公开(公告)号：US09006735B2

公开(公告)日：2015-04-14

申请号：US14227231

申请日：2014-03-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Shinji Ohno ,  Yuichi Sato ,  Junichi Koezuka ,  Sachiaki Tezuka

IPC: H01L21/336 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

Abstract translation: 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

公开(公告)号：US09379223B2

公开(公告)日：2016-06-28

申请号：US14570527

申请日：2014-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L29/78618 ,  G02F1/136204 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/265 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

公开(公告)号：US10833202B2

公开(公告)日：2020-11-10

申请号：US15827426

申请日：2017-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Shunpei Yamazaki

IPC: H01L29/36 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/49

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

公开(公告)号：US10109743B2

公开(公告)日：2018-10-23

申请号：US15177447

申请日：2016-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/265 ,  H01L29/66 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/105 ,  H01L27/12 ,  H01L29/24

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

公开(公告)号：US20130221345A1

公开(公告)日：2013-08-29

申请号：US13775408

申请日：2013-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinji Ohno ,  Hirokazu Watanabe ,  Naoto Kusumoto

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/425 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A transistor excellent in electrical characteristics and a method for manufacturing the transistor are provided. The transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel formation region over an insulating surface; a gate insulating film over the oxide semiconductor layer; a gate electrode overlapping with the channel formation region, over the gate insulating film; a source electrode in contact with the source region; and a drain electrode in contact with the drain region. The source region and the drain region include a portion having higher oxygen concentration than the channel formation region.

Abstract translation: 提供一种电特性优良的晶体管及其制造方法。 晶体管包括在绝缘表面上包括源极区，漏极区和沟道形成区的氧化物半导体层; 氧化物半导体层上的栅极绝缘膜; 与沟道形成区重叠的栅电极，在栅极绝缘膜上方; 源极与源极区域接触; 以及与漏极区域接触的漏电极。 源极区域和漏极区域包括具有比沟道形成区域更高的氧浓度的部分。

公开(公告)号：US09837545B2

公开(公告)日：2017-12-05

申请号：US15044428

申请日：2016-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

公开(公告)号：US09450104B2

公开(公告)日：2016-09-20

申请号：US14920244

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Masahiro Takahashi ,  Hideyuki Kishida

IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract translation: 半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极， 栅极绝缘膜。 第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。 所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。

公开(公告)号：US09035304B2

公开(公告)日：2015-05-19

申请号：US14451683

申请日：2014-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Sachiaki Tezuka ,  Tomokazu Yokoi ,  Yusuke Shino

IPC: H01L29/12 ,  H01L29/24 ,  H01L29/786 ,  H01L21/84 ,  H01L27/108 ,  H01L27/115 ,  H01L27/12 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66

CPC classification number: H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

Abstract translation: 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

公开(公告)号：US20130221347A1

公开(公告)日：2013-08-29

申请号：US13777119

申请日：2013-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Atsuo Isobe ,  Sachiaki Tezuka ,  Shinji Ohno

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603

Abstract: An oxide semiconductor layer is formed, a gate insulating layer is formed over the oxide semiconductor layer, a gate electrode layer is formed to overlap with the oxide semiconductor layer with the gate insulating layer interposed therebetween, a first insulating layer is formed to cover the gate insulating layer and the gate electrode layer, an impurity element is introduced through the insulating layer to form a pair of impurity regions in the oxide semiconductor layer, a second insulating layer is formed over the first insulating layer, the first insulating layer and the second insulating layer are anisotropically etched to form a sidewall insulating layer in contact with a side surface of the gate electrode layer, and a source electrode layer and a drain electrode layer in contact with the pair of impurity regions are formed.

Abstract translation: 形成氧化物半导体层，在氧化物半导体层上形成栅极绝缘层，形成栅极层与氧化物半导体层重叠，栅极绝缘层插入其间，形成第一绝缘层以覆盖栅极 绝缘层和栅电极层，通过绝缘层引入杂质元素，以在氧化物半导体层中形成一对杂质区，在第一绝缘层，第一绝缘层和第二绝缘层上形成第二绝缘层 各层各向异性地蚀刻以形成与栅电极层的侧表面接触的侧壁绝缘层，并且形成与一对杂质区接触的源电极层和漏电极层。

公开(公告)号：US10008587B2

公开(公告)日：2018-06-26

申请号：US14459597

申请日：2014-08-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshihiko Saito ,  Takehisa Hatano ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC: H01L21/336 ,  H01L21/311 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/31

CPC classification number: H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.