Map generation apparatus, map generation method, moving method for moving body, and robot apparatus
    1.
    发明授权
    Map generation apparatus, map generation method, moving method for moving body, and robot apparatus 有权
    地图生成装置,地图生成方法,移动体的移动方法和机器人装置

    公开(公告)号:US09224043B2

    公开(公告)日:2015-12-29

    申请号:US13824855

    申请日:2011-08-30

    摘要: Performing map construction under a crowded environment where there are a lot of people. It includes a successive image acquisition unit that obtains images that are taken while a robot is moving, a local feature quantity extraction unit that extracts a quantity at each feature point from the images, a feature quantity matching unit that performs matching among the quantities in the input images, where quantities are extracted by the extraction unit, an invariant feature quantity calculation unit that calculates an average of the matched quantities among a predetermined number of images by the matching unit as an invariant feature quantity, a distance information acquisition unit that calculates distance information corresponding to each invariant feature quantity based on a position of the robot at times when the images are obtained, and a map generation unit that generates a local metrical map as a hybrid map.

    摘要翻译: 在有很多人的拥挤的环境下进行地图建设。 它包括连续图像获取单元,其获得在机器人移动期间拍摄的图像;局部特征量提取单元,从图像中提取每个特征点处的数量;特征量匹配单元, 输入图像,其中通过提取单元提取量;不变特征量计算单元,其通过匹配单元计算预定数量的图像中的匹配量的平均值作为不变特征量;距离信息获取单元,其计算距离 基于在获取图像时的机器人的位置对应于每个不变特征量的信息,以及生成本地计量图作为混合图的地图生成单元。

    semiconductor device and process for producing the same
    2.
    发明申请
    semiconductor device and process for producing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US20070205467A1

    公开(公告)日:2007-09-06

    申请号:US11649269

    申请日:2007-01-04

    IPC分类号: H01L29/76

    摘要: A semiconductor device having a contact structure is provided. The semiconductor device includes: a conductive region; a first film and a second film which are formed over the conductive region to realize a layer; and a contact electrode which extends through the layer to the conductive region, and is formed so as to replace a portion of the layer with a portion of the contact electrode, where the portion of the layer is constituted by only the first film, only the second film, or both of a portion of the first film and a portion of the second film, and the portion of the first film occupies a major part of the portion of the layer.

    摘要翻译: 提供具有接触结构的半导体器件。 半导体器件包括:导电区域; 形成在所述导电区域上以实现层的第一膜和第二膜; 以及接触电极,该接触电极通过该层延伸到导电区域,并且形成为用该接触电极的一部分来代替该层的一部分,其中该部分仅由第一膜构成,只有 第二膜或第一膜的一部分和第二膜的一部分两者,并且第一膜的部分占该层的该部分的主要部分。

    Inspection method, apparatus and system for circuit pattern
    6.
    发明授权
    Inspection method, apparatus and system for circuit pattern 失效
    检查方法,电路图案的装置和系统

    公开(公告)号:US06480279B2

    公开(公告)日:2002-11-12

    申请号:US09832217

    申请日:2001-04-11

    IPC分类号: G01B1100

    摘要: Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.

    摘要翻译: 设置用于电路图案的检查方法,装置和系统,其中当通过使用通过照射白光形成的图像,激光束或带电粒子束来检查精细电路图案的情况下需要各种条件时, 其运行效率可以提高。 显示检查对象基板的检查对象区域,并且指定区域的指定地图画面和光学显微镜或电子束显微镜的图像并行显示,从而能够将缺陷分布和缺陷图像 同时看到。 检查条件的项目名称和显示,输入或指示检查条件内容的画面被整合,这些内容与图像平面重叠,层叠显示,并且所有项目名称均以 选项卡格式在内容的图片平面的上部。 当点击所需的项目名称时,切换画面并显示与点击的项目名称对应的内容。

    Cubic parking apparatus
    7.
    发明授权
    Cubic parking apparatus 失效
    CUBIC停车场

    公开(公告)号:US5118239A

    公开(公告)日:1992-06-02

    申请号:US568056

    申请日:1990-08-16

    申请人: Hiroshi Morioka

    发明人: Hiroshi Morioka

    IPC分类号: E04H6/22 E04H6/28

    CPC分类号: E04H6/282 E04H6/225

    摘要: The present invention relates to a cubic parking apparatus vertically formed with parking spaces in a multi-stage fashion to move a car in and out of the parking space through a pallet, in which guides and lateral guides are provided on the parking spaces and a carriage of an elevator, and a transfer device for laterally moving the pallet is provided on the carriage whereby when the pallet is delivered between the carriage and the parking space, a great torsional moment is prevented from being loaded in the carriage to simplify a construction of an elevator device. There is provided a cubic parking apparatus in which a turning device is provided which can be moved forward and backward in an approximately horizontal direction with respect to the carriage passing path, whereby a home position for moving the carriage above and below a position at which the turning device is disposed to move a car in and out of the parking space can be disposed on a suitable story, and parking spaces can be effectively secured.

