公开(公告)号：US08652337B1

公开(公告)日：2014-02-18

申请号：US13971468

申请日：2013-08-20

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Binquan Luan ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC: H01B13/00

CPC classification number: H01B13/06 ,  B82Y40/00 ,  G01N33/48721 ,  Y10S977/70

Abstract: A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.

Abstract translation: 提供了一种用于制造纳米器件的纳米通道的机制。 绝缘膜沉积在基底上。 纳米线在电影上图案化。 绝缘材料沉积在纳米线和薄膜上。 在绝缘材料中形成第一圆形孔作为入口，在纳米线的第一尖端上露出第一尖端。 在与第一尖端相对的纳米线的第二尖端上方形成第二圆形孔作为出口，以露出第二尖端。 纳米通道通过第一孔和第二孔中的蚀刻剂蚀刻掉纳米线而连接第一孔和第二孔。 在第一尖端的先前位置处，与纳通道相连接的第一孔附接第一储存器。 在第二个尖端的先前位置处，与第二孔相连接的第二个贮存器连接到纳米通道上。