公开(公告)号：US20190386662A1

公开(公告)日：2019-12-19

申请号：US16009110

申请日：2018-06-14

Applicant: Intel Corporation

Inventor： Chia-Ching Lin ,  Sasikanth Manipatruni ,  Dmitri Nikonov ,  Ian A. Young ,  Benjamin Buford ,  Tanay Gosavi ,  Kaan Oguz ,  John J. Plombon

IPC: H03K19/18 ,  H01L43/06 ,  H03K19/0944 ,  H01F10/32 ,  H01F41/30

Abstract: An apparatus is provided to improve spin injection efficiency from a magnet to a spin orbit coupling material. The apparatus comprises: a first magnet; a second magnet adjacent to the first magnet; a first structure comprising a tunneling barrier; a third magnet adjacent to the first structure; a stack of layers, a portion of which is adjacent to the third magnet, wherein the stack of layers comprises spin-orbit material; and a second structure comprising magnetoelectric material, wherein the second structure is adjacent to the first magnet.

公开(公告)号：US20190386208A1

公开(公告)日：2019-12-19

申请号：US16009035

申请日：2018-06-14

Applicant: Intel Corporation

Inventor： Chia-Ching Lin ,  Sasikanth Manipatruni ,  Tanay Gosavi ,  Dmitri Nikonov ,  Benjamin Buford ,  Kaan Oguz ,  John J. Plombon ,  Ian A. Young

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02

Abstract: An apparatus is provided which comprises: a stack comprising a magnetoelectric (ME such as BiFeO3, (LaBi)FeO3, LuFeO3, PMN-PT, PZT, AlN, SmBiFeO3, Cr2O3, etc.) material and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, graphene, etc.); a magnet adjacent to a first portion of the TMD of the stack; a first interconnect adjacent to the magnet; a second interconnect adjacent to the ME material of the stack; and a third interconnect adjacent to a second portion of the TMD of the stack.