公开(公告)号：US07276428B2

公开(公告)日：2007-10-02

申请号：US11059122

申请日：2005-02-16

申请人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac

发明人： Nicolas Daval ,  Takeshi Akatsu ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac

IPC分类号： H01L21/46 ,  H01L21/76

CPC分类号： H01L21/76254

摘要： Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer, and bonding the free surface of the second layer to a host wafer. The method also includes supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer, conducting a bond strengthening step on the structure after detachment at a temperature of less than about 800° C. to improve the strength of the bond between the second layer and the host wafer, and selectively etching the first layer portion to remove it from the structure and to expose a surface of the second layer. The implanting step includes implantation parameters chosen to minimize surface roughness resulting from detachment at the zone of weakness.

摘要翻译： 描述形成半导体结构的方法。 在一个实施例中，该技术包括提供在第一层上具有第一半导体层和第二半导体层的施主晶片，并且具有自由表面，通过第二层的自由表面注入原子物质以形成弱区的区域 第一层，并将第二层的自由表面结合到主晶片。 该方法还包括提供能量以在弱化区域分离包括主晶片，第二层和第一层的一部分的半导体结构，在小于约800℃的温度下分离后在结构上进行结合强化步骤 以提高第二层和主晶片之间的结合强度，并且选择性地蚀刻第一层部分以将其从结构上除去并暴露第二层的表面。 植入步骤包括选择的植入参数以最小化由于在弱化区域脱离而导致的表面粗糙度。

公开(公告)号：US20070104240A1

公开(公告)日：2007-05-10

申请号：US11617025

申请日：2006-12-28

申请人： Yves Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

发明人： Yves Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

IPC分类号： H01S5/00

CPC分类号： H01L21/76254 ,  H01L2221/68318

摘要： A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.

摘要翻译： 对半导体实体的制造方法进行说明。 该方法包括提供具有预定深度的弱区的施主衬底以限定薄层，并且施主衬底包括结合界面。 还提供了在其表面上包括至少一个图案的接收器衬底。 该技术还包括将接合界面处的施主衬底粘合到接收器基底上的至少一个基序上，并且提供足够的能量以将薄层的一部分从位于至少一个基序上的施主衬底分离出来，并断裂键 在薄层内。 这样提供的能量不足以破坏接合界面处的结合。 还描述了晶片的制造和使用该方法来生产适用于电子，光学或光电子应用的芯片。

公开(公告)号：US06991944B2

公开(公告)日：2006-01-31

申请号：US10915769

申请日：2004-08-10

申请人： Olivier Rayssac ,  Beryl Blondeau ,  Hubert Moriceau ,  Christelle Lagahe-Blanchard ,  Franck Fournel

发明人： Olivier Rayssac ,  Beryl Blondeau ,  Hubert Moriceau ,  Christelle Lagahe-Blanchard ,  Franck Fournel

IPC分类号： H01L21/302

CPC分类号： H01L21/2007 ,  H01L21/02032 ,  H01L21/76254 ,  Y10S438/974

摘要： This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.

摘要翻译： 本发明涉及一种用具有不同热特性的材料处理多层晶片的方法，该方法包括可产生二次缺陷的高温热处理步骤，其特征在于该方法包括在高温之前的晶片表面制备步骤 温度热处理步骤。

公开(公告)号：US20050191779A1

公开(公告)日：2005-09-01

申请号：US10863193

申请日：2004-06-07

申请人： Yves Mathieu Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

发明人： Yves Mathieu Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

IPC分类号： H01L21/762 ,  H01L21/30 ,  C12P21/06 ,  H01L21/00 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L2221/68318 ,  Y10S438/977

摘要： A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.