    摘要翻译: 本发明涉及一种立式停车设备,其以多级的方式垂直地形成有停车位,用于通过托盘将车辆移入和离开停车空间,托盘中设有导轨和侧向导轨,托架 的电梯和用于横向移动托盘的传送装置设置在滑架上,由此当托架在托架和停车空间之间传送时,防止大的扭矩被装载在托架中,以简化托架 电梯设备。 提供了一种立体停车装置,其中设置有能够相对于滑架通过路径在大致水平方向上前后移动的转动装置,由此将滑架的上下移动的位置, 转向装置被设置成将车辆移入和离开停车位可以被布置在合适的故事上,并且可以有效地确保停车位。

    Micro pattern forming method and semiconductor device manufacturing method
    8.
    发明授权
    Micro pattern forming method and semiconductor device manufacturing method 有权
    微图案形成方法和半导体器件制造方法

    公开(公告)号:US07670759B2

    公开(公告)日:2010-03-02

    申请号:US10692722

    申请日:2003-10-27

    申请人: Hiroshi Morioka

    发明人: Hiroshi Morioka

    IPC分类号: G03F1/00 B44C1/22

    CPC分类号: G03F7/40 G03F7/427

    摘要: Photosensitive resist material is coated on a substrate and exposed and developed to form a resist pattern. The surface layer of sidewalls and a top wall of the resist pattern is etched by plasma of a mixture gas of a first gas and an SO2 gas, the first gas being at least one gas selected from a group consisting of He, Ne, Ar, Xe, Kr, CO, CO2 and N2. Resist pattern deformation and pattern collapse can be prevented while the resist pattern shrinks.

    摘要翻译: 将感光抗蚀剂材料涂覆在基材上并曝光和显影以形成抗蚀剂图案。 通过第一气体和SO 2气体的混合气体的等离子体蚀刻侧壁的表面层和抗蚀剂图案的顶壁,第一气体是选自由He,Ne,Ar, Xe,Kr,CO,CO2和N2。 可以防止抗蚀剂图案变形和图案塌陷,同时抗蚀剂图案收缩。

    Semiconductor device fabrication method
    10.
    发明授权
    Semiconductor device fabrication method 有权
    半导体器件制造方法

    公开(公告)号:US06979610B2

    公开(公告)日:2005-12-27

    申请号:US10694984

    申请日:2003-10-29

    摘要: The semiconductor device fabrication method comprises the step of forming a first insulation film 14 over a semiconductor substrate 10; the step of forming a semiconductor film 16 over the first insulation film 14; the step of forming a resist film 20 over the semiconductor film 16; the step of forming openings 21 in the resist film 20; the step of etching the semiconductor film 16 with the resist film 20 as the mask; the step of etching the first insulation film 14 with the semiconductor film 16 as the mask; and the step of etching the semiconductor substrate 10 with the first insulation film 14 as the mask to form trenches 22 in the semiconductor substrate 10. Silicon nitride film is patterned, using a mask of polysilicon film, whereby the silicon nitride film can be etched with high selectivity to the polysilicon film. Accordingly, a good pattern of the silicon nitride film can be formed. Even when micronized trenches are formed in a semiconductor substrate with silicon nitride film as a mask, the trenches can be formed in a required configuration. Thus, good element isolation regions can be formed, further micronized.

    摘要翻译: 半导体器件制造方法包括在半导体衬底10上形成第一绝缘膜14的步骤; 在第一绝缘膜14上形成半导体膜16的步骤; 在半导体膜16上形成抗蚀剂膜20的步骤; 在抗蚀剂膜20中形成开口21的步骤; 用抗蚀剂膜20作为掩模蚀刻半导体膜16的步骤; 用半导体膜16作为掩模蚀刻第一绝缘膜14的步骤; 以及利用第一绝缘膜14作为掩模蚀刻半导体衬底10的步骤,以在半导体衬底10中形成沟槽22.使用多晶硅膜的掩模对氮化硅膜进行构图,从而可以用氮化硅膜蚀刻氮化硅膜 对多晶硅膜的选择性高。 因此,可以形成氮化硅膜的良好图案。 即使在用氮化硅膜作为掩模的半导体衬底中形成微粉化的沟槽,也可以形成所需的构造。 因此,可以形成良好的元件隔离区域,进一步微粉化。