公开(公告)号：US09328444B2

公开(公告)日：2016-05-03

申请号：US14465892

申请日：2014-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun Lee ,  Sung Mo Lee ,  Jung Won Choi

IPC: H02K29/08 ,  D06F33/02 ,  H02P6/08 ,  D06F37/40 ,  H02P29/02 ,  D06F17/08

CPC classification number: D06F33/02 ,  D06F17/08 ,  D06F37/40 ,  D06F2202/065 ,  D06F2204/065 ,  H02P6/08 ,  H02P6/17 ,  H02P21/22 ,  H02P29/024 ,  H02P29/0241

Abstract: A washing machine and a control method thereof capable of determining whether a driving motor is locked. A pulsator is rotatably mounted in a spin basket, a driving motor generates rotational force, a clutch transmits the rotational force to the pulsator or the spin basket, a driving circuit supplies a driving current to the driving motor, and a control unit controls the driving circuit and the clutch so that the pulsator rotates in a forward or reverse direction and rotation of the spin basket is stopped in a washing or rinsing process. The control unit controls the driving circuit so that a motor lock detection current is supplied to the driving motor, and controls the clutch so that, if a rotating speed of the driving motor is less than a reference speed, the rotational force is transmitted only to the pulsator.

Abstract translation: 一种能够确定驱动电机是否被锁定的洗衣机及其控制方法。 波轮可旋转地安装在旋转筐中，驱动电机产生旋转力，离合器将旋转力传递到脉动器或旋转筐，驱动电路向驱动电机提供驱动电流，控制单元控制驱动 电路和离合器，使得波轮在正向或反向方向上旋转，并且旋转筒的旋转在洗涤或漂洗过程中停止。 控制单元控制驱动电路，使得马达锁定检测电流被提供给驱动马达，并且控制离合器使得如果驱动马达的转速小于参考速度，则旋转力仅传递到 脉动器。

公开(公告)号：US09299563B2

公开(公告)日：2016-03-29

申请号：US14313928

申请日：2014-06-24

Applicant: IMEC VZW ,  Samsung Electronics Co. Ltd.

Inventor： Seung Hun Lee ,  Liesbeth Witters ,  Roger Loo

IPC: H01L21/02 ,  H01L21/762 ,  H01L29/10 ,  H01L21/3065

CPC classification number: H01L21/02658 ,  H01L21/02587 ,  H01L21/3065 ,  H01L21/76224 ,  H01L29/1054

Abstract: The present disclosure relates to a method for forming a strained semiconductor structure. The method comprises providing a strain relaxed buffer layer, forming a sacrificial layer on the strain relaxed buffer layer, forming a shallow trench isolation structure through the sacrificial layer, removing at least a portion of an oxide layer on the sacrificial layer, etching through the sacrificial layer such that a portion of the strain relaxed buffer layer is exposed, forming the strained semiconductor structure on the exposed portion of the strain relaxed buffer layer.

Abstract translation: 本发明涉及形成应变半导体结构的方法。 该方法包括提供应变松弛缓冲层，在应变松弛缓冲层上形成牺牲层，通过牺牲层形成浅沟槽隔离结构，去除牺牲层上的氧化物层的至少一部分，蚀刻通过牺牲层 使得应变松弛缓冲层的一部分被暴露，在应变松弛缓冲层的暴露部分上形成应变半导体结构。

公开(公告)号：US20160027876A1

公开(公告)日：2016-01-28

申请号：US14709696

申请日：2015-05-12

Applicant: IMEC VZW ,  SAMSUNG ELECTRONICS CO. LTD.

Inventor： Seung Hun Lee ,  Geert Eneman

IPC: H01L29/10 ,  H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/1054 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/41783 ,  H01L29/7848 ,  H01L29/7849

Abstract: A CMOS semiconductor FinFET device and a method for manufacturing a CMOS semiconductor FinFET device are disclosed. The device may comprise an nFinFET and a pFinFET having a channel region comprising Ge on a common strain-relaxed buffer layer comprising SiGe. The concentration of Ge in the channel regions is higher than the concentration of Ge in the strain-relaxed buffer layer. The device further comprises a source/drain region for the nFinFET, the source/drain region comprising SiGe; and a source/drain region for the pFinFET, the second source/drain region comprising Ge.

Abstract translation: 公开了CMOS半导体FinFET器件和用于制造CMOS半导体FinFET器件的方法。 器件可以包括在包含SiGe的公共应变松弛缓冲层上具有包含Ge的沟道区的nFinFET和pFinFET。 通道区中Ge的浓度高于应变松弛缓冲层中Ge的浓度。 器件还包括用于nFinFET的源极/漏极区域，源极/漏极区域包括SiGe; 以及用于pFinFET的源极/漏极区域，第二源极/漏极区域包括Ge。