Abstract:
A main symmetrical CPW structure is formed by depositing three parallel films of a conductor on a film of a single crystal ferroelectric material. Cavities are formed by placing irises in a main CPW structure. These cavities are tuned to a dominant resonant frequency. By the application of a bias voltage to the main CPW structure with cavities, the permittivity of the film of the ferroelectric material, underneath the CPW structure, is changed. Thus the dominant resonant frequency of the filter is changed. By changing the level of the bias voltages, different dominant resonant frequencies of the filter are obtained. Thus a tunable band pass filter is obtained. With branch cavities on a CPW structure deposited on a ferroelectric film, a tunable band reject filter is obtained.
Abstract:
An electromagnetic filter has a unitary filter body defining a number of cavities. A cover for the filter body has several resonators attached to it which are located in the cavities when the cover is attached to the filter body. The cover has a recess into which a transmission line is placed. Passageways through the cover connect the transmission line with coupling mechanisms mounted on the cover adjacent the resonators. The resonators have a generally toroidal shape and the coupling mechanisms are shaped to provide the desired coupling between the transmission line and the resonators. An adjustable capacitor attached to the coupling loop has a passageway through its housing to eliminate moisture from the capacitor. The resonator and cavities may be tuned by use of a tuning mechanism which is also designed to minimize moisture which might prevent movement of the tuner during tuning.
Abstract:
A microwave filter has at least one resonator with a cavity and a conducting or superconducting loading element inside the cavity. The resonator also has first and second tuning screws at right angles and a mode coupling screw at 45.degree. angles to both tuning screws. This filter can achieve a high Q in a small size.
Abstract:
A transmission line filter comprises four resonators (100, 200, 300, 400), and transmission zeroes can be added to the transfer function of the filter using a known phasing coupling technique using a transmission line (53, 54) coupled between two resonators. The location of the transmission zeroes can be varied using control circuits (A,B). Each control circuit comprises a series coupled inductance (55, 58) and capacitance (56, 59) forming a resonance circuit, the resonance frequency of which can be varied using a variable d.c. voltage (V.sub.1, V.sub.2). The inductance of each control circuit is arranged adjacent its respective transmission line so that the two are weakly electromagnetically coupled. By supplying the variable voltage to the resonance circuits, normal operation of the phasing coupling is affected, thereby varying the location of the transmission zero. One or more control circuits can be provided for filters having transmission zeroes in their transfer function which need to be varied. The provision of these control circuits allow transmission zeroes to be selected in situ, rather than solely during manufacture.
Abstract:
A bandpass filter for the transmission of signals within a predetermined frequency bandwidth having a center frequency, which provides for substantial attenuation of the harmonic components of the center frequency of the filter. The bandpass filter includes at least one resonator comprising a strip conductor and a ground conductor formed on the surface of a dielectric substrate. The strip conductor is capacitively coupled to the ground conductor so as to substantially transmit the harmonic components of the center frequency of the filter to ground.
Abstract:
A high-frequency filter of the type having a plurality of resonators open at least at one end thereof, a dielectric board forming an input/output coupling and an interstage coupling, and a case for holding therein the resonators and the dielectric board, wherein the dielectric board is made of a ceramic having a critical stress intensity factor K.sub.1c of not less than 5 MPa.multidot.m.sup.1/2 and a dielectric dissipation factor tan. .delta. of not exceeding 1% in a working frequency band of said high-frequency filter, and wherein electrodes are provided on the dielectric board to form an input/output coupling capacity and an interstage coupling capacity. The high-frequency filter of the foregoing construction has the advantage of an excellent mechanical strength which is capable of withstanding severe mechanical loads such as falling impacts or various stresses.
Abstract:
A semiconductor mounting and matching assembly capable of performing over a frequency range to 20 GHz and higher comprising a coaxial transmission line having a first portion with a first end for receiving radio-frequency signals and providing an input impedance and a second portion with a second signal output end providing a termination characteristic impedance. A semiconductor diode which is hermetically sealed within and removable with the second portion is mounted at the second end and has a load resistance terminating the transmission line. The transmission line has a plurality of sections for providing elements of a network which transforms the input impedance and matches the termination characteristic impedance of the second end of the transmission line to the load resistance of the semiconductor device. The elements of the network are provided by the configurations and discontinuities of the sections of the transmission line and the capacitive and inductive properties provided by the semiconductor device, whereby the network incorporates therein the parasitic reaction elements of the semiconductor device so that said assembly transmits radio-frequency signals from its input end to the semiconductor device at its output end with low reflection and attenuation over a wide-band of frequencies.
Abstract:
A high bandwidth transversal filter is described having an input impedance matching network, a tapped delay line, a plurality of weighting amplifiers, a distributed summing circuit, and an output impedance matching network. The delay line is implemented with a transmission line. The input impedance of this transversal filter depends on the inductance and capacitance of the transmission line and the capacitance of the inputs of each of the FET's used as weighting amplifiers. The gates of the FET's provide high impedance low loss taps of the delay line. The weighting is accomplished by either varying the drain current of the FET's or by using capacitive voltage dividers to apportion the tapped signals. The resulting weighted signals are applied to a distributed summing circuit which provides both high bandwidth summing and additional delays. This summer is also implemented with a tapped transmission line. The output impedance of this transversal filter depends on the inductance and capacitance of the summing line and the capacitance of the output of each FET. The parameters of the transmission lines constituting the input delay line and the distributed summer can be selected to provide broadband impedance matching for the input and output of the filter. The FET's thus act as high impedance taps, as weighting amplifiers, and as part of the input and output impedance matching networks.
Abstract:
A helical resonator filter with increased bandwidth is provided for use as a wideband bandpass filter. The device is composed of a series of helical resonators cells cascaded with non-uniform cell spacing, thus providing an increase in coupling coefficients between cells. The increased bandwidth is thereby obtained without placing a burden on the exterior housing dimensions relative to a normally spaced narrow bandwidth filter and without substantially reducing the unloaded Q's or increasing insertion losses.
Abstract:
A noise suppression device for noisy transmission wires in a motor vehicle including a first low impedance element connected to an arbitrarily chosen point on the noisy wire and a second low impedance element connected at the nodal point of the standing wave of the noise current on the noisy wire.