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    DISPLAY UNIT, DISPLAY MODULE, AND ELECTRONIC DEVICE
    81.
    发明申请
    DISPLAY UNIT, DISPLAY MODULE, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20210005669A1

    公开(公告)日：2021-01-07

    申请号：US16914530

    申请日：2020-06-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Taisuke KAMADA ,  Ryo HATSUMI ,  Daisuke KUBOTA ,  Naoaki HASHIMOTO ,  Tsunenori SUZUKI ,  Harue OSAKA ,  Satoshi SEO

    IPC: H01L27/28 ,  H01L27/30 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52

    Abstract: An object is to provide a highly reliable display unit having a function of sensing light. The display unit includes a light-receiving device and a light-emitting device. The light-receiving device includes an active layer between a pair of electrodes. The light-emitting device includes a hole-injection layer, a light-emitting layer, and an electron-transport layer between a pair of electrodes. The light-receiving device and the light-emitting device share one of the electrodes, and may further share another common layer between the pair of electrodes. The hole-injection layer is in contact with an anode and contains a first compound and a second compound. The electron-transport property of the electron-transport layer is low; hence, the light-emitting layer is less likely to have excess electrons. Here, the first compound is the material having a property of accepting electrons from the second compound.

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
    82.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE 审中-公开

    公开(公告)号：US20200185634A1

    公开(公告)日：2020-06-11

    申请号：US16791231

    申请日：2020-02-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Naoaki HASHIMOTO ,  Tsunenori SUZUKI ,  Satoshi SEO ,  Hiromi SEO ,  Hiromitsu KIDO

    IPC: H01L51/50 ,  H01L27/32

    Abstract: A light-emitting element that includes a fluorescent material and has a high emission efficiency is provided. A light-emitting element in which a delayed fluorescence component due to TTA accounts for a high proportion of emissive components is provided. A novel light-emitting device with a high emission efficiency and a low power consumption is provided. A light-emitting element includes an anode, a cathode, and an EL layer. The EL layer includes a light-emitting layer including a host material and an electron-transport layer including a first material in contact with the light-emitting layer. The LUMO level of the first material is lower than that of the host material. The proportion of a delayed fluorescence component due to TTA is greater than or equal to 10 percent of the light emission from the EL layer. The proportion of the delayed fluorescence component due to TTA may be greater than or equal to 15 percent of the light emission.

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
    84.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE 审中-公开

    公开(公告)号：US20180277783A1

    公开(公告)日：2018-09-27

    申请号：US15985748

    申请日：2018-05-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Naoaki HASHIMOTO ,  Tsunenori SUZUKI ,  Satoshi SEO ,  Hiromi SEO ,  Hiromitsu KIDO

    IPC: H01L51/50 ,  H01L51/00

    Abstract: A light-emitting element that includes a fluorescent material and has a high emission efficiency is provided. A light-emitting element in which a delayed fluorescence component due to TTA accounts for a high proportion of emissive components is provided. A novel light-emitting device with a high emission efficiency and a low power consumption is provided. A light-emitting element includes an anode, a cathode, and an EL layer. The EL layer includes a light-emitting layer including a host material and an electron-transport layer including a first material in contact with the light-emitting layer. The LUMO level of the first material is lower than that of the host material. The proportion of a delayed fluorescence component due to TTA is greater than or equal to 10 percent of the light emission from the EL layer. The proportion of the delayed fluorescence component due to TTA may be greater than or equal to 15 percent of the light emission.

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