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81.发明授权Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system 失效辐射检测装置及其制造方法以及放射线摄像系统公开(公告)号：US07521684B2
公开(公告)日：2009-04-21
申请号：US11723462
申请日：2007-03-20
IPC分类号： G01J1/00
CPC分类号： H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source/drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source/drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element. Also, the invention provides a radiation image pickup apparatus including a photoelectric conversion element having a wavelength converter for converting a radiation into a visible light, a pixel electrode for converting the visible light into an electric signal, an insulating layer, and a semiconductor layer; and a transistor for controlling reading of the electric signal converted by the photoelectric conversion element, the photoelectric conversion element being laminated on the wavelength converter side of the transistor, the pixel electrode being divided for each of plural pixels, and the semiconductor layer extending over the plural pixels.
摘要翻译： 本发明提供一种放射线检测装置，具有叠层在开关TFT上的辐射转换元件，包括开关TFT的栅电极; 第一绝缘层，第一半导体层和欧姆接触层，依次层叠在栅电极上; 以及层叠在欧姆接触层上的开关TFT的源极/漏极，其全部构成开关TFT; 和辐射转换元件的下电极，其形成在与源/漏电极相同的层上; 第二绝缘层，第二半导体层和第二欧姆接触层，它们依次层压在下电极上; 以及用于向辐射转换元件施加偏压的偏置布线。 另外，本发明提供了一种包括具有将辐射转换为可见光的波长转换器的光电转换元件，将可见光转换为电信号的像素电极，绝缘层和半导体层的放射线摄像装置; 以及晶体管，用于控制由所述光电转换元件转换的电信号的读取，所述光电转换元件层叠在所述晶体管的波长转换器侧，所述像素电极被分割为多个像素，并且所述半导体层延伸越过 多个像素。
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公开(公告)号：US07394101B2
公开(公告)日：2008-07-01
申请号：US11297414
申请日：2005-12-09
CPC分类号： G02F1/136204 , H01L27/0288 , H01L27/124 , H01L27/1255 , H01L27/14609
摘要： In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.
摘要翻译： 在具有形成在基板上的多个薄膜晶体管和矩阵布线的半导体器件中，矩阵布线通过电阻器电连接，以防止在面板制造过程中的静电破坏并提高制造产量。
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公开(公告)号：US20070295966A1
公开(公告)日：2007-12-27
申请号：US11750719
申请日：2007-05-18
IPC分类号： H01L29/04
CPC分类号： H01L27/14665
摘要： A conversion apparatus comprises a pixel region, on a substrate, including a plurality of pixels arranged in a matrix, each pixel having a conversion element that converts radiation into electric signals and a switching element, wherein the switching element has a structure comprising a gate electrode, a first insulating layer, a second insulating layer and a semiconductor layer from the substrate side in this order, and the conversion element has a structure comprising a bottom electrode, the second insulating layer and a semiconductor layer on the first insulating layer from the substrate side in this order.
摘要翻译： 转换装置包括在基板上的像素区域，包括以矩阵排列的多个像素，每个像素具有将辐射转换成电信号的转换元件和开关元件，其中开关元件具有包括栅电极 第一绝缘层，第二绝缘层和半导体层，并且转换元件具有包括底部电极，第二绝缘层和第一绝缘层上的与衬底的半导体层的结构 这个顺序。
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公开(公告)号：US07282719B2
公开(公告)日：2007-10-16
申请号：US11227149
申请日：2005-09-16
CPC分类号： H01L27/14663 , H01L27/14692 , H04N5/32 , H04N5/374
摘要： A reset method of a conversion element is improved, and the simplification of wiring and the improvement of an open area ratio of the conversion element by means of an image pickup apparatus including a plurality of pixels arranged on an insulating substrate, each of the pixels including a conversion element, a first switching element connected to the conversion element in order to transfer an electric signal obtained by the conversion element, and a second switching element connected to the conversion element in order to reset the conversion element by giving constant potential to the conversion element, wherein the second switching element includes a gate electrode, and a source electrode and a drain electrode, and one of the source electrode and the drain electrode is electrically connected to the gate electrode.
摘要翻译： 改进了转换元件的复位方法，并且通过包括布置在绝缘基板上的多个像素的图像拾取装置，简化布线和改善转换元件的开口面积比，每个像素包括 转换元件，连接到转换元件以便传送由转换元件获得的电信号的第一开关元件和连接到转换元件的第二开关元件，以便通过给转换元件赋予恒定电位来复位转换元件 元件，其中所述第二开关元件包括栅极，以及源极和漏极，并且所述源电极和所述漏电极中的一个电连接到所述栅电极。
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公开(公告)号：US07235789B2
公开(公告)日：2007-06-26
申请号：US11196474
申请日：2005-08-04
IPC分类号： H01L27/00
CPC分类号： H04N5/35563 , G01T1/2018 , H04N5/2351 , H04N5/32 , H04N5/3745
摘要： This invention has as its object to realize a radiation image sensing apparatus which can adjust (AEC-controls) the amount of incoming light or dose without requiring high-speed driving. Since a second photoelectric conversion element (108) which is used to detect the total dose of radiation that enters a conversion unit is formed independently of pixels having first conversion elements (101) that are formed in the conversion unit on a single substrate, the need for reading out the outputs from the first conversion elements (101) at high speed for the purpose of adjustment of the dose of incoming radiation can be obviated, and another sensor used to adjust the dose need not be added, thus simplifying the structure of a radiation image sensing apparatus.
