摘要:
A clip on type air freshener device having a housing with openings in walls thereof permitting air flow through a cavity in the housing. A bottle that holds a supply of fragrance bearing liquid is mounted on the housing and has a wick with a portion thereof projecting into the cavity in the housing. An open ended sleeve is mounted on housing in axial alignment with such projecting wick portion and is adjustably moveable axially along the wick selectively in one position to completely cover the wick projecting portion and in another position leave at least a major portion thereof exposed to air flow through said housing openings. The wick cover is exposed through an opening in the housing giving the user a visual indication as to the amount of wick exposed for evaporation of the fragrance during usage of the device.
摘要:
A restaurant system includes an electronic mixing tin having a waterproof double wall construction defining a mixing area. The mixing tin includes a display, a receiver, and a processor that is in data communication with the display and receiver. Data received by the mixing tin receiver may be sent to the mixing tin display. The restaurant system includes an electronic kiosk having a first display for use by a customer and a second display for use by a bartender or waiter. The kiosk includes a first input device for use by the customer. A processor is in data communication with the kiosk displays and the first input device to retrieve data from the first input device, such as a drink order, and actuate the displays. Drink recipes may be displayed on the second display or transmitted to the mixing tin to aid a bartender in mixing drinks.
摘要:
A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.
摘要:
A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.