公开(公告)号：US11879085B2

公开(公告)日：2024-01-23

申请号：US17485665

申请日：2021-09-27

Applicant: Seaborough IP I B.V.

Inventor： Michael Krames ,  Marie Anne Van de Haar

IPC: C09K11/77 ,  H01L33/50 ,  H01L31/055 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/7795 ,  C09K11/7777 ,  H01L31/055 ,  H01L33/50 ,  H01L33/502 ,  B82Y20/00 ,  B82Y40/00 ,  Y10S430/127 ,  Y10S977/00 ,  Y10S977/70 ,  Y10S977/773 ,  Y10S977/902 ,  Y10S977/932 ,  Y10S977/949

Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.

公开(公告)号：US09437809B2

公开(公告)日：2016-09-06

申请号：US14290477

申请日：2014-05-29

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01F41/30

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

Abstract translation: 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

公开(公告)号：US09222884B2

公开(公告)日：2015-12-29

申请号：US14015147

申请日：2013-08-30

Applicant: Samsung Electronics Co., Ltd. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Kyu-hyun Im ,  No-kyoung Park ,  Jae-hyun Hur ,  Sung-jee Kim ,  Ju-taek Nam ,  Seong-ho Park ,  Sang-hwa Jeong

IPC: G01N21/59 ,  G01N21/25 ,  G01N21/00 ,  B82Y40/00 ,  C01G7/00 ,  B82Y30/00

CPC classification number: G01N21/59 ,  B82Y30/00 ,  B82Y40/00 ,  C01G7/00 ,  G01N21/25 ,  G01N2021/5903 ,  Y10S977/70 ,  Y10S977/773 ,  Y10S977/81 ,  Y10S977/896 ,  Y10S977/915 ,  Y10S977/92 ,  Y10T428/2982 ,  Y10T436/20 ,  Y10T436/206664

Abstract: Provided is a hydrogen peroxide sensitive metal nanoparticle including: a metal nanoparticle including a biocompatible metal and a hydrogen peroxide reactive ion which is bonded to a surface of the metal nanoparticle and is oxidized by hydrogen peroxide.

Abstract translation: 提供了一种过氧化氢敏感性金属纳米颗粒，其包括：包含生物相容性金属和过氧化氢反应性离子的金属纳米颗粒，其结合到金属纳米颗粒的表面并被过氧化氢氧化。

公开(公告)号：US08945404B2

公开(公告)日：2015-02-03

申请号：US13738298

申请日：2013-01-10

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Binquan Luan ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC: H01B13/00 ,  H01B13/06 ,  B82Y40/00 ,  G01N33/487

CPC classification number: H01B13/06 ,  B82Y40/00 ,  G01N33/48721 ,  Y10S977/70

Abstract: A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.

Abstract translation: 提供了一种用于制造纳米器件的纳米通道的机制。 绝缘膜沉积在基底上。 纳米线在电影上图案化。 绝缘材料沉积在纳米线和薄膜上。 在绝缘材料中形成第一圆形孔作为入口，在纳米线的第一尖端上露出第一尖端。 在与第一尖端相对的纳米线的第二尖端上方形成第二圆形孔作为出口，以露出第二尖端。 纳米通道通过第一孔和第二孔中的蚀刻剂蚀刻掉纳米线而连接第一孔和第二孔。 在第一尖端的先前位置处，与纳通道相连接的第一孔附接第一储存器。 在第二个尖端的先前位置处，与第二孔相连接的第二个贮存器连接到纳米通道上。

公开(公告)号：US08900517B2

公开(公告)日：2014-12-02

申请号：US11938180

申请日：2007-11-09

Applicant: Jean-Christophe P. Gabriel ,  Philip G. Collins ,  George Gruner ,  Keith Bradley

Inventor： Jean-Christophe P. Gabriel ,  Philip G. Collins ,  George Gruner ,  Keith Bradley

IPC: G01N33/00 ,  G01N27/414 ,  G01N35/00

CPC classification number: G01N27/4146 ,  G01N2035/00158 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/84 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/902 ,  Y10S977/92 ,  Y10S977/953 ,  Y10S977/957 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T436/11

Abstract: An electronic system for selectively detecting and identifying a plurality of chemical species, which comprises an array of nanostructure sensing devices, is disclosed. Within the array, there are at least two different selectivities for sensing among the nanostructure sensing devices. Methods for fabricating the electronic system are also disclosed. The methods involve modifying nanostructures within the devices to have different selectivity for sensing chemical species. Modification can involve chemical, electrochemical, and self-limiting point defect reactions. Reactants for these reactions can be supplied using a bath method or a chemical jet method. Methods for using the arrays of nanostructure sensing devices to detect and identify a plurality of chemical species are also provided. The methods involve comparing signals from nanostructure sensing devices that have not been exposed to the chemical species of interest with signals from nanostructure sensing devices that have been exposed to the chemical species of interest.

