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81.发明授权Method of fabrication for read head having shaped read sensor-biasing layer junctions using partial milling 失效使用部分铣削的具有成形的读取传感器偏置层结的读取头的制造方法公开(公告)号：US07596854B2
公开(公告)日：2009-10-06
申请号：US11899283
申请日：2007-09-04
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is disclosed for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack.
摘要翻译： 公开了一种用于制造具有读取头传感器和硬偏置层的磁盘驱动器的读取头的方法，其中读取头在读取头传感器和硬偏置层之间具有成形结。 该方法包括提供待成形的分层晶片叠层。 没有底切的单层或多层光致抗蚀剂掩模沉积在待成形的分层晶片叠层上。 分层晶片堆叠通过铣削源的输出成形，其中成形包括部分铣削以在部分铣削范围内以形成成形接合部。 然后沉积与晶片叠层的成形结接触的硬偏压层。
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公开(公告)号：US07475471B2
公开(公告)日：2009-01-13
申请号：US11598149
申请日：2006-11-13
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A GMR read head for a magnetic head, in which the hard bias layers are fabricated immediately next to the side edges of the free magnetic layer, and such that the midplane of the hard bias layer and the midplane of the free magnetic layer are approximately coplanar. The positioning of the hard bias layer is achieved by depositing a thick hard bias seedlayer, followed by an ion milling step is to remove seed layer sidewall deposits. Thereafter, the hard bias layer is deposited on top of the thick seed layer. Alternatively, a first portion of the hard bias seed layer is deposited, followed by an ion milling step to remove sidewall deposits. A thin second portion of the seed layer is next deposited, and the hard bias layer is then deposited.
摘要翻译： 用于磁头的GMR读取头，其中硬偏置层紧紧地制造在自由磁性层的侧边缘附近，并且使得硬偏置层的中平面和自由磁性层的中平面近似共面 。 硬偏置层的定位是通过沉积厚的硬偏置层层来实现的，随后的离子研磨步骤是去除种子层侧壁沉积物。 此后，将硬偏压层沉积在厚种子层的顶部。 或者，沉积硬偏置种子层的第一部分，随后进行离子研磨步骤以除去侧壁沉积物。 随后沉积种子层的薄的第二部分，然后沉积硬偏压层。
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83.发明授权Current perpendicular to plane (CPP) magnetoresistive sensor having a highly conductive lead structure 失效电流垂直于具有高导电性铅结构的平面（CPP）磁阻传感器公开(公告)号：US07436635B2
公开(公告)日：2008-10-14
申请号：US11320444
申请日：2005-12-27
IPC分类号： G11B5/39
CPC分类号： G11B5/127
摘要： A current perpendicular to plane (CPP) sensor having a sensor stack lead layer that is resistant to corrosion. The sensor includes a sensor stack having a capping layer at its top. A lead layer constructed of a non-corroding material such as Ru, Rh, Au or some similar material is formed over the capping layer. A magnetic shield material such a NiFe can then be deposited over the lead layer. The non-corroding lead material prevents the cap layer from corroding, preventing corrosion from causing parasitic resistance in the area in and around the lead and capping layers, thereby increasing sensor performance and reliability.
摘要翻译： 垂直于平面（CPP）传感器的电流具有耐腐蚀的传感器堆叠引线层。 传感器包括在其顶部具有覆盖层的传感器堆叠。 由覆盖层上形成由诸如Ru，Rh，Au或某些类似材料的非腐蚀性材料构成的引线层。 然后可以将诸如NiFe的磁屏蔽材料沉积在引线层上。 不腐蚀的铅材料防止盖层腐蚀，防止腐蚀在引线和封盖层内和周围的区域引起寄生电阻，从而提高传感器的性能和可靠性。
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84.发明授权公开(公告)号：US07428129B2
公开(公告)日：2008-09-23
申请号：US10881062
申请日：2004-06-30
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic head with improved hard magnet properties includes a read sensor; a multi-layered seed layer structure in end regions adjacent the read sensor; and a multi-layered seed layer structure formed upon crystalline materials of the read sensor in the end regions. The multi-layered seed layer structure includes a first seed layer made of chromium-molybdenum (Cr—Mo); a second seed layer made of nickel-tantalum (Ni—Ta); and a third seed layer made of chromium-molybdenum (Cr—Mo). The hard bias layer is preferably cobalt-platinum-chromium (Co—Pt—Cr).
摘要翻译： 具有改善的硬磁性能的磁头包括读取传感器; 与读取传感器相邻的端部区域中的多层种子层结构; 以及在端部区域中形成在读取传感器的结晶材料上的多层种子层结构。 多层种子层结构包括由铬 - 钼（Cr-Mo）制成的第一籽晶层; 由镍 - 钽（Ni-Ta）制成的第二籽晶层; 和由铬 - 钼（Cr-Mo）制成的第三籽晶层。 硬偏置层优选为钴 - 铂 - 铬（Co-Pt-Cr）。
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85.发明申请READ HEAD HAVING SHAPED READ SENSOR-BIASING LAYER JUNCTIONS USING PARTIAL MILLING 审中-公开阅读头部使用部分铣削读取传感器 - 偏移层结公开(公告)号：US20080158736A1
公开(公告)日：2008-07-03
申请号：US12044999
申请日：2008-03-09
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A read head and a magnetic hard disk drive having a read head layer stack which has been partially milled to within a partial milling range to form a shaped junction and a hard bias layer which is in contact with the shaped junction of the wafer stack.
