摘要:
A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.
摘要:
A defect detecting apparatus including an illumination system for radiating a light of a plane wave linearly to a substrate having repetitive patterns of different pitches; a focusing optical system for focusing a light image reflected from the substrate thus illuminated by the illumination system; a spatial filter disposed intermediate the focusing optical system so as to shield a diffraction light from repetitive patterns of a small pitch on the substrate; a detector for detecting the light image formed by the focusing optical system; an erasing means for comparing and erasing signals which are generated on the basis of repetitive patterns of a large pitch and obtained through the spatial filter, out of signals detected by the detector; and a defect detecting means for detecting defects on the substrate in accordance with a signal detected by the detector, as well as a method applied to the said apparatus.
摘要:
An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a detection optical unit which detects light from the specimen illuminated by the laser with an image sensor while the table is moving, and a signal processor. The signal processor processes a signal outputted from the image sensor of the detection optical unit and converted to a digital signal and extracts defects of the specimen by comparing the converted digital signal with a reference digital signal. A display unit displays information of defects extracted by the signal processor.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concave-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concavo-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
The present invention is characterized by the following: incident illumination and oblique illumination are performed on a scratch and a foreign material, which have been made on a surface of a polished or a ground insulating layer, with substantially the same luminous flux; and on the basis of a correlation such as a ratio of intensity of scattered light generated by the shallow scratch and the foreign material between the incident illumination and the oblique illumination, the shallow scratch is discriminated from the foreign material.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concavo-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concavo-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
An inspection apparatus projects a laser beam on the surface of a SOI wafer and detects foreign matter on and defects in the surface of the SOI wafer by receiving scattered light reflected from the surface of the SOI wafer. The wavelength of the laser beam used by the inspection apparatus is determined so that a penetration depth of the laser beam in a Si thin film may be 10 nm or below to detect only foreign matter on and defects in the outermost surface and not to detect foreign matter and defects in a BOX layer. Only the foreign matter on and defects in the outermost surface layer can be detected without being influenced by thin-film interference by projecting the laser beam on the surface of the SOI wafer and receiving scattered light rays.
摘要:
In a mass production line of a semiconductor manufacturing process, foreign particle inspection method and apparatus for preventing occurrence of large quantities of defects and for keeping a necessary yield. The inspection apparatus is made up in a small-sized apparatus and disposed at inlet/outlet of processing apparatuses of the production line or to a transfer system between the processing apparatuses. The inspection apparatus includes at least one monitor for real-time sampling foreign particles possible deposited on wafer which is being carried by the transfer system, thereby enabling simplification in construction of the production line and reduction of manufacturing cost. The inspection apparatus may comprise a refractive index changeable type lens array, a spatial filter and a pattern data elimination circuit, and makes possible to conduct foreign particle inspection on repetitively-patterned portions of the wafers during transfer. With the spatial filter for eliminating repetitive data of the repetition patterns the small-sized compact inspection apparatus is capable of real-time inspecting the foreign particles on the wafers at a high speed.