公开(公告)号：US4309648A

公开(公告)日：1982-01-05

申请号：US950520

申请日：1978-10-11

申请人： Mitsuharu Morishita

发明人： Mitsuharu Morishita

IPC分类号： H02J7/24 ,  H02J7/16 ,  H02P9/30

CPC分类号： H02J7/166

摘要： An AC generator charges a storage battery through a full-wave rectifier. The battery energizes a field generator coil through an indication lamp and two Darlington-connected transistors in their conducting state due to a flow of base current through them via a base resistor connected to the battery until a voltage across the generator reaches a predetermined magnitude. At that time, a Zener diode conducts to turn the two transistors off. The field coil is also connected to an intermediate voltage rectifier output terminal to be energized with a voltage from that terminal even if the filament of the charge indicating lamp is broken.

摘要翻译： 交流发电机通过全波整流器对蓄电池充电。 电池通过指示灯和两个达林顿连接的晶体管在其导通状态下激励场发生器线圈，这是由于通过它们的基极电流流过连接到电池的基极电阻器，直到发生器两端的电压达到预定的大小。 那时候，齐纳二极管导通两个晶体管。 即使电荷指示灯的灯丝断裂，励磁线圈也连接到中压整流器输出端子，以从该端子的电压通电。

公开(公告)号：US4239558A

公开(公告)日：1980-12-16

申请号：US43873

申请日：1979-05-30

申请人： Mitsuharu Morishita ,  Shiroh Iwatani

发明人： Mitsuharu Morishita ,  Shiroh Iwatani

IPC分类号： H01L21/82 ,  H01L21/822 ,  H01L27/082 ,  H01L21/20 ,  H01L21/22

CPC分类号： H01L21/822 ,  H01L21/82 ,  H01L27/0825

摘要： A method of manufacturing a semiconductor device having at least one power transistor and a plurality of small signal transistors formed on the same semiconductor substrate is disclosed. First, a base region of the power transistor and an isolating region are formed by diffusion simultaneously in an epitaxial layer on the semiconductor substrate. Second, an emitter region of the power transistor and the collector regions of the small signal transistors are simultaneously formed by diffusion, and finally the bases, and emitters of the small signal transistors are formed in succession by diffusion.

摘要翻译： 公开了一种制造具有形成在同一半导体衬底上的至少一个功率晶体管和多个小信号晶体管的半导体器件的方法。 首先，通过在半导体衬底上的外延层中同时扩散形成功率晶体管的基极区域和隔离区域。 第二，通过扩散同时形成功率晶体管的发射极区域和小信号晶体管的集电极区域，最后通过扩散连续形成小信号晶体管的基极和发射极。