , H01L27/14647 , H01L27/307 , H04N1/00
Abstract: An image sensor includes a semiconductor substrate including a plurality of photo-sensing devices, a photoelectric conversion device disposed on the semiconductor substrate and absorbing the mixed light of a first color and a second color, and a color filter disposed on one side of the photoelectric conversion device and configured to selectively transmit a mixed light including a third color, and an electronic device including the image sensor is provided.
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公开(公告)号：US20180006090A1
公开(公告)日：2018-01-04
申请号：US15471289
申请日：2017-03-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Seok LEEM , Kwang Hee LEE , Tadao YAGI , Sung Young YUN , Gae Hwang LEE , Seon-Jeong LIM , Yong Wan JIN
CPC classification number: H01L27/307 , H01L51/002 , H01L51/0046 , H01L51/0047 , H01L51/0053 , H01L51/0058 , H01L51/006 , H01L51/0061 , H01L51/0062 , H01L51/0064 , H01L51/0067 , H01L51/0071 , H01L51/0072 , H01L51/4253 , H01L51/4293 , H01L51/44 , H01L2251/303 , Y02E10/549
Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.
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Patent Agency Ranking
公开(公告)号：US20180000387A1
公开(公告)日：2018-01-04
申请号：US15637628
申请日：2017-06-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chul Joon HEO , Kyung Bae PARK , Takkyun RO , Kwang Hee LEE , Dongseon LEE , Yong Wan JIN , Moon Gyu HAN
IPC: A61B5/1455 , A61B5/0295 , A61B5/145 , A61B5/026
Abstract: Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.
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公开(公告)号：US20170250227A1
公开(公告)日：2017-08-31
申请号：US15593631
申请日：2017-05-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Bae PARK , Satoh RYUICHI , Gae Hwang LEE , Kwang Hee LEE , Dong-Seok LEEM , Yong Wan JIN , Tadao YAGI , Chul Joon HEO
CPC classification number: H01L27/307 , H01L25/167 , H01L27/30 , H01L27/302 , H01L33/06 , H01L51/0046 , H01L51/0068 , H01L51/008 , H01L51/0094 , H01L51/424 , H01L51/4246 , H01L51/4253 , H01L51/44 , H01L51/442 , H01L51/447 , Y02E10/549
Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
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公开(公告)号：US20170179179A1
公开(公告)日：2017-06-22
申请号：US15449026
申请日：2017-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae Hwang LEE , Kyu Sik KIM , Yong Wan JIN
IPC: H01L27/146 , G02B27/10
CPC classification number: H01L27/14625 , G02B27/1013 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/307 , H01L31/02327
Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.
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79.发明申请公开(公告)号：US20170092868A1
公开(公告)日：2017-03-30
申请号：US15272580
申请日：2016-09-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： TADAO YAGI , Rie SAKURAI , Hyesung CHOI , Tatsuya IMASE , Hiromasa SHIBUYA , Sung Young YUN , Gae Hwang LEE , Kwang Hee LEE , Dong-Seok LEEM , Seon-Jeong LIM , Xavier BULLIARD , Yong Wan JIN , Yeong Suk CHOI , Moon Gyu HAN
IPC: H01L51/00 , C07D345/00 , C07D333/36 , H01L27/30
CPC classification number: H01L51/0061 , C07D333/36 , C07D345/00 , H01L27/307 , H01L51/0046 , H01L51/0052 , H01L51/0054 , H01L51/006 , H01L51/0062 , H01L51/0068 , H01L51/4253 , Y02E10/549
Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer including the compound represented by Chemical Formula 1 between the first electrode and the second electrode.
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公开(公告)号：US20170062747A1
公开(公告)日：2017-03-02
申请号：US15150930
申请日：2016-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Seok LEEM , Sung Young YUN , Kwang Hee LEE , Sean-Jeong LIM , Yong Wan JIN
CPC classification number: H01L51/44 , H01L27/307 , H01L51/0052 , H01L51/4206 , H01L51/424 , H01L51/4273 , H01L51/441 , Y02E10/549
Abstract: An organic photoelectronic device includes an anode and a cathode facing each other, a light-absorption layer between the anode and the cathode, and a first auxiliary layer between the cathode and the light-absorption layer, the first auxiliary layer having an energy bandgap of about 3.0 eV to about 4.5 eV, and a difference between a work function of the cathode and a highest occupied molecular orbital (HOMO) energy level of the first auxiliary layer is about 1.5 eV to about 2.0 eV.
Abstract translation: 有机光电子器件包括彼此相对的阳极和阴极，阳极和阴极之间的光吸收层，以及阴极和光吸收层之间的第一辅助层，第一辅助层具有能量带隙 约3.0eV至约4.5eV，并且阴极的功函数和第一辅助层的最高占据分子轨道（HOMO）能级之间的差为约1.5eV至约2.0eV。
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