公开(公告)号：US20090052038A1

公开(公告)日：2009-02-26

申请号：US12222250

申请日：2008-08-06

申请人： Long Hsu ,  Cheng-Hsien Liu ,  Sheng-Yang Tseng ,  Chung-Cheng Chou ,  William Wang ,  Fung-Hsu Wu ,  Chen Peng ,  Ta-Yuan Lee

发明人： Long Hsu ,  Cheng-Hsien Liu ,  Sheng-Yang Tseng ,  Chung-Cheng Chou ,  William Wang ,  Fung-Hsu Wu ,  Chen Peng ,  Ta-Yuan Lee

IPC分类号： G02B27/42

CPC分类号： G02B21/32

摘要： An apparatus and a method for changing optical tweezers are provided. The apparatus includes a diffractive optical element (DOE), a mask unit and an objective lens. The DOE includes a plurality of phase delay patterns. The mask unit includes a plurality of mask patterns that correspond to the phase delay patterns, respectively, wherein at least a portion of the mask patterns are complementary. A laser beam passing through each phase diffractive pattern correspondingly passes through each mask pattern to generate a compound diffractive pattern. The objective lens receives the compound diffractive pattern and focuses it on an examining object to form an optical tweezers.

摘要翻译： 提供了一种用于改变光学镊子的设备和方法。 该装置包括衍射光学元件（DOE），掩模单元和物镜。 DOE包括多个相位延迟模式。 掩模单元包括分别对应于相位延迟图案的多个掩模图案，其中至少一部分掩模图案是互补的。 通过每个相位衍射图案的激光束相应地通过每个掩模图案以产生复合衍射图案。 物镜接收复合衍射图案并将其聚焦在检查对象上以形成光学镊子。

公开(公告)号：US20080229161A1

公开(公告)日：2008-09-18

申请号：US11686996

申请日：2007-03-16

申请人： Cheng-Hung Lee ,  Ching-Wei Wu ,  Chung-Cheng Chou ,  Hung-Jen Liao

发明人： Cheng-Hung Lee ,  Ching-Wei Wu ,  Chung-Cheng Chou ,  Hung-Jen Liao

IPC分类号： G11C29/00

CPC分类号： G11C29/50 ,  G11C29/70 ,  G11C29/80 ,  G11C2029/5004 ,  H01L22/22 ,  H01L27/1052

摘要： Memory products and manufacturing methods thereof. A memory product comprises at least one memory cell and at least one redundancy memory cell. The memory cell and the redundancy memory cell have different physical or electronic properties. The redundancy memory cells are used as repair schemes for the memory cell if the memory cell is determined to have experienced Vccmin failure.

摘要翻译： 内存产品及其制造方法。 存储器产品包括至少一个存储器单元和至少一个冗余存储单元。 存储单元和冗余存储单元具有不同的物理或电子特性。 如果确定存储器单元已经经历Vccmin故障，则冗余存储器单元被用作存储器单元的修复方案。

公开(公告)号：US20080050999A1

公开(公告)日：2008-02-28

申请号：US11844413

申请日：2007-08-24

申请人： BOW-YI JANG ,  William Wang ,  Chung-Cheng Chou ,  Chen Peng ,  Ta-Yuan Lee ,  Lin Hsiao

发明人： BOW-YI JANG ,  William Wang ,  Chung-Cheng Chou ,  Chen Peng ,  Ta-Yuan Lee ,  Lin Hsiao

IPC分类号： A63H3/36

CPC分类号： A63H13/005 ,  A63H3/365 ,  A63H3/40 ,  A63H3/445 ,  B25J11/0015

摘要： The invention discloses a device for animating facial expression. The device includes at least one resilient member and at least one actuator. The resilient member is regarded as a facial feature on a face, and the resilient member has a first end and a second end. The first end of the resilient member is rotatably and/or movably attached onto the face. The actuator is used for actuating the first end of the resilient member to rotate, so that the facial feature is capable of exhibiting various facial expressions on the face, wherein the facial feature can be eyebrow, upper eyelid, lower eyelid, upper lip or lower lip.