Abstract translation: 公开了一种用于选择性地检测和识别包括纳米结构感测装置阵列的多种化学物质的电子系统。 在阵列内，在纳米结构感测装置中有至少两种用于感测的不同选择性。 还公开了用于制造电子系统的方法。 这些方法包括修改装置内的纳米结构以具有感测化学物质的不同选择性。 修饰可能涉及化学，电化学和自限制点缺陷反应。 这些反应的反应物可以使用浴法或化学喷射法提供。 还提供了使用纳米结构感测装置的阵列来检测和识别多种化学物种的方法。 该方法涉及将未暴露于感兴趣的化学物质的纳米结构感测装置的信号与已经暴露于感兴趣的化学物质的纳米结构感测装置的信号进行比较。

公开(公告)号：US08883115B2

公开(公告)日：2014-11-11

申请号：US11653189

申请日：2007-01-12

Applicant: Z. Ryan Tian

Inventor： Z. Ryan Tian

IPC: C01G23/047 ,  C01G23/00 ,  A62D3/176 ,  B01D67/00 ,  B01D71/02 ,  B82Y30/00 ,  C04B35/46 ,  C04B35/622 ,  C08K7/08 ,  A41D13/12 ,  A41D31/00 ,  A62D101/02 ,  B01J35/00 ,  H01G9/20

CPC classification number: C01G23/005 ,  A41D13/1281 ,  A41D31/0011 ,  A62D3/176 ,  A62D2101/02 ,  B01D67/0046 ,  B01D71/024 ,  B01D2323/08 ,  B01J35/004 ,  B82Y30/00 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/16 ,  C04B35/46 ,  C04B35/62259 ,  C04B2235/5252 ,  C04B2235/526 ,  C04B2235/5264 ,  C04B2235/6028 ,  C08K7/08 ,  H01G9/2031 ,  Y10S977/70 ,  Y10S977/762 ,  Y10S977/775 ,  Y10S977/902 ,  Y10S977/906 ,  Y10T428/249974 ,  Y10T428/25 ,  Y10T428/256 ,  C08L21/00

Abstract: One aspect of the present invention relates to a method for synthesizing macro-sized nanostructures. The method in one embodiment comprises the steps of mixing an amount of TiO2 powders with a volume of an alkali or alkaline solution to form a mixture, and heating the mixture at a temperature higher than 160° C. for a period of time effective to allow TiO2-containing, macro-sized nanostructures to form, wherein the TiO2-containing, macro-sized nanostructures form in an environment that has no presence of a substrate that comprises Ti. These TiO2-containing, macro-sized nanostructures can be utilized to form a free standing membrane, and/or a three-dimensional (3D) structure.

Abstract translation: 本发明的一个方面涉及一种合成大尺寸纳米结构的方法。 在一个实施方案中的方法包括以下步骤：将一定量的TiO 2粉末与一定量的碱或碱溶液混合以形成混合物，并在高于160℃的温度下加热该混合物一段有效的时间以允许 含TiO 2的大尺寸纳米结构以形成，其中含TiO 2的大尺寸纳米结构在不存在包含Ti的衬底的环境中形成。 这些含TiO 2的大尺寸纳米结构可用于形成独立的膜，和/或三维（3D）结构。

公开(公告)号：US08840863B2

公开(公告)日：2014-09-23

申请号：US12549968

申请日：2009-08-28

Applicant: Shihe Yang ,  Chenmin Liu

Inventor： Shihe Yang ,  Chenmin Liu

IPC: C01B13/14 ,  C01G25/02 ,  C01G27/02 ,  C01G23/047 ,  B01J21/06 ,  B82Y30/00 ,  B01J35/00 ,  C01B13/36 ,  B01J27/24 ,  B01J27/14 ,  B01J37/10

CPC classification number: C01G23/047 ,  B01J21/06 ,  B01J21/063 ,  B01J27/14 ,  B01J27/24 ,  B01J35/0013 ,  B01J35/004 ,  B01J37/10 ,  B82Y30/00 ,  C01B13/36 ,  C01P2002/52 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/64 ,  Y10S977/70 ,  Y10S977/762

Abstract: A method for the synthesis of nano-products, such as atomic titanium oxide wires. The method allows wires of anatase titanium oxide wires to be formed in a range of tunable diameters and aspect ratios in the nanometer and subnanometer size scales. The method also allows the titanium wires to be capped by oleic acid to enhance dispersing and solubility. The method allows the titanium wires to be surface doped with nitrogen species to enhance stability and functionality such as enhanced absorption in the visible wavelength region, which is useful for photodegradation of organic wastes in water by sunlight.

