公开(公告)号：US20130221345A1

公开(公告)日：2013-08-29

申请号：US13775408

申请日：2013-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinji Ohno ,  Hirokazu Watanabe ,  Naoto Kusumoto

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/425 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A transistor excellent in electrical characteristics and a method for manufacturing the transistor are provided. The transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel formation region over an insulating surface; a gate insulating film over the oxide semiconductor layer; a gate electrode overlapping with the channel formation region, over the gate insulating film; a source electrode in contact with the source region; and a drain electrode in contact with the drain region. The source region and the drain region include a portion having higher oxygen concentration than the channel formation region.

Abstract translation: 提供一种电特性优良的晶体管及其制造方法。 晶体管包括在绝缘表面上包括源极区，漏极区和沟道形成区的氧化物半导体层; 氧化物半导体层上的栅极绝缘膜; 与沟道形成区重叠的栅电极，在栅极绝缘膜上方; 源极与源极区域接触; 以及与漏极区域接触的漏电极。 源极区域和漏极区域包括具有比沟道形成区域更高的氧浓度的部分。