公开(公告)号：US20080025687A1

公开(公告)日：2008-01-31

申请号：US11727053

申请日：2007-03-23

申请人： Dong Ho Lee ,  Won Ki Cho ,  Jae Myung Kim ,  Kyung Il Park

发明人： Dong Ho Lee ,  Won Ki Cho ,  Jae Myung Kim ,  Kyung Il Park

IPC分类号： G02B6/10

CPC分类号： G02B6/0038 ,  G02B6/0036 ,  G02B6/0053 ,  G02B6/0061

摘要： A light guide member for guiding light may include a first pattern on a first side of the light guide member, the first pattern may include a plurality of first features extending along a first direction, and a plurality of second features extending along a second direction, wherein the first direction crosses the second direction, the first feature has a first feature size, the second feature has a second feature size, and the first feature size may be less than the second feature size.

摘要翻译： 用于引导光的导光构件可以包括在导光构件的第一侧上的第一图案，第一图案可以包括沿着第一方向延伸的多个第一特征和沿着第二方向延伸的多个第二特征， 其中所述第一方向跨越所述第二方向，所述第一特征具有第一特征尺寸，所述第二特征具有第二特征尺寸，并且所述第一特征尺寸可以小于所述第二特征尺寸。

公开(公告)号：US20080008434A1

公开(公告)日：2008-01-10

申请号：US11727054

申请日：2007-03-23

申请人： Dong Ho Lee ,  Won Ki Cho ,  Jang Hwan Hwang

发明人： Dong Ho Lee ,  Won Ki Cho ,  Jang Hwan Hwang

IPC分类号： G02B6/10

CPC分类号： G02B6/0036 ,  G02B6/0038 ,  G02B6/0053

摘要： A light guide member for guiding light incident thereon from a light source, the light guide member including a plurality of the first grooves extending along a first direction on a first side of the light guide member, a plurality of second grooves extending along a second direction on the first side of the light guide member, the first direction may cross the second direction such that the first grooves and the second grooves may form a matrix pattern on the first side of the light guide member, wherein a polygonal shaped projection is formed between every two adjacent ones of the second grooves and a corresponding two adjacent ones of the first grooves.

摘要翻译： 一种用于引导从光源入射到其上的光的导光构件，所述导光构件包括沿着所述导光构件的第一侧沿着第一方向延伸的多个所述第一凹槽，沿着第二方向延伸的多个第二凹槽 在导光构件的第一侧上，第一方向可以穿过第二方向，使得第一凹槽和第二凹槽可以在导光构件的第一侧上形成矩阵图案，其中多边形突起形成在导光构件的第一侧之间， 每两个相邻的第二槽和相应的两个相邻的第一槽。

公开(公告)号：US07037867B2

公开(公告)日：2006-05-02

申请号：US10273265

申请日：2002-10-18

申请人： Hyun Seung Yu ,  Kug Sun Hong ,  Choon Ki Lee ,  Dong Ho Lee ,  Sang Lim Lee ,  Bong Soon Chang ,  Su Jin Kim ,  Chang Kyun Lim

发明人： Hyun Seung Yu ,  Kug Sun Hong ,  Choon Ki Lee ,  Dong Ho Lee ,  Sang Lim Lee ,  Bong Soon Chang ,  Su Jin Kim ,  Chang Kyun Lim

IPC分类号： C04B35/447 ,  B28B1/00 ,  A61F2/28

CPC分类号： A61L27/12 ,  A61F2/4644 ,  A61F2002/2835 ,  A61F2310/00293 ,  A61L27/56 ,  A61L2430/02

摘要： A bone graft substitute using magnesium substituted calcium phosphate compounds and a method of manufacturing the same is provided in which the bone graft substitute is used for recovering bones damaged due to a bone fracture. The method of manufacturing a bone graft substitute includes the steps of mixing powdered calcium pyrophosphate and a magnesium included compound to thereby obtain a composition, pressure-forming the compositions to obtain a plastic body; and sintering the plastic body.

公开(公告)号：US06893944B2

公开(公告)日：2005-05-17

申请号：US10613616

申请日：2003-07-03

申请人： Dong Ho Lee ,  Noh Yeal Kwak

发明人： Dong Ho Lee ,  Noh Yeal Kwak

IPC分类号： H01L21/324 ,  H01L21/322

CPC分类号： H01L21/3225

摘要： Disclosed is a method of manufacturing a semiconductor wafer. In the present invention, a nucleation site is formed in a region deep into the wafer through low-temperature annealing process, and oxygen or precipitation material, the metallic impurity, or the like is trapped in the nucleation site through rapid thermal annealing process. As a gettering effect is improved using the rapid thermal annealing process, the concentration of the impurity on the surface of the wafer can be lowered and the reliability of the device could be improved. Further, the annealing steps can be reduced than the prior art and the productivity of the device can thus be increased.