摘要翻译： 本发明的目的是实现一种可以在不需要高速驱动的情况下调节（AEC控制）入射光或剂量的辐射图像感测装置。 由于独立于在单个基板上形成在转换单元中的具有第一转换元件（101）的像素独立地形成用于检测进入转换单元的辐射的总剂量的第二光电转换元件（108），所以需要 为了调整入射辐射的剂量，高速读出第一转换元件（101）的输出可以被消除，而不需要添加用于调节剂量的另一个传感器，从而简化了 辐射图像传感装置。
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86.发明授权Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system 有权辐射检测装置及其制造方法以及放射线摄像系统公开(公告)号：US07214945B2
公开(公告)日：2007-05-08
申请号：US10455457
申请日：2003-06-06
IPC分类号： G01J1/00
CPC分类号： H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A radiation detecting apparatus having a radiation conversion element arranged on a switch TFT is provided. The apparatus includes a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are arranged on the gate electrode in order; and a source/drain electrode of the switch TFT arranged on the ohmic contact layer, which all constitute the switch TFT. The apparatus also includes a lower electrode of the radiation conversion element formed from the same layer as the source/drain electrode, a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are arranged on the lower electrode in order, and a bias wiring for applying a bias voltage to the radiation conversion element.
摘要翻译： 提供具有布置在开关TFT上的辐射转换元件的放射线检测装置。 该装置包括开关TFT的栅电极; 第一绝缘层，第一半导体层和欧姆接触层，其依次布置在栅电极上; 以及布置在欧姆接触层上的开关TFT的源极/漏极，其全部构成开关TFT。 该装置还包括由与源/漏电极相同的层形成的辐射转换元件的下电极，第二绝缘层，第二半导体层和第二欧姆接触层，其按顺序设置在下电极上 以及用于向辐射转换元件施加偏置电压的偏置布线。
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公开(公告)号：US20060255239A1
公开(公告)日：2006-11-16
申请号：US11486102
申请日：2006-07-14
IPC分类号： H01J40/14
CPC分类号： H01L27/14643 , H01L27/14676
摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
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公开(公告)号：US20060138334A1
公开(公告)日：2006-06-29
申请号：US11336774
申请日：2006-01-23
申请人： Chiori Mochizuki
发明人： Chiori Mochizuki
IPC分类号： G01T1/24
CPC分类号： G01T1/2928
摘要： A radiation detecting apparatus including a plurality of pixels, each pixel including a conversion element configured to convert radiation into an electric signal, a resetting element configured to reset the conversion element by applying a predetermined voltage to the conversion element, and a signal transfer element connected to the conversion element. The signal transfer element and the resetting element are connected to the same electrode of the conversion element.
摘要翻译： 一种包括多个像素的放射线检测装置，每个像素包括被配置为将辐射转换为电信号的转换元件，复位元件，其被配置为通过向所述转换元件施加预定电压来复位所述转换元件;以及信号传送元件， 转换元素。 信号传送元件和复位元件连接到转换元件的同一电极。
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89.发明申请公开(公告)号：US20050263709A1
公开(公告)日：2005-12-01
申请号：US10954194
申请日：2004-10-01
IPC分类号： G01T1/20 , A61B6/00 , G01T1/24 , H01L27/14 , H01L27/146 , H01L31/036 , H04N5/32
CPC分类号： H01L27/14643 , H01L27/14676
摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
摘要翻译： 在图像拾取装置中，将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态 底物。 图像拾取装置包括栅极配线，多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线，多个像素的薄膜晶体管的源电极或漏电极布置在其上 在与该方向不同的方向上共同连接在基板上。 保护层布置在薄膜晶体管，栅极布线和信号布线上。 保护层至少在同一时间形成。 然后，在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。
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公开(公告)号：US06967332B2
公开(公告)日：2005-11-22
申请号：US10366728
申请日：2003-02-14
CPC分类号： H04N5/35563 , G01T1/2018 , H04N5/2351 , H04N5/32 , H04N5/3745
摘要： This invention has as its object to realize a radiation image sensing apparatus which can adjust (AEC-controls) the amount of incoming light or dose without requiring high-speed driving. Since a second photoelectric conversion element (108) which is used to detect the total dose of radiation that enters a conversion unit is formed independently of pixels having first conversion elements (101) that are formed in the conversion unit on a single substrate, the need for reading out the outputs from the first conversion elements (101) at high speed for the purpose of adjustment of the dose of incoming radiation can be obviated, and another sensor used to adjust the dose need not be added, thus simplifying the structure of a radiation image sensing apparatus.
摘要翻译： 本发明的目的是实现一种可以在不需要高速驱动的情况下调节（AEC控制）入射光或剂量的辐射图像感测装置。 由于独立于在单个基板上形成在转换单元中的具有第一转换元件（101）的像素独立地形成用于检测进入转换单元的辐射的总剂量的第二光电转换元件（108），所以需要 为了调整入射辐射的剂量，高速读出第一转换元件（101）的输出可以被消除，而不需要添加用于调节剂量的另一个传感器，从而简化了 辐射图像传感装置。
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