摘要翻译： 本发明公开了一种用于动画面部表情的装置。 该装置包括至少一个弹性构件和至少一个致动器。 弹性构件被认为是面部上的面部特征，并且弹性构件具有第一端和第二端。 弹性构件的第一端可旋转地和/或可移动地附接到面上。 所述致动器用于致动所述弹性构件的第一端旋转，使得所述面部特征能够在所述面部上展现各种面部表情，其中所述面部特征可以是眉毛，上眼睑，下眼睑，上唇或下部 唇。

公开(公告)号：US20080028351A1

公开(公告)日：2008-01-31

申请号：US11493405

申请日：2006-07-26

申请人： Chung-Cheng Chou ,  Cheng-Hung Lee

发明人： Chung-Cheng Chou ,  Cheng-Hung Lee

IPC分类号： G06F17/50

CPC分类号： G06F17/5045 ,  G06F17/5068

摘要： A memory macro includes a first set of cells disposed in a first area of a memory array, and a second set of cells, which differ from the first set of cells in physical dimensions, disposed at an edge of the first area for improving robustness of the cells at the edge of the memory array.

摘要翻译： 存储器宏包括设置在存储器阵列的第一区域中的第一组单元，以及设置在第一区域的边缘处的与物理尺寸的第一组单元不同的第二组单元，用于改善第一区域的鲁棒性 存储器阵列边缘的单元格。

公开(公告)号：US20070153032A1

公开(公告)日：2007-07-05

申请号：US11618962

申请日：2007-01-02

申请人： CHUNG-CHENG CHOU ,  William Wang

发明人： CHUNG-CHENG CHOU ,  William Wang

IPC分类号： B41J2/195

CPC分类号： B41J2/14153

摘要： The invention provides a microinjection apparatus for a fluid. The microinjection apparatus includes a substrate, a manifold, a fluid chamber, a dummy chamber, a detecting device, and a pair of parallel conductive plates. The manifold is formed on the substrate and supplies the fluid chamber and the dummy chamber, also formed on the substrate, with the fluid. In addition, the pair of parallel conductive plates are formed on a pair of opposite inner walls of the dummy chamber, and electrically connected to the detecting device. By applying the pair of parallel conductive plates and the detecting device provided in the invention, the size of the fluid chamber and the fluid-filled condition relative to the fluid chamber can be indirectly detected by non-destructive testing. Furthermore, the cost of and the time of testing also can be prominently saved.

摘要翻译： 本发明提供一种用于流体的显微注射装置。 显微注射装置包括基板，歧管，流体室，虚拟室，检测装置和一对平行导电板。 歧管形成在基板上，并且还将流体室和也在基板上形成的虚拟室与流体供应。 此外，一对平行导电板形成在虚拟室的一对相对的内壁上，并与检测装置电连接。 通过应用本发明中提供的一对平行导电板和检测装置，可以通过非破坏性测试来间接地检测流体室的尺寸和相对于流体室的流体填充状态。 此外，测试的成本和时间也可以显着地节省。

公开(公告)号：US20070063761A1

公开(公告)日：2007-03-22

申请号：US11231035

申请日：2005-09-20

申请人： Chung-Cheng Chou ,  Chien-Hua Huang

发明人： Chung-Cheng Chou ,  Chien-Hua Huang

IPC分类号： G05F1/10

CPC分类号： H02M3/07

摘要： A method and system is disclosed for an improved charge pump system. The system comprises one or more charge pump devices for providing an output voltage, a ring oscillator coupled with the charge pump devices for providing an oscillator output, and a multiple level detection device for detecting the output voltage and controlling the charge pump for stabilizing the output voltage.

摘要翻译： 公开了一种改进的电荷泵系统的方法和系统。 该系统包括用于提供输出电压的一个或多个电荷泵装置，与电荷泵装置耦合以提供振荡器输出的环形振荡器，以及用于检测输出电压并控制电荷泵稳定输出的多电平检测装置 电压。

公开(公告)号：US20060284932A1

公开(公告)日：2006-12-21

申请号：US11372964

申请日：2006-03-09

申请人： Hung-Sheng Hu ,  Wei-Lin Chen ,  In-Yao Lee ,  Tsung-Ping Hsu ,  Chung-Cheng Chou ,  ShangShi Wu

发明人： Hung-Sheng Hu ,  Wei-Lin Chen ,  In-Yao Lee ,  Tsung-Ping Hsu ,  Chung-Cheng Chou ,  ShangShi Wu

IPC分类号： B41J2/04

CPC分类号： B41J2/14137 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49401

摘要： A fluid injector and method of manufacturing the same. The fluid injector comprises a base, a first through hole, a bubble generator, a passivation layer, and a metal layer. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The bubble generator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The metal layer defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.