Abstract translation: 一种合成纳米产品的方法，如原子氧化钛丝。 该方法允许在纳米和亚纳米尺度尺度的可调直径和纵横比的范围内形成锐钛矿氧化钛线的线。 该方法还允许钛线被油酸封端以增强分散和溶解度。 该方法允许钛线被表面掺杂氮物质以增强稳定性和功能性，例如在可见波长区域增强的吸收，其可用于通过阳光对水中的有机废物进行光降解。

公开(公告)号：US08826529B2

公开(公告)日：2014-09-09

申请号：US12975090

申请日：2010-12-21

Applicant: Andrew Joseph Detor ,  Reed Corderman ,  Christopher Keimel ,  Marco Aimi

Inventor： Andrew Joseph Detor ,  Reed Corderman ,  Christopher Keimel ,  Marco Aimi

IPC: H05K3/10 ,  C25D7/00 ,  H05K13/04 ,  C25D5/50 ,  H01H1/00 ,  H01H59/00 ,  C25D3/56

CPC classification number: C25D7/00 ,  C25D1/003 ,  C25D3/562 ,  C25D5/02 ,  C25D5/022 ,  C25D5/48 ,  C25D5/50 ,  C25D7/123 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0052 ,  H01H2001/0084 ,  H01L2924/01079 ,  H05K13/0486 ,  H05K2201/0355 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/708 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49155

Abstract: A device includes a substrate (308) and a metallic layer (336) formed over the substrate (308) with a deposition process for which the metallic layer (336) is characterizable as having a pre-determinable as-deposited defect density. As a result of a fabrication process, the defect density of the metallic layer (336) is reduced relative to the pre-determinable as-deposited defect density of the same layer (336) or another layer having like composition and which is formed under like deposition conditions. In a related method, a substrate (308) is provided and a removable layer (330) is formed over the substrate (308). A metallic layer (336) is formed over the removable layer (330) and is patterned and etched to define a structure over the removable layer (330). The removable layer (330) is removed, and the metallic layer (336) is heated for a time beyond that necessary for bonding of a hermetic sealing cap (340) thereover.

Abstract translation: 一种器件包括通过沉积工艺形成在衬底（308）上方的衬底（308）和金属层（336），金属层（336）可以将金属层（336）表征为具有可预定的沉积缺陷密度。 作为制造工艺的结果，金属层（336）的缺陷密度相对于同一层（336）或具有类似组成的另一层的预先确定的沉积缺陷密度降低，并且形成在类似 沉积条件。 在相关方法中，提供衬底（308），并且在衬底（308）之上形成可移除层（330）。 金属层（336）形成在可移除层（330）上方并被图案化和蚀刻以限定可移除层（330）上的结构。 去除可移除层（330），并且将金属层（336）加热超过其上的气密密封盖（340）的粘合所需的时间。

公开(公告)号：US20140190932A1

公开(公告)日：2014-07-10

申请号：US13738298

申请日：2013-01-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ali Afzali-Ardakani ,  Binquan Luan ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC: H01B13/06

CPC classification number: H01B13/06 ,  B82Y40/00 ,  G01N33/48721 ,  Y10S977/70

Abstract: A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.

Abstract translation: 提供了一种用于制造纳米器件的纳米通道的机制。 绝缘膜沉积在基底上。 纳米线在电影上图案化。 绝缘材料沉积在纳米线和薄膜上。 在绝缘材料中形成第一圆形孔作为入口，在纳米线的第一尖端上露出第一尖端。 在与第一尖端相对的纳米线的第二尖端上方形成第二圆形孔作为出口，以露出第二尖端。 纳米通道通过第一孔和第二孔中的蚀刻剂蚀刻掉纳米线而连接第一孔和第二孔。 在第一尖端的先前位置处，与纳通道相连接的第一孔附接第一储存器。 在第二个尖端的先前位置处，与第二孔相连接的第二个贮存器连接到纳米通道上。

公开(公告)号：US20140170692A1

公开(公告)日：2014-06-19

申请号：US13972485

申请日：2013-08-21

Applicant: University of Rochester

Inventor： Todd D. Krauss ,  Christopher M. Evans

IPC: G01N21/64

CPC classification number: G01N21/6486 ,  B82Y40/00 ,  C01B19/007 ,  C01G11/02 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/51 ,  C01P2004/64 ,  C01P2006/60 ,  C09K11/565 ,  Y10S977/70 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/813 ,  Y10S977/824 ,  Y10S977/825 ,  Y10S977/927

Abstract: Provided are methods for making quantum nanostructures based on use of a combination of nucleation and growth precursors. The methods can be used to provide quantum nanostructures of a selected size. Also provided are quantum nanostructures, compositions comprising the quantum nanostructures, and uses of the quantum nanostructures. The quantum nanostructures can be used, for example, in imaging applications.

Abstract translation: 提供了基于使用成核和生长前体的组合制备量子纳米结构的方法。 该方法可用于提供所选尺寸的量子纳米结构。 还提供了量子纳米结构，包含量子纳米结构的组合物和量子纳米结构的用途。 量子纳米结构可用于例如成像应用中。