摘要翻译： 公开了半导体晶片的制造方法。 在本发明中，通过低温退火工艺在晶片深处形成成核点，通过快速热退火处理将氧或析出物，金属杂质等捕获在成核部位。 由于使用快速热退火工艺提高了吸气效果，因此可以降低晶片表面上的杂质浓度，并且可以提高器件的可靠性。 此外，退火步骤可以比现有技术减少，因此可以提高装置的生产率。

公开(公告)号：US06248619B1

公开(公告)日：2001-06-19

申请号：US09325344

申请日：1999-06-04

申请人： Dong Ho Lee ,  Seung Woo Jin

发明人： Dong Ho Lee ,  Seung Woo Jin

IPC分类号： H01L218238

CPC分类号： H01L21/823807 ,  H01L21/823892

摘要： The president invention discloses a method of manufacturing a semiconductor device, comprising the steps of: defining a cell region for an NMOS element and a peripheral circuit region for NMOS and PMOS elements on a semiconductor substrate; forming a sacrifice oxide film and an ion barrier oxide film on the entire structure after the defining process; performing ion injection process on the cell region and the peripheral circuit region, so that a low concentration impurity injection region therein is formed; removing the ion barrier oxide film formed on the cell region and the peripheral circuit region; performing ion injection process on selected regions of the cell region and the peripheral circuit region; injecting ions for adjusting a threshold voltage into selected regions of the cell region and the peripheral circuit region; performing ion injection process on the low concentration impurity regions of the cell region and the peripheral circuit region, so that R-well region and a P-well region are formed, respectively; removing the ion barrier oxide film on the peripheral circuit region; and performing ion injection process for adjusting the threshold voltage on the cell region and the peripheral circuit region.

摘要翻译： 总裁发明公开了一种制造半导体器件的方法，包括以下步骤：在半导体衬底上限定用于NMOS元件的单元区域和用于NMOS和PMOS元件的外围电路区域; 在定义过程之后，在整个结构上形成牺牲氧化物膜和离子屏障氧化膜; 对单元区域和外围电路区域进行离子注入处理，从而形成低浓度杂质注入区域; 除去形成在电池区域和外围电路区域上的离子阻挡氧化膜; 对单元区域和外围电路区域的选定区域进行离子注入处理; 注入离子以将阈值电压调整到单元区域和外围电路区域的选定区域中; 对单元区域和外围电路区域的低浓度杂质区域进行离子注入处理，分别形成R阱区域和P阱区域; 除去外围电路区域上的离子阻挡氧化膜; 并进行用于调整单元区域和外围电路区域的阈值电压的离子注入处理。

公开(公告)号：US06188727B1

公开(公告)日：2001-02-13

申请号：US08928219

申请日：1997-09-12

申请人： Dong Ho Lee

发明人： Dong Ho Lee

IPC分类号： H04N712

CPC分类号： H04N11/044 ,  H04N19/12 ,  H04N19/132 ,  H04N19/176 ,  H04N19/18 ,  H04N19/186 ,  H04N19/43 ,  H04N19/436 ,  H04N19/44 ,  H04N19/48 ,  H04N19/51 ,  H04N19/59 ,  H04N19/61

摘要： A simplicity HDTV video decoding method includes the steps of: variable-length-decoding an input image signal, and dividing it into a luminance signal, a color difference signal and a motion vector; reverse-quantizing each of the luminance and color difference signals received, and reverse-converting it to be half in horizontal size; and storing each of the reverse-converted luminance and color difference signals in the unit of frames, and motion-compensating it by using the motion vector, thus reducing the memory and other logic circuits in half by motion-compensating each of the luminance and color difference signals, generated in parallel by an 8×4 IDCT.

摘要翻译： 简单的HDTV视频解码方法包括以下步骤：对输入图像信号进行可变长度解码，并将其分成亮度信号，色差信号和运动矢量; 对所接收的每个亮度和色差信号进行反量化，并将其逆向转换成水平尺寸的一半; 并以帧为单位存储反向转换的亮度和色差信号，并通过使用运动矢量对其进行运动补偿，从而通过运动补偿每个亮度和颜色来将存储器和其它逻辑电路减少一半 差分信号，由8x4 IDCT并行生成。