摘要翻译： 一种流体注射器及其制造方法。 流体注射器包括底座，第一通孔，气泡发生器，钝化层和金属层。 底座包括一个腔室和一个表面。 第一通孔与腔室连通，并设置在基座中。 气泡发生器设置在靠近第一通孔的表面上，并且位于室外。 钝化层设置在表面上。 金属层限定第二通孔，并且设置在室外的钝化层上。 第二通孔与第一通孔连通。

公开(公告)号：US07142043B2

公开(公告)日：2006-11-28

申请号：US10909729

申请日：2004-08-02

申请人： Chung-Cheng Chou

发明人： Chung-Cheng Chou

IPC分类号： G05F1/10

CPC分类号： G11C8/08 ,  G11C5/147

摘要： The present disclosure is directed toward regulation of voltage for semiconductor memories. In an embodiment, a circuit for providing a controlled voltage level comprises a PMOS transistor coupled to a first voltage coupler (VPP), the gate of the PMOS transistor being coupled to the drain of the PMOS transistor; a MOS sub-threshold current source, coupled to a second voltage coupler (ground); and a bias independent current source coupled to the MOS sub-threshold current source and the PMOS transistor intermediate the MOS sub-threshold current source and the PMOS transistor. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

摘要翻译： 本公开涉及用于半导体存储器的电压的调节。 在一个实施例中，用于提供受控电压电平的电路包括耦合到第一电压耦合器（V PP PP）的PMOS晶体管，PMOS晶体管的栅极耦合到PMOS晶体管的漏极; 耦合到第二电压耦合器（接地）的MOS子阈值电流源; 以及耦合到MOS子阈值电流源的偏置独立电流源和位于MOS子阈值电流源和PMOS晶体管之间的PMOS晶体管。 要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US20060092231A1

公开(公告)日：2006-05-04

申请号：US11265050

申请日：2005-11-02

申请人： Chung-Cheng Chou ,  Tsung-Ping Hsu ,  Shang-Shi Wu

发明人： Chung-Cheng Chou ,  Tsung-Ping Hsu ,  Shang-Shi Wu

IPC分类号： B41J2/05

CPC分类号： B41J2/1631 ,  B41J2/1433 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2002/1437

摘要： A fluid injection device. The device includes a substrate, a chamber formed in the substrate, and a structural layer covering the substrate and the chamber, wherein the structural layer covering the chamber has two regions with different thicknesses, and at least two nozzles pass through the two structural layer regions respectively and connected to the chamber. The method of fabricating the above fluid injection device is also disclosed.

摘要翻译： 流体注射装置。 该装置包括基板，形成在基板中的腔室和覆盖基板和腔室的结构层，其中覆盖腔室的结构层具有不同厚度的两个区域，并且至少两个喷嘴穿过两个结构层区域 分别连接到腔室。 还公开了制造上述流体注射装置的方法。

公开(公告)号：US20050248976A1

公开(公告)日：2005-11-10

申请号：US10840098

申请日：2004-05-06

申请人： Chien-Hua Huang ,  Chung-Cheng Chou

发明人： Chien-Hua Huang ,  Chung-Cheng Chou

IPC分类号： G11C7/12 ,  G11C11/24 ,  G11C11/4094 ,  G11C29/50

CPC分类号： G11C29/50016 ,  G11C7/12 ,  G11C11/401 ,  G11C11/4094 ,  G11C29/50

摘要： A circuit operable to measure leakage current in a Dynamic Random Access Memory (DRAM) is provided comprising a plurality of DRAM bit cell access transistors coupled to a common bit line, a common word line, and a common storage node, wherein said access transistors may be biased to simulate a corresponding plurality of inactive bit cells of a DRAM; and a current mirror in communication with the common storage node operable to mirror a total leakage current from said plurality of bit cell access transistors when the access transistors are biased to simulate the inactive bit cells.

摘要翻译： 提供了可操作以测量动态随机存取存储器（DRAM）中的泄漏电流的电路，其包括耦合到公共位线，公共字线和公共存储节点的多个DRAM位单元存取晶体管，其中所述存取晶体管可以 被偏置以模拟DRAM的对应的多个非活动位单元; 以及与公共存储节点通信的电流镜，可操作以当存取晶体管被偏置以模拟非活动位单元时，来自所述多个位单元存取晶体管的总泄漏电流。