公开(公告)号：US5705824A

公开(公告)日：1998-01-06

申请号：US497672

申请日：1995-06-30

申请人： Gerald J. Lafrate ,  Jun He ,  Mitra Dutta ,  Michael A. Stroscio

发明人： Gerald J. Lafrate ,  Jun He ,  Mitra Dutta ,  Michael A. Stroscio

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/775 ,  H01L29/88

CPC分类号： B82Y10/00 ,  H01L29/66977 ,  H01L29/739 ,  H01L29/775

摘要： A carrier transport media is doped with impurities or includes barrier structures within or on the carrier transport media and a sinusoidally alternating external electric field(s) with frequencies equal to the Bloch frequency divided by an integer is applied to the carrier transport media to alter the effective barriers of the impurities or barrier structures to an arbitrarily large potential compared to the zero field barrier potential. The various impurities or barrier structures are band engineered and deposited, grown or implanted in the carrier transport media and can take any form such as barrier layers in or on the transport media, laterally induced barriers, and impurities or defects in the carrier transport media. The application of time-dependent external fields across a length of nanoscale or mesoscopic structure leads to an effective renominalization of the barrier potential strengths when the frequency of the applied electric field multiplied by an integer is equal to the Bloch frequency. Under these conditions the transmission probability is altered and the current ratio, i.sub.2 /i.sub.1, will be modulated strongly.

摘要翻译： 载体传输介质掺杂有杂质或包括在载流子传输介质内或载体传输介质上的屏障结构，并且将频率等于Bloch频率除以整数的正弦交替外部电场施加到载体传输介质以改变载体传输介质 与零场势垒电位相比，杂质或势垒结构的有效屏障具有任意大的电位。 各种杂质或阻挡结构被带式工程化并沉积，生长或植入载体传输介质中，并且可以采取传输介质中或传输介质上的任何形式，例如阻挡层，侧向诱导的屏障，以及载体传输介质中的杂质或缺陷。 当施加的电场乘以整数的频率等于Bloch频率时，在纳米尺度或介观结构的长度上施加时间依赖的外部场的结果导致势垒势垒的有效归一化。 在这些条件下，传输概率被改变，并且电流比率i2 / i1将被强烈地调制。