摘要翻译： 具有读头单元堆叠的读头和磁盘驱动器，其已经被部分铣削到部分铣削范围内，以形成与晶片叠层的成形结接触的成形结和硬偏置层。
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公开(公告)号：US07259941B2
公开(公告)日：2007-08-21
申请号：US10975175
申请日：2004-10-27
IPC分类号： G11B5/39
CPC分类号： G11B5/3932
摘要： A magnetoresistive sensor having a hard bias structure having increased coercivity and squareness. The structure also allows the use of a thinner seed layer, which results in improved biasing by decreasing the spacing between the hard magnetic bias layer and the free layer of the sensor. The hard bias structure can be deposited over either a crystalline structure or over an amorphous material. The hard bias structure includes a hard bias material comprising CoPt deposited over a seed layer including a layer of NiTa and a layer of CrMo.
摘要翻译： 具有硬偏置结构的磁阻传感器具有增加的矫顽力和矩形度。 该结构还允许使用更薄的种子层，其通过减小硬磁偏置层和传感器的自由层之间的间距而导致改进的偏置。 硬偏置结构可以沉积在晶体结构上或非晶材料上。 硬偏压结构包括硬质偏置材料，其包含沉积在包含NiTa层和CrMo层的晶种层上的CoPt。
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公开(公告)号：US07155810B2
公开(公告)日：2007-01-02
申请号：US10676472
申请日：2003-09-30
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A GMR read head for a magnetic head, in which the hard bias layers are fabricated immediately next to the side edges of the free magnetic layer, and such that the midplane of the hard bias layer and the midplane of the free magnetic layer are approximately coplanar. The positioning of the hard bias layer is achieved by depositing a thick hard bias seed layer, followed by an ion milling step is to remove seed layer sidewall deposits. Thereafter, the hard bias layer is deposited on top of the thick seed layer. Alternatively, a first portion of the hard bias seed layer is deposited, followed by an ion milling step to remove sidewall deposits. A thin second portion of the seed layer is next deposited, and the hard bias layer is then deposited.
摘要翻译： 用于磁头的GMR读取头，其中硬偏置层紧紧地制造在自由磁性层的侧边缘附近，并且使得硬偏置层的中平面和自由磁性层的中平面近似共面 。 硬偏置层的定位是通过沉积厚的硬偏置种子层实现的，随后的离子研磨步骤是去除种子层侧壁沉积物。 此后，将硬偏压层沉积在厚种子层的顶部。 或者，沉积硬偏置种子层的第一部分，随后进行离子研磨步骤以除去侧壁沉积物。 随后沉积种子层的薄的第二部分，然后沉积硬偏压层。
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88.发明授权Electrical lead structures having crystalline structures that match underlying magnetic hard bias layers for magnetoresistive sensors 有权具有与用于磁阻传感器的潜在的磁性硬偏置层相匹配的晶体结构的电引线结构公开(公告)号：US07088562B2
公开(公告)日：2006-08-08
申请号：US10631338
申请日：2003-07-30
IPC分类号： G11B5/39
CPC分类号： G11B5/3903
摘要： A magnetic head including an electrical lead layer that is comprised of a material having an ordered crystalline structure. In a preferred embodiment, the ordered crystalline structure of the electrical lead is epitaxially matched to the crystalline structure of the hard bias layer upon which it is formed, and there is no need for a seed layer for the electrical leads. Electrical leads having an ordered crystalline structure, particularly a B2, L10, L11, L12 and D03 structure, will have significantly reduced resistivity over the prior art electrical leads that are typically composed of rhodium or tantalum. As a result, thinner electrical leads can be fabricated which carry the same, or even greater, current than the prior art rhodium or tantalum leads. The preferred leads are comprised of NiAl having a B2 crystalline structure, and alternative embodiments are comprised of CuAu, Cu3Au, Ni3Al and Fe3Al.
摘要翻译： 包括由具有有序晶体结构的材料构成的电引线层的磁头。 在优选实施例中，电引线的有序晶体结构外延地与其形成的硬偏置层的晶体结构匹配，并且不需要用于电引线的种子层。 具有有序晶体结构的电引线，特别是B2，L1，L1，L1，L2和D2。 与现有技术的通常由铑或钽组成的电引线相比，电阻率将显着降低。 结果，可以制造更薄的电引线，其携带与现有技术的铑或钽引线相同或甚至更大的电流。 优选的引线由具有B2晶体结构的NiAl组成，替代实施方案由CuAu，Cu 3 Au，Ni 3 Al和Fe 3+组成， SUB> Al。
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公开(公告)号：US07064935B2
公开(公告)日：2006-06-20
申请号：US10464253
申请日：2003-06-17
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , G11B5/3932
摘要： A lead overlay magnetoresistive sensor has leads with substantially vertical end walls to accentuate sense current near the ends of the leads. Insulating layers isolate the hard bias layers from the path of the sense current. A lead overlay magnetoresistive sensor does not exhibit significant trackwidth widening. A disk drive has a read element including a lead overlay magnetoresistive sensor with leads having substantially vertical end walls.
摘要翻译： 引线覆盖磁阻传感器具有基本上垂直的端壁的引线，以突出引线端部附近的感测电流。 绝缘层将硬偏压层与感测电流的路径隔离开来。 引线覆盖磁阻传感器不会显示明显的带宽加宽。 磁盘驱动器具有读取元件，其包括具有基本垂直端壁的引线的引线覆盖磁阻传感器。
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