摘要翻译： 对半导体实体的制造方法进行说明。 该方法包括提供具有预定深度的弱区的施主衬底以限定薄层，并且施主衬底包括结合界面。 还提供了在其表面上包括至少一个图案的接收器衬底。 该技术还包括将接合界面处的施主衬底粘合到接收器基底上的至少一个基序上，并且提供足够的能量以将薄层的一部分从位于至少一个基序上的施主衬底分离出来，并断裂键 在薄层内。 这样提供的能量不足以破坏接合界面处的结合。 还描述了晶片的制造和使用该方法来生产适用于电子，光学或光电子应用的芯片。

公开(公告)号：US20050130429A1

公开(公告)日：2005-06-16

申请号：US10915769

申请日：2004-08-10

申请人： Olivier Rayssac ,  Beryl Blondeau ,  Hubert Moriceau ,  Christelle Lagahe-Blanchard ,  Franck Fournel

发明人： Olivier Rayssac ,  Beryl Blondeau ,  Hubert Moriceau ,  Christelle Lagahe-Blanchard ,  Franck Fournel

IPC分类号： H01L21/20 ,  H01L21/762 ,  H01L21/302

CPC分类号： H01L21/2007 ,  H01L21/02032 ,  H01L21/76254 ,  Y10S438/974

摘要： This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.

摘要翻译： 本发明涉及一种用具有不同热特性的材料处理多层晶片的方法，该方法包括可产生二次缺陷的高温热处理步骤，其特征在于该方法包括在高温之前的晶片表面制备步骤 温度热处理步骤。

公开(公告)号：US20050029224A1

公开(公告)日：2005-02-10

申请号：US10468223

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

IPC分类号： H01L21/02 ,  H01L21/68 ,  H01L21/762 ,  H01L21/78 ,  H01L27/12 ,  B44C1/22

CPC分类号： H01L21/7813 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/19041 ,  Y10T156/11

摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

摘要翻译： 本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于，所述界面制成使得其具有至少一个 具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。 所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

公开(公告)号：US06821376B1

公开(公告)日：2004-11-23

申请号：US10030272

申请日：2002-01-08

申请人： Olivier Rayssac ,  Hubert Moriceau ,  Bernard Aspar ,  Philippe Montmayeul

发明人： Olivier Rayssac ,  Hubert Moriceau ,  Bernard Aspar ,  Philippe Montmayeul

IPC分类号： B32B3500

CPC分类号： H01L21/67092 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68368 ,  Y10S156/941 ,  Y10T29/49822 ,  Y10T29/53683 ,  Y10T156/11 ,  Y10T156/1111 ,  Y10T156/19

摘要： A process and device for separating two semi-conductor substrate wafers along an interface. The process includes forming a cavity, and initiating separation by applying force to the interface through the cavity. The device utilizes fluid or gas, and pressure chambers, to subject adherent faces of the interface to at least one of chemical or mechanical action.

摘要翻译： 一种用于沿着界面分离两个半导体衬底晶片的工艺和装置。 该方法包括形成空腔，并且通过向界面施加力通过腔起始分离。 该装置利用流体或气体以及压力室来使界面的粘附面至少为化学或机械作用之一。

公开(公告)号：US07544265B2

公开(公告)日：2009-06-09

申请号：US11481696

申请日：2006-07-05

申请人： Pierre Rayssac, legal representative ,  Gisele Rayssac, legal representative ,  Takeshi Akatsu

发明人： Olivier Rayssac

IPC分类号： B44C1/17 ,  B29C37/02 ,  B29C35/02 ,  B32B37/06 ,  B32B37/02 ,  B32B38/18 ,  H01L21/322 ,  H01L21/324 ,  H01L21/304 ,  B44C1/22 ,  B32B37/16 ,  B32B38/08 ,  B32B38/10 ,  H01L21/42

CPC分类号： H01L21/76254 ,  H01L21/76259 ,  Y10S117/915

摘要： The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.

摘要翻译： 本发明涉及一种制造由半导体材料制成的剥离衬底的方法，该方法包括在两个衬底释放层之间产生可逆连接，其特征在于可逆连接由以第一材料为基础的连接层形成， 连接层还包括设置成便于释放衬底的第二材料的纳米颗粒聚集区，选择第一和第二材料以便即使当衬底暴露于热处理时，也可以维持可逆连接的结合能基本上恒定。